Abstract: Method for treating and/or coating a surface of an object, especially for coating a surface of a substrate such as a semiconductor component or solar cell, in which the surface is supplied with a gas that contains particles that will interact and/or react with the surface, forming a coating thereon. The surface of the object is oriented at an angle ? from the vertical, and the gas is directed toward the surface such that it flows along the object by force of convection, starting from the base area of the surface of the object.

Abstract: The invention relates to a method for manufacture of a semiconductor component by the formation of a hydrogenous layer containing silicon on a substrate comprising or containing silicon such as a wafer or film. In order to achieve a good surface and volume passivation, it is proposed that during formation of the siliceous layer in the form of SiNxOy with 0<x≦1.5 and 0≦y≦2 one or more catalytically acting dopants are selectively added into the layer which release hydrogen from the SiNxOy layer. The concentration C of the dopants is 1×1014 cm3≦C≦1021 cm3.