Abstract: A fracturing apparatus is provided. The fracturing apparatus includes a first board portion, a pressing element, a first suction device, a second board portion, a second suction device, and a cylinder. The first suction device is secured to the first board portion. The second board portion is rotatably connected to the first board portion. The second suction device is secured to the second board portion. The pressing element is secured to the first board portion and disposed between the first board portion and the second board portion. The cylinder is located on the first board portion and includes a piston rod rotatably connected to the second board portion. When the piston rod extends, the second board portion is pressed by the piston rod and swiveled about the first board portion.

Abstract: A power supply system for supplying a power to a device is disclosed. The power supply system includes a solar cell and a regulator coupled with the solar cell. The solar cell receives and converts sunlight into an output voltage. The regulator converts the output voltage into a desired voltage level to be supplied to the device. The regulator is a DC-DC converter.

Abstract: A fracturing apparatus is provided. The fracturing apparatus includes a first board portion, a pressing element, a first suction device, a second board portion, a second suction device, and a cylinder. The first suction device is secured to the first board portion. The second board portion is rotatably connected to the first board portion. The second suction device is secured to the second board portion. The pressing element is secured to the first board portion and disposed between the first board portion and the second board portion. The cylinder is located on the first board portion and includes a piston rod rotatably connected to the second board portion. When the piston rod extends, the second board portion is pressed by the piston rod and swiveled about the first board portion.

Abstract: Disclosed herein is an optical disc having an information area situated between an internal edge and an external edge of the optical disc. The optical disc includes a first substrate, a second substrate, a recording layer, a reflecting layer and a number of surface structures. The second substrate is disposed over the second substrate, the recording layer and the reflecting layer are disposed between the two substrates, and the reflecting layer is disposed between the first substrate and the recording layer. The surface structures are discontinuously disposed on the surface of the second substrate.

Abstract: Disclosed herein is an optical disc having an information area situated between an internal edge and an external edge of the optical disc. The optical disc includes a first substrate, a second substrate, a recording layer, a reflecting layer and a number of surface structures. The second substrate is disposed over the second substrate, the recording layer and the reflecting layer are disposed between the two substrates, and the reflecting layer is disposed between the first substrate and the recording layer. The surface structures are discontinuously disposed on the surface of the second substrate.

Abstract: Disclosed herein is a recording material for an optical recording medium. The recording material has a composition represented by a general formula of BixGeyO(1-x-y), in which x and y respectively are atomic ratios of bismuth and germanium, and satisfy the requirements of the following formulae: 2.8?(x/y)?25 and 0.55?(1?x?y)?0.62.

Abstract: Disclosed herein is a recording material for an optical recording medium. The recording material has a composition represented by a general formula of BixGeyO(1-x-y), in which x and y respectively are atomic ratios of bismuth and germanium, and satisfy the requirements of the following formulae: 2.8?(x/y)?25 and 0.55?(1?x?y)?0.62.

Abstract: Disclosed herein is a method for manufacturing a master plate of an optical disc. The method comprises the step of: (a) forming an inorganic resist layer on a substrate; (b) forming an organic photoresist layer on and in contact with the inorganic resist layer; (c) irradiating both the organic photoresist layer and the inorganic resist layer with a laser beam to form a first exposed region of the inorganic resist layer and a second exposed region of the organic photoresist layer; (d) removing the inorganic resist layer of the first exposed region and the organic photoresist layer of the second exposed region; (e) removing the patterned organic photoresist layer from the patterned inorganic resist layer; (f) conformally forming a release layer to cover the patterned inorganic resist layer; (g) plating a metal layer on the release layer; and (h) separating the metal layer and the release layer.

Abstract: Disclosed herein is a nano-fabrication method, which includes the step of: (a) forming an inorganic resist layer on a substrate; (b) forming an organic photoresist layer on the inorganic resist layer; (c) irradiating both the organic photoresist layer and the inorganic resist layer with a laser beam to form a first exposed region of the inorganic resist layer and a second exposed region of the organic photoresist layer; (d) removing the inorganic resist layer of the first exposed region and the organic photoresist layer of the second exposed region to form a patterned inorganic resist layer and a patterned organic photoresist layer; and (e) removing the patterned organic photoresist layer from the patterned inorganic resist layer.

Abstract: A phase change memory device and a method of forming the same are provided. The phase change memory device includes a conducting electrode in a dielectric layer, a bottom electrode over the conducting electrode, a phase change layer over the bottom electrode, and a top electrode over the phase change layer. The phase change memory device may further include a heat sink layer between the phase change layer and the top electrode. The resistivities of the bottom electrode and the top electrode are preferably greater than the resistivity of the phase change material in the crystalline state.

