Abstract: The present invention discloses a graphene platelet fabrication method, which comprises Step (A): providing a highly-graphitized graphene having a graphitization degree of 0.8-1.0; and Step (B): providing a shear force acting on the highly-graphitized graphene to separate the highly-graphitized graphene into graphene platelets, wherein the graphene platelets have a length of 10-500 ?m and a width of 10-500 ?m and have a single-layer or multi-layer structure. The present invention also discloses a graphene platelet fabricated according to the abovementioned method.

Abstract: A heat conducting composite material includes a matrix and a graphene sheet. The graphene sheet has a two-dimensional planar structure, and a basal plane of the graphene sheet has a lateral size between 0.1 nm and 100 nm such that the graphene sheet has a quantum well structure. When radiation energy passes through the heat conducting composite material, the radiation energy is converted into infrared light by the quantum well structure of the graphene sheet to achieve high radiating efficiency. A light-emitting diode (LED) having the heat conducting composite material and capable of achieving a heat dissipation effect is further disclosed.

Abstract: Superabrasive tools and methods for making and using the same are provided. In one aspect, for example, a CMP pad dresser includes a first monolayer of superabrasive particles disposed on and coupled to one side of a metal support layer and a second monolayer of superabrasive particles disposed on and coupled to the metal support layer on an opposite side from the first monolayer. The superabrasive particles of the second monolayer are positioned to have substantially the same distribution as the superabrasive particles of the first monolayer.

Abstract: Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm/° C.

Abstract: LED devices incorporating diamond materials and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.

Abstract: Devices having light transmittant protective layers and methods associated with such layers are provided. In one aspect, for example, a device having a light transmittant protective layer can include a substrate having a transmittance of greater than or equal to about 85 for light having at least one wavelength from about 250 nm to about 800 nm, and a light transmittant protective layer coated on the substrate. The protective layer includes at least 50 wt % AlN and having a transmittance of greater than or equal to 80% for light having at least one wavelength from about 250 nm to about 800 nm.

Abstract: A heat conducting composite material includes a matrix and a graphene sheet. The graphene sheet has a two-dimensional planar structure, and a basal plane of the graphene sheet has a lateral size between 0.1 nm and 100 nm such that the graphene sheet has a quantum well structure. When radiation energy passes through the heat conducting composite material, the radiation energy is converted into infrared light by the quantum well structure of the graphene sheet to achieve high radiating efficiency. A light-emitting diode (LED) having the heat conducting composite material and capable of achieving a heat dissipation effect is further disclosed.

Abstract: The present invention discloses a graphene platelet fabrication method, which comprises Step (A): providing a highly-graphitized graphene having a graphitization degree of 0.8-1.0; and Step (B): providing a shear force acting on the highly-graphitized graphene to separate the highly-graphitized graphene into graphene platelets, wherein the graphene platelets have a length of 10-500 ?m and a width of 10-500 ?m and have a single-layer or multi-layer structure. The present invention also discloses a graphene platelet fabricated according to the abovementioned method.

Abstract: Electrode devices and systems for use in liquid environments, including associated methods are provided. In one aspect, for example, an electrode device for use in a liquid environment can include a proton exchange membrane having a first side and a second side, a first electrode including a carbon material, where the first electrode is positioned at the first side of the proton exchange membrane, and a second electrode including a carbon material, where the second electrode positioned at the second side of the proton exchange membrane opposite the first electrode. The proton exchange membrane spaces the first electrode and the second electrode at a distance of less than or equal to about 100 microns apart.

Abstract: Thermally regulated semiconductor devices having reduced thermally induced defects are provided, including associated methods. Such a device can include a heat spreader having a monolayer of diamond particles within a thin metal matrix and a semiconductor material thermally coupled to the heat spreader. In one aspect, the coefficient of thermal expansion difference between the heat spreader and the semiconductor material is less than or equal to about 50%.

