Abstract: Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage layer comprising a blend of a ferro-electric material and a semiconductor material. Preferably both materials in the blend are polymers.
Type:
Application
Filed:
September 14, 2011
Publication date:
April 5, 2012
Applicant:
Rjiksuniversiteit Groningen
Inventors:
Paulus Wilhelmus Maria Blom, Bert De Boer, Kamal Asadi