Patents Assigned to Runesas Technology Corporation
  • Mask Pattern Designing Method Using Optical Proximity Correction in Optical Lithography, Designing Device, and Semiconductor Device Manufacturing Method Using the Same
    Publication number: 20080276215
    Abstract: A method for designing a mask pattern realizes shortening the ever-growing time for the OPC treatment, decreases the fabrication TAT of a semiconductor device and cuts cost. A method for fabricating a semiconductor device uses the mask pattern designed. This invention performs the OPC treatment in advance on a cell library constituting the basic configuration of a semiconductor circuit pattern and prepares a semiconductor chip using the cell library that has undergone the OPC treatment.
    Type: Application
    Filed: March 28, 2006
    Publication date: November 6, 2008
    Applicants: National Inst. of Adv. Indust. Science and Tech., Runesas Technology Corporation
    Inventors: Tetsuya Higuchi, Hirokazu Nosato, Masahiro Murakawa, Hidenori Sakanashi, Nobuyuki Yoshioka, Tsuneo Terasawa, Toshihiko Tanaka