Abstract: New Te-zwitterion compounds are provided, including photoactive tellurium salt compounds useful for Extreme Ultraviolet Lithography.

Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; R1 independently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; R2 represents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

Abstract: New Te-salts are provided, including photoactive tellurium salt compounds useful for Extreme Ultraviolet Lithography.

Abstract: Aqueous acid binary silver-bismuth alloy electroplating compositions and methods enable electroplating silver rich binary silver-bismuth deposits. The aqueous acid binary silver-bismuth alloy electroplating compositions include thiol terminal aliphatic compounds having carboxyl or sulfonic groups which enable deposition of silver rich binary silver-bismuth alloys having deposits which are matte to semi-bright, uniform and have a low coefficient of friction.

Abstract: A polymer composite comprising: (a) quantum dots; (b) polymerized units of a compound of formula (I) wherein R1 is hydrogen or methyl and R2 is a C6-C20 aliphatic polycyclic substituent; and (c) a light stabilizer compound comprising two 1-alkyloxy-2,2,6,6-tetramethyl-4-piperidinyl substituents.

Abstract: The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer, comprising one or more triaryl aminium radical cations having the structure (S1).

Abstract: Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising one or more condensed polymers having an organic polymer chain having pendently-bound moieties having an acidic proton and a pKa in water from ?5 to 13 and having pendently-bound siloxane moieties are provided.

Abstract: Disclosed herein is a method of forming vias in electrical laminates comprising laminating a sheet having a layer comprising a crosslinkable polymer composition to a substrate wherein the crosslinkable polymer composition has a viscosity at lamination temperatures in the range of 200 Pa-s to 100,000 Pa-s, forming at least one via in the crosslinkable polymer layer by laser ablation; and after the forming of the at least one via, thermally curing the crosslinkable polymer layer. According to certain embodiments the cross linkable polymer composition has a viscosity at lamination temperature of at least 5000 Pa-s. This method yields good lamination results, good via profiles, and good desmear results when such compositions are used and the via is laser ablated before cure.

Abstract: Compositions for forming polymer layers useful in the manufacture of display devices, particularly flexible display, and methods of forming such devices are provided.

Abstract: A press-fit terminal for insertion into a conductive through-hole of a substrate includes an elastic deformation part with an outer and inner surface, the press-fit terminal includes, in sequence, a copper or copper alloy base, nickel or a nickel alloy barrier layer, a tin or tin alloy layer and an indium top layer. The press-fit terminal shows reduced whisker formation.

Abstract: An antireflective coating composition, including a polymer, a photoacid generator having a crosslinkable group, a compound capable of crosslinking the polymer and the photoacid generator, a thermal acid generator, and an organic solvent.

Abstract: Polyarylene resins and compositions containing them are useful as underlayers in semiconductor manufacturing processes.

Abstract: Provided is an optoelectronic device comprising an optoelectronic element and circuitry connected to the optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching the optoelectronic element between a configuration in which the circuitry provides an effective forward bias voltage that causes the optoelectronic element to emit light and a configuration in which the circuitry provides an effective reverse bias voltage that causes the optoelectronic element to be capable of generating a photocurrent when light to which the optoelectronic element is sensitive strikes the optoelectronic element.

Abstract: Provided is a composition comprising a compound having structure (I) wherein each of A1, A2, A3, A4, A5, A6, A7, and A8 is independently CR12 or N; wherein one to four of A1, A2, A3, A4, A5, A6, A7, and A8 are N; wherein J1 is C or Si; wherein J2 is C(R13)n, O, (C(R13)n)2, S, NR13, or Se; wherein n is 1 or 2; wherein each of R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, and R13 is independently H, deuterium, or an organic group. Also provided is a method of making the composition, a method of making an organic light-emitting diode using the composition, and an organic light-emitting diode made by that method.

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: Display substrates having a hard coat layer on a colorless polyimide substrate are formed from hard coat compositions having certain organic solvents that do not substantially impact the optical and mechanical properties of the colorless polyimide substrate.

Abstract: A method of manufacturing a semiconductor device comprising: providing a semiconductor device substrate having a relief image on a surface of the substrate, the relief image having a plurality of gaps to be filled; applying a coating composition to the relief image to provide a coating layer, wherein the coating composition comprises (i) a polyarylene oligomer comprising as polymerized units one or more first monomers having two or more cyclopentadienone moieties and one or more second monomers having an aromatic moiety and two or more alkynyl moieties; wherein the polyarylene oligomer has a Mw of 1000 to 6000 Da, a PDI of 1 to 2, and a molar ratio of total first monomers to total second monomers of 1:>1; and (ii) one or more organic solvents; curing the coating layer to form a polyarylene film; patterning the polyarylene film; and transferring the pattern to the semiconductor device substrate.

Abstract: Disclosed herein is a method comprising disposing upon a substrate a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; an additive polymer; where the additive polymer comprises a reactive moiety that is operative to react with a substrate upon which it is disposed; and where the additive polymer comprises a homopolymer that is the chemically and structurally the same as one of the polymers in the block copolymer or where the additive polymer comprises a random copolymer that has a preferential interaction with one of the blocks of the block copolymers; and a solvent; and annealing the composition.

Abstract: A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract: Copper electroplating baths containing primary alcohol alkoxylate block copolymers and ethylene oxide/propylene oxide random copolymers having specific HLB ranges are suitable for filling vias with copper, where such copper deposits are substantially void-free and substantially free of surface defects.