Abstract: A process for the preparation of a sputtering target which comprises sub-stoichiometric titanium dioxide, TiOx, where x is below 2, having an electrical resistivity of less than 0.5 ohm.cm, optionally together with niobium oxide, which process comprises plasma spraying titanium dioxide, TiO2, optionally together with niobium oxide, onto a target base in an atmosphere which is oxygen deficient and which does not contain oxygen-containing compounds, the target vase being coated with TiOx which is solidified by cooling under conditions which prevent the sub-stiochiometric titanium dioxide from combining with oxygen.

Abstract: A process for the preparation of a sputtering target which comprises sub-stoichiometric titanium dioxide, TiOx, where x is below 2, having an electrical resistivity of less than 0.5 ohm.cm, optionally together with niobium oxide, which process comprises plasma spraying titanium dioxide, TiO2, optionally together with niobium oxide, onto a target base in an atmosphere which is oxygen deficient and which does not contain oxygen-containing compounds, the target base being coated with TiOx, which is solidified by cooling under conditions which prevent the sub-stoichiometric titanium dioxide from combining with oxygen.