Abstract: A neural network includes first electrode lines in parallel, second electrode lines in parallel, a ferroelectric layer, neuron circuits, a first direction control circuit, and a second direction control circuit. The second electrode lines extend in a direction different from the first electrode lines. The ferroelectric layer is arranged between the first electrode lines and the second electrode lines. The neuron circuits are provided in the first electrode lines, respectively. The first direction control circuit is connected between the neuron circuits and the first electrode lines. The second direction control circuit is connected between the neuron circuits and the second electrode lines. The first electrode lines and the second electrode lines are capacitively coupled to form synapse devices at intersections in a plan view, each of the intersections being a portion where a first electrode line and a second electrode line intersect with each other.

Abstract: An oxide film according to this invention is a film of an oxide (possibly including inevitable impurities) containing silver (Ag) and nickel (Ni). This oxide film is an aggregate of microcrystals, an amorphous form including microcrystals, or an amorphous form and has p-type conductivity, which exhibits no clear diffraction peak with the XRD analysis, as seen in a chart in FIG. 3 indicating X-ray diffraction (XRD) analysis results of a first oxide film and a second oxide film. This oxide film achieves a broader bandgap than that of a conventional oxide film as well as high p-type conductivity. This oxide film is an aggregate of microcrystals, an amorphous form containing microcrystals, or an amorphous form as described above, and is thus easily formed on a large substrate and is suitable also for industrial production.

Abstract: A semiconductor device includes: a substrate; a p-type organic transistor including an organic semiconductor layer arranged on or above the substrate; and an n-type inorganic transistor including an inorganic semiconductor layer arranged on or above the organic transistor, wherein a channel region of the inorganic transistor overlaps a channel region of the organic transistor at least partially in a plan view.

Abstract: One oxide film of the present invention is a film of an oxide (which can contain incidental impurities) containing one transition element selected from the group consisting of niobium (Nb) and tantalum (Ta) and copper (Cu). The oxide film is an aggregate of microcrystals, an amorphous form including microcrystals or an amorphous form, which shows no clear diffraction peak in an XRD analysis and has p-type conductivity as shown in the chart of FIG. 5 showing the results of XRD (X-ray diffraction) analyses of a first oxide film and a second oxide film. According to this oxide film, p-type conductivity higher than that of a conventional oxide film is obtained. This oxide film is an aggregate of microcrystals, an amorphous form containing microcrystals or an amorphous form, is consequently easily formed on a large substrate, and is therefore suitable also for industrial production.

Abstract: A semiconductor device includes: a substrate; a p-type organic transistor including an organic semiconductor layer arranged on or above the substrate; and an n-type inorganic transistor including an inorganic semiconductor layer arranged on or above the organic transistor, wherein a channel region of the inorganic transistor overlaps a channel region of the organic transistor at least partially in a plan view.

Abstract: An electro-optical device which has a program period, a light-emitting period, an erasing period, and a lights-off period in one frame and controls the light-emitting period according to a light emission gray-scale level including a driving transistor that includes a current control terminal, a current input terminal, and a current output terminal, and controls a current amplifying ratio on the basis of a voltage between the current control terminal and the current input terminal, an electro-optical element that is supplied with the driving current from the driving transistor to emit light, a storage capacitor that stores the charge corresponding to the voltage between the current control terminal and the current input terminal of the driving transistor, a constant current source that outputs a constant current that is independent of the light emission gray-scale level, a voltage source that outputs a driving stop signal that turns off the driving transistor, a selection transistor that opens/closes a current