Abstract: A thermal conduction device and a method for fabricating the same are disclosed. Firstly, arrange a plurality of diamond particles on a plane according to a. predetermined pattern to form a diamond particle monolayer. Next, apply a forming process on a metal material such that the metal material forms a metal matrix wrapping the diamond particles to form a composite body including the diamond particle monolayer embedded in the metal matrix. Next, stack a plurality of the composite bodies and perform a heating process to join the metal matrixes to each other to form the thermal. conduction device. The device is characterized in arranging diamond particles on a plane to form a two-dimensional monolayer structure and manufactured via assembling the two-dimensional monolayer structures to form a three-dimensional multilayer structure. By controlling the arrangement of the diamond particles, the thermal conduction device can have superior thermal conduction performance.

Abstract: A thermal conduction device and a method for fabricating the same are disclosed. Firstly, arrange a plurality of diamond particles on a plane according to a predetermined pattern to form a diamond particle monolayer. Next, apply a forming process on a metal material such that the metal material forms a metal matrix wrapping the diamond particles to form a composite body including the diamond particle monolayer embedded in the metal matrix. Next, stack a plurality of the composite bodies and perform a heating process to join the metal matrixes to each other to form the thermal conduction device. The device is characterized in arranging diamond particles on a plane to form a two-dimensional monolayer structure and manufactured via assembling the two-dimensional monolayer structures to form a three-dimensional multilayer structure. By controlling the arrangement of the diamond particles, the thermal conduction device can have superior thermal conduction performance.

Abstract: Methods and devices for cooling electronic circuits having at least one heat source are disclosed and described. One such thermally dynamic electronic device may include a layer of diamond material coated on a support substrate, and circuitry disposed on the layer of diamond material, the diamond material being configured to accelerate movement of heat away from the circuitry. Although the diamond material may be any known diamond material that functions to accelerate heat transfer, in one aspect the diamond material may be diamond-like carbon. In one specific aspect, the diamond-like carbon may be amorphous carbon. In another aspect, the diamond material may be crystalline diamond.

Abstract: Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm/° C.

Abstract: Materials, devices, and methods for enhancing performance of electronic devices such as solar cells, fuels cells, LEDs, thermoelectric conversion devices, and other electronic devices are disclosed and described. A diamond-like carbon electronic device can include a conductive diamond-like carbon cathode having specified carbon, hydrogen and sp2 bonded carbon contents. In some cases, the sp2 bonded carbon content may be sufficient to provide the conductive diamond-like carbon material with a visible light transmissivity of greater than about 0.70. A charge carrier separation layer can be coupled adjacent and between the diamond-like carbon cathode and an anode. The conductive diamond-like carbon material of the present invention can be useful for any other application which can benefit from the use of conductive and transparent electrodes which are also chemically inert, radiation damage resistance, and are simple to manufacture.

Abstract: A heat spreader is presented which can provide effective thermal management in a cost effective manner. The heat spreader includes a plurality of diamond particles arranged in a single layer surrounded by a metallic mass. The metallic mass cements the diamond particles together. The layer of diamond particles is a single particle thick. Besides the single layer of diamond particles, the metallic mass has substantially no other diamond particles therein. A thermal management system including a heat source and a heat spreader is also presented, along with methods for making and methods for use of such heat spreaders.

Abstract: The present invention provides semiconductor-on-diamond devices, and methods for the formation thereof. In one aspect, a mold is provided which has an interface surface configured to inversely match a configuration intended for the device surface of a diamond layer. An adynamic diamond layer is then deposited upon the diamond interface surface of the mold, and a substrate is joined to the growth surface of the adynamic diamond layer. At least a portion of the mold can then be removed to expose the device surface of the diamond which has received a shape which inversely corresponds to the configuration of the mold's diamond interface surface. The mold can be formed of a suitable semiconductor material which is thinned to produce a final device. Optionally, a semiconductor material can be coupled to the diamond layer subsequent to removal of the mold.