Abstract: The image processing circuit 400 is provided with R RAM 418, G RAM 420, and B RAM 422. During the vertical blanking interval of a display device 122, tone correction results corresponding to all values which can be inputted as the input signal Di are stored as a lookup table (LUT) in each RAM. When an image is displayed in the display device 122, tone correction of the input signal Di is indirectly performed by referencing the LUT. Redundant computation can thereby be avoided, and power consumption can be reduced.

Abstract: Semiconductor substrates are cleaned and subsequently oxidized. After the semiconductor is oxidized it is textured to reduce incident light reflectance. The textured semiconductors can be used in the manufacture of photovoltaic devices.

Abstract: The semiconductor device according to the present invention includes a plurality of capacitance elements. Each capacitance element has a structure obtained by holding a capacitance film made of an insulating material between first and second electrodes made of a metallic material. The first and second electrodes are so arranged as to partially overlap each other while relatively positionally deviating from each other in a direction orthogonal to the opposed direction thereof. The plurality of capacitance elements are stacked in the opposed direction.

Abstract: A high speed method of depositing palladium and palladium alloys is disclosed. The high speed method uses an aqueous, ammonia-based bath which has reduced free ammonia in the bath. The high speed method may be used to deposit palladium and palladium alloy coatings on various substrates such as electrical devices and jewelry.

Abstract: Anti-displacement hard gold compositions are disclosed for inhibiting displacement of metal from substrates which are plated with the hard gold. The anti-displacement hard gold compositions may be used to spot plate substrates with hard gold.

Abstract: Provided are a semiconductor device which can shorten reverse recovery time without increasing leakage current between the drain and the source, and a fabrication method for such semiconductor device.

Abstract: An infrared element (10a) which includes at least a light emitting layer forming portion (9a) composed of, for example, a first conductivity type cladding layer (2a), an active layer (3a), and a second conductivity type cladding layer (4a) for emitting infrared light, is formed on a semiconductor substrate (1), and a red element (10b) which includes at least a light emitting layer forming portion (9b) composed of, for example, a first conductivity type cladding layer (2b), an active layer (3b), and a second conductivity type cladding layer (4b) for emitting red light, is formed on the same semiconductor substrate (1). And their second conductivity type cladding layers (4a and 4b) are made of the same material. As a result, forming process of their ridge portions may be communized and both of the elements can be formed respectively, with a window structure capable of high output operation.

Abstract: A cold seal adhesive comprising a multi-stage polymer having a low-Tg first stage and a high-Tg second stage.

Abstract: A semiconductor device includes: a transistor having a first electrode coupled to a first power source node to which a first power source voltage is supplied, and a second electrode, and supplying a reference current to a temperature detection element; a diffused resistor including a first semiconductor region having a potential-fixing node coupled to the first power source node, and a second semiconductor region having a first resistor node coupled to the second electrode of the transistor and a second resistor node coupled to a second power source node to which a second power source voltage is supplied, and formed at a surface of the first semiconductor region; and a leakage current correction circuit for allowing a current having approximately the same magnitude and the same direction as a magnitude and a direction of a current flowing via the potential-fixing node and the second resistor node, to flow not via the diffused resistor but via the transistor.

Abstract: An organic electroluminescence device, includes a substrate; an anode layer; an organic layer including at least one organic material having a fluorescence spectrum; and a cathode layer, wherein the organic electroluminescence device has a primary light outgoing direction that is parallel to a surface of the substrate, wherein the organic electroluminescence device has an optical waveguide that includes a core layer formed by the anode layer and the organic layer, and a clad layer formed by the substrate and the cathode layer, and wherein the optical waveguide has cutoff wavelengths in a transverse electric mode any one of which is within a wavelength range of a full width at half maximum of the fluorescence spectrum of any one of the organic materials included in the organic layer.

Abstract: A class-D power amplifier according to the present invention includes: a pulse width modulation circuit which modulates an analog signal into low-level and high-level binary signals; and a detection circuit which turns off operation of a circuit connected with a back stage of the pulse modulation circuit if the high level or the low level of the binary signal output from the pulse width modulation circuit is maintained for a predetermined time.

Abstract: The semiconductor device can prevent damages on a semiconductor chip even when a soldering material is used for bonding the back surface of the semiconductor chip to the junction plane of a chip junction portion such as an island or a die pad. This semiconductor device includes a semiconductor chip and a chip junction portion having a junction plane that is bonded to the back surface of the semiconductor chip with a soldering material. The junction plane is smaller in size than the back surface of the semiconductor chip. This semiconductor device may further include a plurality of extending portions which extend respectively from the periphery of the junction plane to directions parallel with the junction plane.

