Patents Assigned to ROSESTREET LABS, LLC
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Publication number: 20190081193Abstract: An ultraviolet light sensor and method of manufacturing thereof are disclosed. The ultraviolet light sensor includes Group-III Nitride layers adjacent to a silicon wafer with one of the layers at least partially exposed such that a surface thereof can receive UV light to be detected. The Group-III Nitride layers include a p-type layer and an n-type layer, with p/n junctions therebetween forming at least one diode. Conductive contacts are arranged to conduct electrical current through the sensor as a function of ultraviolet light received at the outer Group-III Nitride layer. The Group-III Nitride layers may be formed from, e.g., GaN, InGaN, AlGaN, or InAlN. The sensor may include a buffer layer between one of the Group-III Nitride layers and the silicon wafer. By utilizing silicon as the substrate on which the UV sensor diode is formed, a UV sensor can be produced that is small, efficient, cost-effective, and compatible with other semiconductor circuits and processes.Type: ApplicationFiled: November 8, 2018Publication date: March 14, 2019Applicant: ROSESTREET LABS, LLCInventors: ROBERT FORCIER, WLADYSLAW WALUKIEWICZ
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Patent number: 10128389Abstract: An ultraviolet light sensor and method of manufacturing thereof are disclosed. The ultraviolet light sensor includes Group-III Nitride layers adjacent to a silicon wafer with one of the layers at least partially exposed such that a surface thereof can receive UV light to be detected. The Group-III Nitride layers include a p-type layer and an n-type layer, with p/n junctions therebetween forming at least one diode. Conductive contacts are arranged to conduct electrical current through the sensor as a function of ultraviolet light received at the outer Group-III Nitride layer. The Group-III Nitride layers may be formed from, e.g., GaN, InGaN, AlGaN, or InAlN. The sensor may include a buffer layer between one of the Group-III Nitride layers and the silicon wafer. By utilizing silicon as the substrate on which the UV sensor diode is formed, a UV sensor can be produced that is small, efficient, cost-effective, and compatible with other semiconductor circuits and processes.Type: GrantFiled: September 28, 2017Date of Patent: November 13, 2018Assignee: ROSESTREET LABS, LLCInventors: Robert Forcier, Wladyslaw Walukiewicz
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Publication number: 20180019351Abstract: An ultraviolet light sensor and method of manufacturing thereof are disclosed. The ultraviolet light sensor includes Group-III Nitride layers adjacent to a silicon wafer with one of the layers at least partially exposed such that a surface thereof can receive UV light to be detected. The Group-III Nitride layers include a p-type layer and an n-type layer, with p/n junctions therebetween forming at least one diode. Conductive contacts are arranged to conduct electrical current through the sensor as a function of ultraviolet light received at the outer Group-III Nitride layer. The Group-III Nitride layers may be formed from, e.g., GaN, InGaN, AlGaN, or InAlN. The sensor may include a buffer layer between one of the Group-III Nitride layers and the silicon wafer. By utilizing silicon as the substrate on which the UV sensor diode is formed, a UV sensor can be produced that is small, efficient, cost-effective, and compatible with other semiconductor circuits and processes.Type: ApplicationFiled: September 28, 2017Publication date: January 18, 2018Applicant: ROSESTREET LABS, LLCInventors: ROBERT FORCIER, WLADYSLAW WALUKIEWICZ
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Patent number: 9780239Abstract: An ultraviolet light sensor and method of manufacturing thereof are disclosed. The ultraviolet light sensor includes Group-III Nitride layers adjacent to a silicon wafer with one of the layers at least partially exposed such that a surface thereof can receive UV light to be detected. The Group-III Nitride layers include a p-type layer and an n-type layer, with p/n junctions therebetween forming at least one diode. Conductive contacts are arranged to conduct electrical current through the sensor as a function of ultraviolet light received at the outer Group-III Nitride layer. The Group-III Nitride layers may be formed from, e.g., GaN, InGaN, AlGaN, or InAlN. The sensor may include a buffer layer between one of the Group-III Nitride layers and the silicon wafer. By utilizing silicon as the substrate on which the UV sensor diode is formed, a UV sensor can be produced that is small, efficient, cost-effective, and compatible with other semiconductor circuits and processes.Type: GrantFiled: October 24, 2012Date of Patent: October 3, 2017Assignee: ROSESTREET LABS, LLCInventors: Robert Forcier, Wladyslaw Walukiewicz
