Patents Assigned to Rohm and Hass Electronic Materials LLC
  • Patent number: 11960206
    Abstract: A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I): wherein, EWG, Y, R, and M+ are the same as described in the specification.
    Type: Grant
    Filed: December 6, 2022
    Date of Patent: April 16, 2024
    Assignee: ROHM AND HASS ELECTRONIC MATERIALS LLC
    Inventors: Emad Aqad, William Williams, III, James F. Cameron
  • Patent number: 11947258
    Abstract: A monomer has the structure wherein R is an organic group comprising a polymerizable carbon-carbon double bond or carbon-carbon triple bond; X and Y are independently at each occurrence hydrogen or a non-hydrogen substituent; EWG1 and EWG2 are independently at each occurrence an electron-withdrawing group; p is 0, 1, 2, 3, or 4; n is 1, 2, 3, or 4; and M+ is an organic cation. A polymer prepared from monomer is useful as a component of a photoresist composition.
    Type: Grant
    Filed: February 24, 2023
    Date of Patent: April 2, 2024
    Assignee: ROHM AND HASS ELECTRONIC MATERIALS LLC
    Inventors: Emad Aqad, James W. Thackeray, James F. Cameron
  • Patent number: 11242609
    Abstract: Silver-nickel alloy electroplating compositions and methods enable electroplating silver rich silver-nickel deposits which are bright, uniform and have a relatively low coefficient of friction. The binary silver-nickel alloy is deposited from an aqueous acid silver-nickel alloy electroplating composition. The aqueous acid silver-nickel alloy electroplating composition includes thiol compounds which shift the reduction potential of silver ions toward the reduction potential of nickel ions such that a silver rich binary silver-nickel layer is deposited on a substrate.
    Type: Grant
    Filed: October 15, 2019
    Date of Patent: February 8, 2022
    Assignee: ROHM AND HASS ELECTRONIC MATERIALS LLC
    Inventors: Jamie Y. C. Chen, Michael Lipschutz, Miguel A. Rodriguez, Kin Cheung Lo
  • Patent number: 7955978
    Abstract: Silicon containing substrates are coated with nickel. The nickel is coated with a protective layer and the combination is heated to a sufficient temperature to form nickel silicide. The nickel silicide formation may be performed in oxygen containing environments.
    Type: Grant
    Filed: August 25, 2010
    Date of Patent: June 7, 2011
    Assignee: Rohm and Hass Electronic Materials LLC
    Inventors: John P. Cahalen, Gary Hamm, George R. Allardyce, David L. Jacques