Abstract: A voltage amplifier circuit (300) comprises: an input voltage generating unit (302) that generates an input voltage (VL1) based on a set value (SL); an operational amplifier (303) that amplifies the input voltage (VL1) such that the input voltage (VL1) becomes equal to a feedback voltage (VL3), thereby generating an output voltage (VL2); a feedback resistor unit (304) that performs a voltage division between the output voltage (VL2) applied to one end of the feedback resistor unit and a reference voltage (VL4) applied to the other end of the feedback resistor unit, thereby generating the feedback voltage (VL3); a selector control unit (305) that generates a selector control signal (SS) based on the set value (SL); and a selector (306) that selects, based on the selector control signal SS, the reference voltage (VL4) from a plurality of candidates (GND/VR).

Abstract: In the motor drive apparatus, a Hall element outputs a first sinusoidal signal and a second sinusoidal signal, of mutually opposite phases, in accordance with rotor position. A hysteresis comparator compares the first sinusoidal signal and the second sinusoidal signal outputted from the Hall element, and outputs a rectangular wave signal. A pulse width modulation signal generation circuit detects timing at which phase switches, based on the first sinusoidal signal and the second sinusoidal signal outputted from the Hall element, and outputs a pulse width modulation signal in which duty ratio gradually changes, in a predetermined time-period in which the phase switches. A drive circuit combines the rectangular wave signal and the pulse width modulation signal by a logical operation, and drives the fan motor.

Abstract: In one aspect, the present invention relates to coating compositions that comprise a resin component, wherein the predominant portion of the resin component comprising one or more resins that are at least substantially free of fluorine. Coating compositions of the invention are useful as photoresist overcoat layers, including in immersion lithography processing.

Abstract: A nitride semiconductor device includes: a nitride semiconductor structure portion including a first layer made of an n-type group III nitride semiconductor, a second layer made of a group III nitride semiconductor containing a p-type impurity provided on the first layer and an n-type region formed on a part of the second layer, and having a wall surface extending over the first layer, a body region of the second layer other than the n-type region and the n-type region; a gate insulating film formed such that the gate insulating film is opposed to the body region on the wall surface; a gate electrode formed such that the gate electrode is opposed to the body region through the gate insulating film; a source electrode formed such that the source electrode is electrically connected to the n-type region; a drain electrode formed such that the drain electrode is electrically connected to the first layer; and a body electrode formed such that the body electrode is electrically connected to the body region.

Abstract: An organic-inorganic composite particle containing an inorganic particle having a plurality of polymer particles attached to the inorganic particle and a polymer layer encapsulating the attached polymer particles. A process is provided for the organic-inorganic composite particle. The organic-inorganic composite particle is useful in the preparation of dried coatings that have improved hiding, whiteness, or gloss.

Abstract: A regulator circuit stabilizes the input voltage applied to an input terminal before outputting the output voltage via an output terminal. An output transistor is provided between the input terminal and the output terminal. An error amplifier adjusts the voltage applied to the control terminal of the output transistor such that a voltage that corresponds to the output voltage approaches a predetermined reference voltage. A fluctuation detection capacitor is provided on a path from the input terminal to the grounded terminal. One terminal of the fluctuation detection capacitor is set to a fixed electric potential. In a case that the input voltage is lower than the voltage at the other terminal of the fluctuation detection capacitor, an undershoot suppressing circuit forcibly reduces the gate voltage of the output transistor.

Abstract: A temperature protection circuit comprises means adapted to compare the temperature being monitored with each of threshold temperatures and judging that the temperature being monitored reaches a threshold temperature when the temperature being monitored is maintained at the threshold temperature or more for a predetermined confirmation period, means adapted to set a longer confirmation period as the threshold temperature compared with the temperature being monitored is lower, means adapted to generate one of corresponding temperature protection signals (Sarm, Slmt, Stsd1, Stsd2) according to the judgment of which threshold temperature the temperature being monitored reaches. With this constitution, temperature protection operation can be preformed with high accuracy and high safety without unnecessarily narrowing the range of the operating temperature of an IC to be protected.

Abstract: A linear regulator is provided which stabilizes an input voltage based on a reference voltage source that generates a reference voltage, and the reference voltage generated by the reference voltage. An output voltage of the linear regulator is supplied as a power supply voltage of a switching controller and the reference voltage source. The linear regulator is configured to enable switching of a regulation mode in which voltage is outputted according to the reference voltage, and a bypass mode in which an input voltage is outputted as it is, with no relation to the reference voltage. When a power supply apparatus is started up, during a time period until the input voltage reaches a predetermined threshold voltage, the linear regulator operates in the bypass mode, and when the input voltage exceeds the threshold voltage, operates in the regulation mode.