Abstract: The present invention relates to a process for the preparation of a silicate comprising at least silicon and oxygen, comprising (1) mixing of silicon dioxide and/or of a silicon dioxide precursor with an aqueous solution comprising at least one tetraalkylammonium compound comprising R1R2R3R4N+ and at least one base, wherein R1 and R2 are methyl and both R3 and R4 are n-propyl; (2) heating of the colloidal solution obtained according to (1) to a temperature in the range of from greater than the boiling point of the colloidal solution under the chosen pressure to 180° C. at atmospheric pressure to give a suspension comprising at least one silicate, wherein the silicate comprising at least silicon and oxygen is added as a crystallization auxiliary in (1).

Abstract: The present invention relates to a tectosilicate having an X-ray diffraction pattern in which at least the following reflections occur: Intensity (%) Diffraction angle 2?/° [Cu K(alpha 1)] 100 ?9.8-10.2 24-34 11.0-11.4 ?9-19 15.5-15.9 12-22 19.4-19.6 19-29 19.6-19.8 100% relating to the intensity of the maximum peak in the X-ray diffraction pattern.

Abstract: A sheet silicate, a framework silicate, and a process of producing the same.

Abstract: The present invention relates to a tectosilicate having an X-ray diffraction pattern in which at least the following reflections occur: Intensity (%) Diffraction angle 2?/° [Cu K(alpha 1)] 100 ?9.8-10.2 24-34 11.0-11.4 ?9-19 15.5-15.9 12-22 19.4-19.6 19-29 19.6-19.8 100% relating to the intensity of the maximum peak in the X-ray diffraction pattern.

Abstract: The present invention relates to a process for the preparation of a silicate comprising at least silicon and oxygen, comprising (1) mixing of silicon dioxide and/or of a silicon dioxide precursor with an aqueous solution comprising at least one tetraalkylammonium compound comprising R1R2R3R4N+ and at least one base, wherein R1 and R2 are methyl and both R3 and R4 are n-propyl; (2) heating of the colloidal solution obtained according to (1) to a temperature in the range of from greater than the boiling point of the colloidal solution under the chosen pressure to 180° C. at atmospheric pressure to give a suspension comprising at least one silicate, wherein the silicate comprising at least silicon and oxygen is added as a crystallization auxiliary in (1).

Abstract: The present invention relates to a process for the preparation of a silicate comprising at least silicon and oxygen, comprising (1) mixing of silicon dioxide and/or of a silicon dioxide precursor with an aqueous solution comprising at least one tetraalkylammonium compound comprising R1R2R3R4N+ and at least one base, wherein R1 and R2 are methyl and both R3 and R4 are n-propyl; (2) heating of the colloidal solution obtained according to (1) to a temperature in the range of from greater than the boiling point of the colloidal solution under the chosen pressure to 180° C. at atmospheric pressure to give a suspension comprising at least one silicate, wherein the silicate comprising at least silicon and oxygen is added as a crystallization auxiliary in (1).

Abstract: The present invention relates to a tectosilicate having an X-ray diffraction pattern in which at least the following reflections occur: Intensity (%) Diffraction angle 2?/° [Cu K(alpha 1)] 100 ?9.8-10.2 24-34 11.0-11.4 ?9-19 15.5-15.9 12-22 19.4-19.6 19-29 19.6-19.8 100% relating to the intensity of the maximum peak in the X-ray diffraction pattern.