Abstract: A method of treating a wiring substrate according to an embodiment includes, in a semi-additive process: (1) contacting the wiring substrate with a pre-etching treatment liquid composition containing a chloride ion, the wiring substrate containing a seed layer formed of an electroless copper and a wiring pattern formed of an electrolytic copper; and (2) continuously, etching the wiring substrate with an etching liquid composition containing a hydrogen peroxide, a sulfuric acid, a tetrazole, a chloride ion, a copper ion and a water.
Type:
Grant
Filed:
April 18, 2014
Date of Patent:
March 29, 2016
Assignees:
MITSUBISHI GAS CHEMICAL COMPANY, INC., RYOKO CHEMICAL CO., LTD.
Abstract: A method of treating a wiring substrate according to an embodiment includes, in a semi-additive process: (1) contacting the wiring substrate with a pre-etching treatment liquid composition containing a chloride ion, the wiring substrate containing a seed layer formed of an electroless copper and a wiring pattern formed of an electrolytic copper; and (2) continuously, etching the wiring substrate with an etching liquid composition containing a hydrogen peroxide, a sulfuric acid, a tetrazole, a chloride ion, a copper ion and a water.
Type:
Application
Filed:
April 18, 2014
Publication date:
October 23, 2014
Applicants:
Mitsubishi Gas Chemical Company, Inc., Ryoko Chemical Co., Ltd.