Patents Assigned to Ryoden Semiconductor System Engineering Corp.
  • Publication number: 20040179341
    Abstract: A power module includes a box-shaped smoothing capacitor (20) for smoothing a DC supply voltage to be externally applied to a power semiconductor device (5). The smoothing capacitor (20) is in contact with a side surface of a case frame (6) including a side (along which an N-terminal (8N) and a P-terminal (8P) are arranged) of a top surface of the case frame (6), and has a top surface level with the top surface of the case frame (6). An N-electrode (21N) and a P-electrode (21P) of the smoothing capacitor (20) are disposed on the top surface of the smoothing capacitor (20) and in proximity to the N-terminal (8N) and the P-terminal (8P) of a power module body portion (99), respectively. The power module can reduce a circuit inductance, is reduced in size and weight, and has good resistance to vibration.
    Type: Application
    Filed: March 29, 2004
    Publication date: September 16, 2004
    Applicants: Mitsubishi Denki Kabushiki Kaisha, Ryoden Semiconductor System Engineering Corp.
    Inventors: Nobuyoshi Kimoto, Takanobu Yoshida, Naoki Yoshimatsu, Masuo Koga, Dai Nakajima, Gourab Majumdar, Masakazu Fukada
  • Publication number: 20040017279
    Abstract: The present invention protects a wiring against an etchant when a fuse connected to this wiring is subjected to a laser blow. A fuse has a barrier metal at its lower side. A plug is connected to the lower side of the fuse. The plug has a barrier metal at least at its lower side. Even if the fuse is partly removed through the laser blow at a region other than a portion where the fuse is connected to the plug, two layers of the barrier metals remain between the removed portion and a lower wiring. This enlarges the margin for preventing the adverse influence, such as corrosion and breaking of the lower wiring, brought by an etchant associated in other manufacturing process.
    Type: Application
    Filed: January 24, 2003
    Publication date: January 29, 2004
    Applicants: MITSUBISHI DENKI KABUSHIKI KAISHA, Ryoden Semiconductor System Engineering Corp.
    Inventors: Takao Kamoshima, Junko Izumitani, Shigeki Sunada