Abstract: A semiconductor device capable of improving a mechanical strength of a porous silica film while inhibiting a film located on a lower layer of the porous silica film from deterioration is obtained. This semiconductor device includes an organic film formed on a semiconductor substrate, an ultraviolet light permeation suppressive film, formed on a surface of the organic film, composed of a material which is difficult to be permeable by ultraviolet light, and a first porous silica film formed on a surface of the ultraviolet light permeation suppressive film.

Abstract: A SiC field effect transistor includes: a SiC semiconductor layer; and a MIS transistor structure including a first conductivity type source region in the semiconductor layer, a second conductivity type body region in the semiconductor layer in contact with the source region, a first conductivity type drift region in the semiconductor layer in contact with the body region, a gate electrode opposed to the body region with a gate insulation film interposed between the electrode and the body region for forming a channel in the body region to cause electric current to flow between the drift region and the source region, and a barrier forming layer in contact with the drift region to form a junction barrier by the contact with the drift region, the junction barrier being lower than a diffusion potential of a body diode defined by a junction between the body region and the drift region.

Abstract: Provided is an electronic circuit including an upper control unit and a lower control unit. The upper control unit performs a logic transition of a gate signal so as to off-latch an upper switch by using the fall edge of a drive signal as a trigger and release the off-latch of the upper switch by using the rise edge of a monitor signal as a trigger. The lower control unit performs a logic transition of the gate signal so as to off-latch a lower switch by using the rise edge of the drive signal as a trigger and release the off-latch of the lower switch by using the rise edge of a monitor signal as a trigger.

Abstract: A semiconductor light emitting device of the present invention includes a substrate (1), an n-GaN layer (2) supported by the substrate (1), a p-GaN layer (7) which is located farther from the substrate (1) than the n-GaN layer (2) is, an active layer (4) formed between the n-GaN layer (2) and the p-GaN layer (7) and containing InGaN, a sublimation preventing layer (5) formed between the active layer (4) and the p-GaN layer (7) and containing InGaN, and an In composition gradient layer (6) sandwiched between the sublimation preventing layer (5) and the p-GaN layer (7) and having such In composition ratio gradient that the In composition ratio decreases in the thickness direction toward the p-GaN layer (7).

Abstract: An optical semiconductor device (A1) comprises a light reflector (5) and an optical semiconductor chip (3). The reflector (5) includes two first reflecting surfaces (50a) spaced from each other in direction x, and two second reflecting surfaces (50b) spaced from each other in direction y. The chip (3) includes a rectangular upper surface and a rectangular lower surface spaced from each other in direction z perpendicular to both of the directions x and y. The chip (3) further includes at least one light-emitting surface (31) extending between the upper and the lower surfaces. The light-emitting surface (31) faces a corresponding one of the second reflecting surfaces (50b). The light-emitting surface (31) is non-parallel to the corresponding second reflecting surfaces (50b) as viewed in parallel to the direction z.

Abstract: There are included a semiconductor substrate provided with a desirable element region, an electrode pad formed to come in contact with a surface of the semiconductor substrate or a wiring layer provided on the surface of the semiconductor substrate, a bonding pad formed on a surface of the electrode pad through an intermediate layer, and a resin insulating film for covering a peripheral edge of the bonding pad such that an interface of the bonding pad and the intermediate layer is not exposed to a side wall.

Abstract: This invention intends to improve the productivity and quality and reduce the production cost by adopting the same structure for the connector as that of the wiring board. A connector-equipped wiring board (A), wherein a connector (30) connected to a wiring board (10) with an electronic component (C) mounted thereon through a flexible wiring plate (20) can be routed to the wiring board (10), characterized in that said connector (30) is formed of the same board as the wiring board (10) is formed, and has an exposed terminal pattern (31) formed on its surface and electrically connected to said flexible wiring plate (20).

Abstract: The present invention relates to a sound source device, and more particularly, it aims at providing a sound source device, in which a sufficient sound emitting quantity can be attained, capable of obtaining a reproduced sound of musically rich expression. And, in order to attain the aforementioned object, it is possible to solve such a problem that energy density is low and sound emitting efficiency is inferior by employing a pseudo-rectangular wave increasing spectral density as waveform data input in a waveform table (TB). For this, it is rendered a spectrum including spectral lines X1, X2, X3 and X4 in a range matching with a frequency domain (HR) having high sound emitting efficiency and including even harmonics.

Abstract: In a method for manufacturing semiconductor light emitting device, when a gallium nitride based compound semiconductor layers which include at least an n-type layer and p-type layer and which form a light emitting layer, are laminated on a substrate and heat treatment is performed for activation of the p-type layer of the laminated semiconductor layers, the heat treatment is performed under an atmosphere including oxygen. With this arrangement, the heat treatment for activating the p-type layer of the laminated semiconductor layers comprising gallium nitride based compound semiconductor can be performed in a short time and moreover to reliably perform activation.

Abstract: A color encoder is incorporated in an apparatus for reproducing a signal recorded on a disk for a video-CD, CD-G, or similar system. The color encoder serves as an interface between such an apparatus and a television receiver. The color encoder converts R, G, and B signals reproduced from a disk into a color television signal. The color encoder is provided with a circuit for generating a blanking interval control signal that is used to switch between blanking intervals of different duration in accordance with a select signal, so that the duration of the time interval during which video signals are suppressed can be selectively varied. The color encoder has, in the input paths for the R, G, and B signals, switches for enabling and disabling the passage of those signals, and these switches are controlled by the blanking control signal.