Abstract: Embodiments include methods that may be used to optically obtain the precise three-dimensional location of multiple objects from one or more two dimensional images. An optical point spread function having a transverse shape which varies with axial distance may be implemented to obtain depth information. The transverse variation in the PSF with depth may be produced using a cylindrical lens. The objects may be imaged by a focal plane array detector. One or more 2D images may be used to find the 3D location of the objects using sparse signal reconstruction methods.

Abstract: An apparatus and method are disclosed for producing spectrographic images free of SI, SII, and SIII field aberrations. The apparatus includes a focusing element placed at a distance from a dispersing element equal to the radius of curvature of the focusing element. The apparatus further includes at least one correcting plate for adding or subtracting abberations.

Abstract: An apparatus and method are disclosed for producing spectrographic images free of SI, SII, and SIII field aberrations. The apparatus includes a focusing element placed at a distance from a dispersing element equal to the radius of curvature of the focusing element. The apparatus further includes at least one correcting plate for adding or subtracting abberations.

Abstract: A backside-illuminated image sensor is disclosed having improved quantum efficiency (QE) in the near infrared wavelengths (NIR: 750-1100 nm) with minimal optical interference fringes produced by multiple reflected rays within the photosensitive Si region of the sensor, which may be a charge-coupled device, a complementary metal oxide sensor or an electron-multiplication sensor. The invention comprises a fringe suppression layer applied to the backside surface of the photosensitive Si region of a detector (Si substrate) whereby the fringe suppression layer functions in concert with the Si substrate to reduce the occurrence of interference fringes in the NIR while maintaining a high QE over a broad range of wavelengths (300-1100 nm). The combination of a fringe suppression layer applied to a Si substrate provides a new class of back illuminated solid state detectors for imaging.

Abstract: A backside-illuminated image sensor is disclosed having improved quantum efficiency (QE) in the near infrared wavelengths (NIR: 750-1100 nm) with minimal optical interference fringes produced by multiple reflected rays within the photosensitive Si region of the sensor, which may be a charge-coupled device, a complementary metal oxide sensor or an electron-multiplication sensor. The invention comprises a fringe suppression layer applied to the backside surface of the photosensitive Si region of a detector (Si substrate) whereby the fringe suppression layer functions in concert with the Si substrate to reduce the occurrence of interference fringes in the NIR while maintaining a high QE over a broad range of wavelengths (300-1100 nm). The combination of a fringe suppression layer applied to a Si substrate provides a new class of back illuminated solid state detectors for imaging.

Abstract: A charged coupled device is disclosed including an asymmetrical split with independent control over the regions on opposite sides of the split. The charge coupled device is configurable for use in multiline or kinetic spectroscopy, and includes two separate horizontal registers with optional charge dump regions for improving efficiency.