Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: The present invention relates to a stable palladium ion catalyst aqueous solution for electroless metal plating that does not use boric acid and can be used stably over a wide pH range. The catalyst solution for electroless plating of the present invention contains palladium ion, palladium ion complexing agent, and a specific amine compound and is alkaline.

Abstract: Organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a diene/dienophile reaction product. Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.

Abstract: New photoresist compositions are provided that comprise a carbamate compound that comprises 1) a carbamate group and 2) an ester group. Preferred photoresists of the invention may comprise a resin with acid-labile groups; an acid generator compound; and a carbamate compound that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer.

Abstract: Copper electroplating compositions which include an imidazole compound enables the electroplating of copper having uniform morphology on substrates. The composition and methods of enable copper electroplating of photoresist defined features. Such features include pillars, bond pads and line space features.

Abstract: A patterning process, comprises: (i) forming a radiation-sensitive film on a substrate, wherein the radiation-sensitive film comprises: (a) a resin, (b) a photoacid generator, (c) a first quencher, and (d) a second quencher; (ii) patternwise exposing the radiation-sensitive film to activating radiation; and (iii) contacting the radiation-sensitive film with an alkaline developing solution to form a resist pattern; wherein the resin comprises the following repeat units: wherein: R1 is selected from a hydrogen atom, an alkyl group having from 1 to 4 carbon atoms, a cyano group or a trifluoromethyl group; Z is a non-hydrogen substituent that provides an acid-labile moiety; n is from 40 to 90 mol %; m is from 10 to 60 mol %; and the total combined content of the two repeat units in the resin is 80 mol % or more based on all repeat units of the resin; and the first quencher is selected from benzotriazole or a derivative thereof.

Abstract: New photoresist compositions are provided that comprise a component that comprises a radiation-insensitive ionic compound. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a radiation-insensitive ionic compound that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer.

Abstract: Electroplating methods enable the plating of photoresist defined features which have substantially uniform morphology. The electroplating methods include copper electroplating baths with reaction products of pyrazole compounds and bisepoxides to electroplate the photoresist defined features. Such features include pillars, bond pads and line space features.

Abstract: Direct current plating methods inhibit void formation, reduce dimples and eliminate nodules. The method involves electroplating copper at a high current density followed by electroplating at a lower current density to fill through-holes.

Abstract: Direct current plating methods inhibit void formation, reduce dimples and eliminate nodules. The method involves electroplating copper at a high current density followed by a pause in electroplating and then turning on the current to electroplate at a lower current density to fill through-holes.

Abstract: A photoacid generator compound having Formula (I): wherein, EWG, Y, R, and M+ are the same as described in the specification.

Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.

Abstract: Environmentally friendly nickel electroplating compositions enable the electroplating of nickel deposits which are bright and uniform and inhibit corrosion of gold layers deposited on the bright and uniform nickel deposits. The environmentally friendly nickel electroplating compositions can be used to electroplate bright and uniform nickel deposits on various substrates over a wide current density range.

Abstract: A monomer having formula (I): wherein in formula (I), groups and variables are the same as described in the specification.

Abstract: Organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a component that comprises one or more uracil moieties. Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.

Abstract: Provided are topcoat compositions that include: a matrix polymer; a surface active polymer; an ionic thermal acid generator comprising an anion and a cation, wherein the anion, the cation, or the anion and the cation are fluorinated; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

Abstract: Organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a component that comprises one or more parabanic acid moieties. Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises one or more materials that have hetero-substituted carbocyclic aryl groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: In one aspect, coating compositions are provided that comprise a component a component that comprises one or more silicon, antimony, aluminum, yttrium, cerium, lanthanum, tin, titanium, zirconium, hafnium, indium or zinc compounds. In another aspect, coating compositions are provided that comprise a plurality of discrete particles. Preferred coating compositions of the invention are useful for antireflective purposes, particularly with an underlaying photoresist coating layer, as well as for a barrier layer in immersion lithography.

Abstract: The present invention provides methods for making polymerizable monomer compositions comprising purifying a (b) monomer mixture of (i) one or more monomers having at least two polymerizable vinyl groups and (ii) one or more monomers having a single polymerizable vinyl group as part of a (meth)acrylate ester group by any one or more of treating the monomer mixture in an activated porous alumina or silica column, sieve drying the monomer mixture in a vacuum followed by drying over dried molecular sieves having average pore sizes of from 2 to 20 Angstroms, freeze-pump-thaw (FPT) treating by freezing the monomer mixture in a vessel or container to a temperature below ?75° C., degassing the monomer mixture by application of vacuum in the range of 102 to 10?2 Pa, sealing the vessel or container under vacuum, and thawing the composition to room temperature; and, combining in an inert gas atmosphere the resulting monomer mixture (b) with a composition (a) of quantum dots in dry form or organic solvent solution.