Abstract: An organic electroluminescent device includes at least two light-emissive units provided between a cathode electrode and an anode electrode opposed to the cathode electrode, each of the light-emissive units including at least one light-emissive layer. The light-emissive units are partitioned from each other by at least one charge generation layer, the charge generation layer being an electrically insulating layer having a resistivity of not less than 1.0×102 ? cm.

Abstract: An organic electroluminescent device includes at least two light-emissive units provided between a cathode electrode and an anode electrode opposed to the cathode electrode, each of the light-emissive units including at least one light-emissive layer. The light-emissive units are partitioned from each other by at least one charge generation layer, the charge generation layer being an electrically insulating layer having a resistivity of not less than 1.0×102 ?cm.

Abstract: An organic electroluminescent device includes at least two light-emissive units provided between a cathode electrode and an anode electrode opposed to the cathode electrode, each of the light-emissive units including at least one light-emissive layer. The light-emissive units are partitioned from each other by at least one charge generation layer, the charge generation layer being an electrically insulating layer having a resistivity of not less than 1.0×102 ?cm.

Abstract: An organic electroluminescent device includes at least two light-emissive units provided between a cathode electrode and an anode electrode opposed to the cathode electrode, each of the light-emissive units including at least one light-emissive layer. The light-emissive units are partitioned from each other by at least one charge generation layer, the charge generation layer being an electrically insulating layer having a resistivity of not less than 1.0×102 ?cm.

Abstract: An organic electroluminescent device includes at least two light-emissive units provided between a cathode electrode and an anode electrode opposed to the cathode electrode, each of the light-emissive units including at least one light-emissive layer. The light-emissive units are partitioned from each other by at least one charge generation layer, the charge generation layer being an electrically insulating layer having a resistivity of not less than 1.0×102 ?cm.

Abstract: An organic electroluminescent device includes at least two light-emissive units provided between a cathode electrode and an anode electrode opposed to the cathode electrode, each of the light-emissive units including at least one light-emissive layer. The light-emissive units are partitioned from each other by at least one charge generation layer, the charge generation layer being an electrically insulating layer having a resistivity of not less than 1.0×102 ?cm.

Abstract: An inverter controls the power supplied to a load such as a CCFL connected to a secondary winding of a transformer by means of pulse width modulation (PWM) control of the switches of a semiconductor switching circuit connected to the primary winding of the transformer. The current and voltage supplied to the load are fed back to the inverter in the form of a current error signal and a voltage error signal, respectively, from which a feedback signal is formed in accordance with the magnitudes of these signals. Thus, when the DC supply voltage of a DC power supply sharply rises, the inverter changes the feedback signal directly, that is, without waiting for the changes to occur in the load current and load voltage, so as to reduce the power supplied to the load. Thus, over-current and resultant viewer's discomfort is suppressed. Sudden shut down of the inverter are also prevented from occurring.

Abstract: A motor drive unit capable of detecting the position of a stationary rotor of any type of sensorless motor, determining a proper startup logic for the rotor, and starting up the motor in a stable condition. To do this, multiple stator coils of the sensorless motor are supplied with rotor-position detecting drive voltages that are adapted to vary the middle point voltage of the multiple stator coils but do not rotate the motor. The middle point voltage of the stator coils is compared with a detection reference voltage. When the result of the comparison matches one of predetermined detection logic patterns, a proper startup logic is generated in accordance with the position of the rotor specified by the matching detection logic pattern to start up the motor. Otherwise, the detection reference voltage is changed in level, and a new rotor-position detecting signal is generated to repeat the procedure for detecting the rotor position.

Abstract: A current direction detection circuit includes a monitoring transistor having a control terminal and an output terminal respectively connected with a control terminal and an output terminal of a ground side output transistor; an impedance element having one terminal connected with an input terminal of the monitoring transistor and the other terminal grounded; first and second constant-current sources; a diode-connected reference transistor interposed between the first constant-current source and ground potential; and a sensing transistor interposed between the second constant-current source and the impedance element and having a control terminal connected with the control terminal of the reference transistor. The current direction detection circuit is small yet capable of minimizing power loss of a switching regulator.

Abstract: An inverter has a semiconductor switch circuit provided in the primary circuit of a transformer. The switch circuit is controlled by a PWM circuit. The switch circuit is operated on the basis of an intermittent-operation signal having an ON state and OFF state to: set an error signal to a substantially zero level during OFF periods; gradually increase the error signal upon transition from an OFF state to an ON state; and gradually decrease the error signal upon transition from an ON state to an OFF state. Each ON phase of the intermittent operation is slowly started and slowly ended through charging and discharging of a capacitor provided in a feedback circuit. This enables concomitant application of constant-current control and intermittent-operation control to the inverter, which in turn provides a broad range of power that can be supplied to a load, significantly reduces hamming of the transformer, and prevents over-current from occurring in the inverter.

