Abstract: A FLOTOX EEPROM of the invention includes: a plurality of floating gates 11 arranged in array, each having a tunnel window 12 and allowing electron injection and extraction via the tunnel window; a plurality of select gates 13 provided in one-on-one correspondence to the plural floating gates 11; a control gate 16 shared by the plural floating gates 11; a source 17 shared by the plural floating gates 11; and a drain 18 shared by the plural floating gates 11. Therefore, the FLOTOX EEPROM does not encounter the decrease of junction breakdown voltage of a drain region, allowing the application of sufficiently high write voltage. Further, cell area can be reduced.

Abstract: An electroluminescent light emitting element is equipped with a metal electrode layer, a light emitting layer capable of emitting light by electroluminescence, and a transparent electrode layer provided in that order on a substrate, wherein the light emitted by said light emitting layer is emitted from the side adjacent to said transparent electrode layer.

Abstract: A semiconductor light emitting device includes a substrate, an n-type layer formed of gallium-nitride based compound semiconductor formed on the substrate, and a p-type layer formed of gallium-nitride based compound semiconductor formed on the substrate. Semiconductor overlying layers are constituted by the n-type layer and the p-type layer on the substrate. A light emitting layer is formed together with the n-type and p-type layers in the semiconductor overlying layers to emit light. At least one of the n-type layer and the p-type layer is formed by three or more overlying sublayers including a sublayer of AlyGa1-yN (0<y≦0.5) and a sublayer of AluGa1-uN (0≦u<y). With this structure, the semiconductor light emitting device is almost free from lattice mismatch to thereby enhance electron mobility and hence light emission efficiency even where the overlying semiconductor layers are different in lattice constant from the substrate.

Abstract: A laser diode, which includes a substrate, a laser diode chip bonded on the substrate through a sub-mount, and a monitor element formed on the substrate, monitors laser light emitted from a rear cleavage face of the laser diode chip. The laser diode chip has its front cleavage face covered by a transparent resin. As a result, variations of the surface state of the front cleavage face are prevented.