Abstract: A conductive material is buried into a hole portion of a layer insulating film. A contact portion of the buried conductive material coming in contact with an upper wiring is formed in a convex or concave shape. Materials of the buried conductive material and the upper wiring are selected such that these materials are different from each other. When an upper face of an opening portion of the buried conductive material in a hole portion is formed in a conical shape and .alpha. is set to an angle formed between a surface of the insulating film and a conical slanting face of the upper face of the buried conductive material, a contact area between the buried conductive material and an upper wiring member is equal to 1/cos.alpha. times a contact area between the buried conductive material and the upper wiring member provided in a case in which the upper face of the buried conductive material is formed in the shape of a flat face.

Abstract: A light emitting diode chip includes a substrate carrying thereon a number of light emitting diodes aligned in a row to form an array for producing a number of optical beams parallel to each other in a first direction, and monitoring element provided monolithically on the substrate for detecting the power of the optical beams produced by the light emitting diodes, wherein the monitoring element includes: a reference light emitting diode having a structure identical to the light emitting diodes in the array for producing an optical beam in a second direction perpendicular to the first direction; and a photodiode having a structure identical to the light emitting diodes in the array and separated from the reference light emitting diode by an isolation groove for detecting the optical beam produced by the reference light emitting diode.

Abstract: A polycrystal silicon electrode and a side wall are formed in a method for manufacturing a semiconductor device. Thereafter, air is exhausted from a film forming chamber until a vacuum degree of 4.times.10.sup.-8 Torr. A mixing gas of N.sub.2 and argon (At) is introduced into this chamber with 60 sccm and a pressure within the chamber is set to 2.0 mTorr. A percentage of N.sub.2 to argon (Ar) in this mixing gas atmosphere is set to 10%. Direct current power 6 kW is applied to a titanium target having 99.998% in purity and 12 inches in length so that the titanium target is sputtered and formed as a titanium film including nitrogen. The titanium film is processed rapidly and thermally for 30 seconds at a temperature of 750 .degree. C. by using a xenon (Xe) arc lamp. Thus, a silicide film is uniformly formed selectively on a silicon substrate and the polycrystal silicon electrode.

Abstract: In a semiconductor optical functional element of a loading resistor integrated type, at least one loading resistor is integrated with the optical functional element. The optical functional element has a structure in which a phototransistor and a light emitting diode are adjacent to each other and are integrated with each other, or a phototransistor and a laser diode are adjacent to each other and are integrated with each other. The optical functional element is characterized in that light is fed back from a light emitting portion of the optical functional element to a light receiving portion thereof and a semiconductor layer is formed as the loading resistor in an uppermost layer of the optical functional element. The loading resistor can be manufactured by using the same manufacturing process as the optical functional element.

Abstract: A micro metal-wiring construction comprises a substrate having a first insulating layer thereon, a metal wiring formed on the first insulating layer of the substrate, and a second insulating layer covering the metal wiring. The coefficient of thermal expansion of the metal wiring is greater than those of the first and the second insulating layers. Intersection lines formed between grain boundaries of the metal wiring and a surface of the first insulating layer is nearly perpendicular to an extending direction of the metal wiring and an angle between grain boundary planes and a line that is perpendicular to a surface of the first insulating layer is greater than 20 degrees. Metal-wiring having a good resistance against stress-induced-migration is obtained by providing when this angle is greater than 20.degree..

Abstract: A pen input device is provided with a tablet having a top surface and a plurality of reference lines provided at a constant pitch on the top surface in mutually perpendicular directions, and a pointing device having a tip end, a first device for irradiating light on the tablet via the tip end, and a second device for detecting a moving direction and a moving quantity of the tip end of the pointing device on the tablet and a distance between the tip end of the pointing device and the top surface of the tablet based on scattered light received from the tablet.

Abstract: A semiconductor light emitting element has a semiconductor laminating structure formed on a semiconductor substrate and having a junction portion formed in parallel with a semiconductor substrate face; a light generating portion formed in the vicinity of the junction portion such that an electric current can be injected into the light generating portion; a light emitting end face approximately perpendicular to the junction portion and approximately having an arc or hyperbolic shape in a direction parallel to the semiconductor substrate face; and an electrode for electric current injection formed in an upper portion of the semiconductor laminating structure and arranged in a position separated from at least a center of curvature of the arc light emitting end face. The semiconductor light emitting element has a shape of the light emitting portion and a layer structure capable of controlling a radiant angle of light.

Abstract: A photoelectric transfer device includes at least one photoelectric transfer cell having the following elements: A photoelectric transfer element generates a photoelectric current based on a quantity of incident light. An amplifier element includes first FET and functions as a source follower in which a source voltage of the first FET is varied so as to follow up a gate voltage thereof. A read unit outputs, as an output signal, the source voltage of the source follower. The photoelectric transfer element is connected to a gate and source of the amplifier element so that a voltage between the gate and source of the amplifier element is applied across the photoelectric transfer element.

Abstract: A functional thin film member is composed of an insulating substrate; a first single crystal thin film layer which contains at least one atom component of Si or Ge, formed on the insulating substrate; an intermediate layer with a cubic crystal system and a lattice constant difference of 15% or less with respect to the lattice constant of the single crystal thin film layer, formed on said single crystal thin film layer; and a second single crystal thin film layer of an oxide formed on the intermediate layer. The first single crystal thin film layer may include crystal orientations suitable for the properties of functional members to be provided above the single crystal thin film layer on an identical plane of the surface of the single crystal thin film layer, and the intermediate layer may be formed in at least one portion of the single crystal thin film layer, corresponding to any of the crystal orientations.