Abstract: A motor drive unit is adapted to detect a motor lock-up condition (in which an electric motor is accidentally locked during driving) based on the fact that motor drive current increases in that event. Then, a capacitor for generating a voltage signal is charged with an arbitrarily adjustable charging current to overcome the motor lock-up. To do this, an IC is formed to incorporate therein such components as a first discharging circuit for discharging the electric charge of the capacitor and a hysteresis-type comparison circuit for comparing the charging current with a threshold level to thereby adjust the charging current suitable for the motor used. Such a versatile IC as described above enables adjustment of the motor startup trial period for individual motors having different characteristics.

Abstract: Carbon nanotubes are purified by adding the carbon nanotubes into a solution in which a template compound consisting of receptor regions each including a conjugated ring structure and a spacer region that fixes the receptor region is dissolved, extracting specific carbon nanotubes into the solution, and recovering the extracted carbon nanotubes.

Abstract: A light receiving apparatus connects light to a light receiving device through a tube-type waveguide for making uniform the light intensity distribution of light. The light receiving apparatus is capable of stably receiving optical data even if partiality occurs in the NFP of the light emitted from an end of an optical fiber or even if the partiality of the NFP fluctuates.

Abstract: An attenuator attenuates input signals and outputs the signals to an amplifier arranged to amplify signals applied to two input terminals. The attenuator includes first and second output terminals to be respectively connected to the two input terminals of the amplifier, a comparison determination circuit arranged to compare a data variable corresponding to a current attenuation factor with target data corresponding to an attenuation factor as a target value, to output an up signal or a down signal, and an up-down counter arranged to increase or decrease the data variable based upon the up signal or the down signal which is outputted from the comparison determination circuit. The input signals respectively attenuated by different attenuation factors are outputted to the first and second output terminals based upon the data variable outputted from the up-down counter.

Abstract: An optical receiver is capable of minimizing fluctuations in the pulse width of an electrical signal rendered by converting an optical signal of broad-range illumination. The optical receiver includes a light-receiving element that receives an optical signal and converts the optical signal into a current; a bypass element through which a portion of the current of the light-receiving element flows; an impedance element that detects the remaining portion of the current of the light-receiving element and converts the remaining portion into a voltage signal; a voltage separation element interposed between the impedance element and the light-receiving element that separates the voltages on both sides thereof; and an automatic gain control (AGC) circuit to which the voltage signal from the impedance element is inputted and that controls the current flowing to the bypass element in accordance with the voltage signal.

Abstract: A semiconductor device increases the efficiency of the inductor having a three-dimensional spiral coil and increases the inductance value without requiring any special steps. The semiconductor device includes semiconductor elements and first, second and third metal wire layers to be used for the configuration of the semiconductor elements, a core disposed on the second metal wire layer, and a coil wherein a plurality of pieces of the first metal wire layer and a plurality of pieces of the third metal wire layer connected to the pieces via the connection holes are connected in series to define a spiral surrounding the core.

Abstract: A trench-structure semiconductor device is highly reliable and has an increased resistance to hydrofluoric acid cleaning or other cleaning of an insulation film between a gate electrode, which is embedded in a trench, and source electrode. In a trench-structure semiconductor device, a silicon nitride film is over the gate electrode and embedded up to a point close to the open edge on the inside of trench. A source electrode is formed in contact with the surface of the silicon nitride film and the surface of the source region.

Abstract: A semiconductor device that permits an increase in static destruction resistance while preventing an increase in the chip size includes a protective element formed by a polysilicon layer in which JFETs are serially connected in three stages and which is inserted between a gate electrode and source electrode of a power-MOSFET or IGBT semiconductor device. The gate insulation film of a semiconductor active element portion of the semiconductor device is protected regardless of whether the polarity of static electricity or another high voltage is positive or negative.

Abstract: A semiconductor nonvolatile memory cell comprised of a p-type silicon well 12, an n+ drain 8 and an n+ source 10, the source and the drain regions defining an channel region 7. On top of the well 12 there are laminated a thin silicon dioxide film 2 served as a gate oxide, a polysilicon layer 32 and a SrTiO3 layer 34 comprised of a high dielectric substance, in respective order. Further on top of these layers, there is formed a polysilicon layer 36 served as gate electrode. By using the memory cell and appropriate select transistors, a semiconductor nonvolatile memory device is constructed.

Abstract: A CMP polish pad used to chemically and mechanically polish a work to be polished. The CMP polish pad has polishing portions of two or more types, that have different conditions of contact with the work, provided on the pad surface. For example, polishing portions of a plurality of types having different coefficients of elasticity with respect to compression in the direction of pressing against the work may be provided on the pad surface. Also polishing portions of a plurality of types having different areas of contact with the work may be provided on the pad surface. Further, polishing portions of a plurality of types having different heights above the pad surface may be provided on the pad surface.