Abstract: A vapor deposition apparatus includes a vacuum chamber into which an active gas, an inert gas or a mixture of the active gas and the inert gas, a reactor for converting a gaseous raw material into a gaseous thin-film forming substance, and a nozzle attached to the reactor so as to blow out the gaseous thin-film forming substance toward a substrate supported by a counter electrode. The nozzle is so adapted as to bring about a pressure difference between an interior space of the reactor and the vacuum chamber, which pressure difference causes the blown-out gaseous thin-film forming substance to be formed a cluster. The vapor deposition apparatus makes it possible to deposit a thin-film on a substrate having poor thermal stability and to form highly dense thin-film.