Abstract: An electron-beam heating apparatus in which an electron-beam of a stable intensity can be obtained. The apparatus is provided with a heating unit having two electrodes comprising a cathode and an anode. A heating of a material is performed by using an electron-beam generated by glow discharge generated in a space between the two electrodes. The apparatus is provided with an electric power source and a current control unit. The electric power source supplies an electric current to the electrodes so as to generate the glow discharge in a space between the two electrodes. The current control unit controls the current flowing to the cathode so as to be constant to obtain a constant glow discharge formed in a space between the two electrodes. A constant electron-beam is obtained by the glow discharge.

Abstract: A semiconductor light emitting device able to emit a high intensity, stable light. An edge surface lighting type light emitting diode array is formed on a substrate. A light emitting edge surface of each light emitting element is formed by an etching method. A surface of the substrate in front of the light emitting edge surface is formed in multiple stage so that a light beam is not reflected by the surface of the substrate.

Abstract: A light emitting diode array has light emitting dots arranged in a line and is characterized in that a semiconductor substrate of a chip constituting the light emitting diode array has a Dovetail grooved mesa shape on a chip end face opposed to an adjacent chip and arranged in a direction perpendicular to an arranging direction of light emitting diodes. A light emitting portion can be protected from chipping even when a length from the light emitting portion of the light emitting diode array to a chip end portion is shorter than the size of a chipping portion.

Abstract: A method for manufacturing a C-MOS thin film transistor device has the steps of implanting the n-type impurity only in the upper layer portion of the source-drain section of the n-channel transistor by controlling implantation energy of the n-type impurity; implanting the p-type impurity in the source-drain section and the gate electrode of the p-channel transistor, and the source-drain section and the gate electrode of the n-channel transistor by controlling implantation energy of the p-type impurity; and activating the implanted n-type and p-type impurities in the source-drain section of the n-channel transistor, and activating the implanted p-type impurity in the source-drain section and the gate electrode of the p-channel transistor and gate electrode of the n-channel transistor. The n-type and the p-type may be respectively changed to the p-type and the n-type in the above construction.

Abstract: A planar semiconductor optical device for modulating an optical beam includes an active layer provided on a substrate, the active layer having a quantum structure and being laterally surrounded by an optical confinement region which has a refractive index smaller than the effective refractive index of the active layer.

Abstract: An image sensor includes a substrate made of an insulating and transparent material, a plurality of photoelectric conversion elements which are provided on the substrate and arranged in a predetermined direction of the substrate, a driving circuit, which is provided on the substrate and extends parallel to the photoelectric conversion elements, for driving the photoelectric conversion elements, and a conductive film adjacent to at least one of the photoelectric conversion elements and the driving circuit, for receiving an external noise signal.

Abstract: A semiconductor light emitting device able to emit a high intensity, stable light. An edge surface lighting type light emitting diode array is formed on a substrate. A light emitting edge surface of each light emitting element is formed by an etching method. A surface of the substrate in front of the light emitting edge surface is formed in multiple stage so that a light beam is not reflected by the surface of the substrate.

Abstract: A photoconductive material comprises a photocarrier generating zone using a wide-band gap material and a photocarrier moving zone using an amorphous silicon material. A photocarrier generating zone including a silicon atom as a principal atom comprises an amorphous silicon which contains at least one kind of atom selected from a group including oxygen, nitrogen and carbon and also contains an atom which terminates a dangling bond of a silicon. This photoconductive material can be used for various devices because of its wide-band gap and high photosensitivity.

Abstract: An analog signal having a value A is converted into an n-bit digital signal. An optical calculation part performs a part of a calculation shown below for an A/D conversion as below.U.sub.i =[{{.SIGMA.(W.sub.ij .times.X.sub.j)+h.sub.i }.times.V}+A].times.Si . . . (1)The calculation of the equation (1) is performed fori=0, 1, . . . , n-1 respectively;the W.sub.ij is 0 if i.gtoreq.j.gtoreq.0, or -(2**j) if j>i.gtoreq.0; hi is -(2**i), or -{(2**i)-.epsilon.}(.vertline..epsilon..vertline..ltoreq.1);V and S.sub.i respectively have any desired positive values and the said .SIGMA. represents a summation of each expression following thereto for j=0, 1, . . . , n-1. The thresholding compares the result U.sub.i of the calculation of each equation (1) to a threshold value, and then 1 or 0 is selected. The result of the selection is then assigned to X.sub.i. The calculation of the equation (1) is then performed repeatedly until X.sub.i converge on solutions. The solution of each X.sub.

Abstract: An optical EXCLUSIVE-OR element in which the number of basic elements is reduced which results in increased integration of the element. The optical EXCLUSIVE-OR element comprises a substrate, a first optical functional element and a second optical functional element having the same structure as that of the first optical functional element. Each of the first and second optical functional elements has a light receiving portion and a light emitting portion. The light emitting portion is formed on the light receiving portion. The light emitting portion comprises semiconductor materials having an energy gap wider than the dominant peak energy of the input light, and the light receiving portion comprises semiconductor materials having an energy gap equal to or narrower than the dominant peak energy of the input light. A first electrode is formed over the first and second optical functional elements, and has windows which allow the input light and output light to pass through.

Abstract: An optically functional device has a semiconductor substrate, a light receiving portion disposed on the semiconductor substrate for receiving input light, a light emitting portion disposed on the light receiving portion for emitting output light, a window disposed above the light emitting portion, through which input light and output light pass and a resistance layer made of a semiconductor for functioning as load resistance. The resistance layer is disposed at least in either place between the semiconductor substrate and the light receiving portion, or between the light receiving portion and the light emitting portion, or on the light emitting portion. The light emitting portion has a light emitting layer made of semiconductor material having an energy of forbidden band width of more than the energy of a main peak of input light.