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Patent number: 9275981Abstract: A semiconductor integrated circuit has one or more integral nitride-type sensors. In one embodiment, an integral nitride-type sensor and a coplanar supplemental circuit are formed from a common silicon substrate base. In another embodiment, an integral nitride-type sensor and a supplemental circuit are integrated in a vertical orientation.Type: GrantFiled: November 24, 2014Date of Patent: March 1, 2016Assignee: RoseStreet Labs, LLCInventor: Robert Forcier
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Publication number: 20150102450Abstract: A semiconductor integrated circuit has one or more integral nitride-type sensors. In one embodiment, an integral nitride-type sensor and a coplanar supplemental circuit are formed from a common silicon substrate base. In another embodiment, an integral nitride-type sensor and a supplemental circuit are integrated in a vertical orientation.Type: ApplicationFiled: November 24, 2014Publication date: April 16, 2015Applicant: RoseStreet Labs, LLCInventor: Robert Forcier
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Patent number: 8937298Abstract: A semiconductor integrated circuit has one or more integral nitride-type sensors. In one embodiment, an integral nitride-type sensor and a coplanar supplemental circuit are formed from a common silicon substrate base. In another embodiment, an integral nitride-type sensor and a supplemental circuit are integrated in a vertical orientation.Type: GrantFiled: March 13, 2013Date of Patent: January 20, 2015Assignee: RoseStreet Labs, LLCInventor: Robert Forcier
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Publication number: 20140053895Abstract: A method and structure for a solar cell forms and utilizes a low resistivity and high transmission semiconductor in a top and/or bottom layer (e.g., a top or bottom contact). Some embodiments relate to solar cells having a top or bottom transparent contact layer comprising doped cadmium oxide (CdO) or alloys of CdO.Type: ApplicationFiled: March 11, 2013Publication date: February 27, 2014Applicant: RoseStreet Labs, LLCInventors: LOTHAR A. REICHERTZ, Robert Forcier
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Publication number: 20130099249Abstract: An ultraviolet light sensor and method of manufacturing thereof are disclosed. The ultraviolet light sensor includes Group-III Nitride layers adjacent to a silicon wafer with one of the layers at least partially exposed such that a surface thereof can receive UV light to be detected. The Group-III Nitride layers include a p-type layer and an n-type layer, with p/n junctions therebetween forming at least one diode. Conductive contacts are arranged to conduct electrical current through the sensor as a function of ultraviolet light received at the outer Group-III Nitride layer. The Group-III Nitride layers may be formed from, e.g., GaN, InGaN, AlGaN, or InAlN. The sensor may include a buffer layer between one of the Group-III Nitride layers and the silicon wafer. By utilizing silicon as the substrate on which the UV sensor diode is formed, a UV sensor can be produced that is small, efficient, cost-effective, and compatible with other semiconductor circuits and processes.Type: ApplicationFiled: October 24, 2012Publication date: April 25, 2013Applicant: ROSESTREET LABS, LLCInventor: RoseStreet Labs, LLC
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Publication number: 20130074912Abstract: Disclosed is a solar cell or component thereof that includes a p-type thin film solar light absorbing layer having one or more compositions of group II-VI alloys described as CdTexM1-x, where M is S, Se or O. An n-type thin-film transparent window layer comprising CdS is provided adjacent to the CdTexMi-x p-type thin film solar light absorbing layer such that a p-n junction formed between the layers.Type: ApplicationFiled: September 24, 2012Publication date: March 28, 2013Applicant: ROSESTREET LABS, LLCInventor: RoseStreet Labs, LLC