Abstract: The present invention provides methods of CMP polishing a metal surface, such as a copper or tungsten containing metal surface in a semiconductor wafer, the methods comprising CMP polishing the substrate with a CMP polishing pad that has a top polishing surface in a polishing layer which is the reaction product of an isocyanate terminated urethane prepolymer and a curative component comprising a polyol curative having a number average molecular weight of 6000 to 15,000, and having an average of 5 to 7 hydroxyl groups per molecule and a polyfunctional aromatic amine curative, wherein the polishing layer would if unfilled have a water uptake of 4 to 8 wt. % after one week of soaking in deionized (DI) water at room temperature. The methods form coplanar metal and dielectric or oxide layer surfaces with low defectivity and a minimized degree of dishing.

Abstract: The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions that comprise a mixture of (a) one or more alkoxylated diamines having a number average molecular weight (Mn) of from 1,000 to 20,000, or, preferably, from 1000-15000 and having four (poly)alkoxy ether groups each containing from 5 to 100 alkoxy repeat units; (b) from 0.01 to 2 wt. % or, preferably, from 0.1 to 1.5 wt. %, as solids, based on the total weight of the compositions, of one or more aqueous dispersions of elongated, bent or nodular colloidal silica particles, preferably, having a secondary particle size as determined by dynamic light scattering (DLS) of from 20 to 60 nm; and (c) ammonia or an amine base, wherein the compositions have a pH ranging from 9 to 11. The compositions are substantially free of metals, such as alkali or alkaline earth metals that can damage substrates in polishing.

Abstract: Acid chemical mechanical polishing compositions and methods have enhanced defect inhibition and selectively polish silicon nitride over silicon dioxide in an acid environment. The acid chemical mechanic polishing compositions include poly(2-ethyl-2-oxazoline) polymers, anionic functional colloidal silica particles, amine carboxylic acids and have a pH of 5 or less.

Abstract: The polishing pad is suitable for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The polishing pad includes radial feeder grooves in a polishing layer separating the polishing layer into polishing regions. The radial feeder grooves extend at least from a location adjacent the center to a location adjacent the outer edge of the polishing pad. Each polishing region including a series of biased grooves that connects a pair of adjacent radial feeder grooves. A majority of the biased grooves having either an inward bias toward the center of the polishing pad or an outward bias for directing polishing fluid toward the outer edge of the polishing pad.