Abstract: A piezoelectric device is disclosed. The piezoelectric device includes a first magnetic layer, a second magnetic layer and a piezoelectric layer. The piezoelectric layer is disposed between the first magnetic layer and the second magnetic layer. Both the first magnetic layer and the second magnetic layer are electrically conductive layers and are capable of generating magnetic fields.

Abstract: A capacitor is disclosed. The capacitor includes a conductive and non-magnetic layer, a magnetic and conductive layer, and a dielectric layer. The dielectric layer is disposed between the conductive and non-magnetic layer and the magnetic and conductive layer. The magnetic and conductive layer is capable of generating a magnetic field, and thus enhances the dielectric constant of the dielectric layer for at least 10 folds.

Abstract: A non-volatile memory device capable of supplying power is provided. The non-volatile memory device includes an electrical storage device for supplying a stored power, a charging control circuit coupled to the electrical storage device, a non-volatile memory, an input/output (I/O) interface, and a power control circuit. The I/O interface connects an electronic apparatus for transmitting an external power output from the electronic apparatus to the non-volatile memory and the charging control circuit, such that the charging control circuit could control a charging current and a charging voltage of the electrical storage device. The power control circuit converts the stored power into a backup power, and monitors whether a voltage value of the external power is less than a predetermined value. If the result is positive, the power control circuit controls the charging control circuit to stop charging the electrical storage device, and outputs the backup power through the I/O interface.

Abstract: A non-volatile memory device capable of supplying power is provided. The non-volatile memory device includes an electrical storage device for supplying a stored power, a charging control circuit coupled to the electrical storage device, a non-volatile memory, an input/output (I/O) interface, and a power control circuit. The I/O interface connects an electronic apparatus for transmitting an external power output from the electronic apparatus to the non-volatile memory and the charging control circuit, such that the charging control circuit could control a charging current and a charging voltage of the electrical storage device. The power control circuit converts the stored power into a backup power, and monitors whether a voltage value of the external power is less than a predetermined value. If the result is positive, the power control circuit controls the charging control circuit to stop charging the electrical storage device, and outputs the backup power through the I/O interface.

Abstract: The present disclosure relates to a storage device. The storage device comprises a frame having a hole and a printed circuit board embedded in the frame, wherein the printed circuit board has an extended part for forming a connector. The connector may pass through the hole and is exposed out the frame for interfacing the storage device with a host device. At least one memory device is mounted to the printed circuit board and electrically connected to the printed circuit board.

Abstract: An organic solar cell including a substrate, an organic solar cell device, at least one hydrophobic polymer layer and at least one metal layer is provided. The hydrophobic polymer layer and the metal layer are alternately stacked on the organic solar cell device. The hydrophobic polymer layer is used to prevent moisture from entering the organic solar cell device. The metal layer is used to prevent moisture and oxygen from entering the organic solar cell device. A method for forming an organic solar cell is also disclosed in the specification.

Abstract: Chemical vapor deposition (CVD) is used to synthesize single-wall carbon nanotubes by a catalytic reaction, and a method of preparing the catalyst is also provided. A transition metal catalyzing growth of carbon nanotubes, an oxide of a precursor metal preventing agglomeration of catalyst particles, and a precious metal are essentially consisted in the catalyst. The catalyst particles can be further dispersed by quasi-explosive effect occurred when the oxidized precious metal is reduced.

Abstract: Chemical vapor deposition (CVD) is used to synthesize single-wall carbon nanotubes by a catalytic reaction, and a method of preparing the catalyst is also provided. A transition metal catalyzing growth of carbon nanotubes, an oxide of a precursor metal preventing agglomeration of catalyst particles, and a precious metal are essentially consisted in the catalyst. The catalyst particles can be further dispersed by quasi-explosive effect occurred when the oxidized precious metal is reduced.

Abstract: Chemical vapor deposition (CVD) is used to synthesize single-wall carbon nanotubes by a catalytic reaction, and a method of preparing the catalyst is also provided. A transition metal catalyzing growth of carbon nanotubes, an oxide of a precursor metal preventing agglomeration of catalyst particles, and a precious metal are essentially consisted in the catalyst. The catalyst particles can be further dispersed by quasi-explosive effect occurred when the oxidized precious metal is reduced.

Abstract: An interface apparatus having a rotational mechanism for connecting with an interface port in an electronic product is provided. The interface apparatus comprises a body, a connector and a rotational mechanism. The connector is used for connecting with the interface port of an electronic device. The rotational mechanism links up the body with the connector. The rotational mechanism has one to five degrees of freedom of movements. One or a multiple of rotational junctions together provides the degrees of freedom of movements in the rotational mechanism.