Abstract: The polishing fluid is useful for polishing tantalum-containing barrier materials of a semiconductor substrate. The polishing fluid includes a nitrogen-containing compound having at least two nitrogen atoms comprising imine compounds and hydrazine compounds. The nitrogen-containing compound is free of electron-withdrawing substituents; and the polishing fluid is capable of removing the tantalum-containing barrier materials from a surface of the semiconductor substrate without an abrasive.
Type:
Grant
Filed:
May 19, 2006
Date of Patent:
August 3, 2010
Assignee:
Rohm and Haas Electronic Materials MCP Holdings, Inc.