Abstract: Provided is an agent for promoting root nodule formation, which contains cinnamic acid or hydroxycinnamic acid as an active ingredient.

Abstract: A neural network includes first electrode lines in parallel, second electrode lines in parallel, a ferroelectric layer, neuron circuits, a first direction control circuit, and a second direction control circuit. The second electrode lines extend in a direction different from the first electrode lines. The ferroelectric layer is arranged between the first electrode lines and the second electrode lines. The neuron circuits are provided in the first electrode lines, respectively. The first direction control circuit is connected between the neuron circuits and the first electrode lines. The second direction control circuit is connected between the neuron circuits and the second electrode lines. The first electrode lines and the second electrode lines are capacitively coupled to form synapse devices at intersections in a plan view, each of the intersections being a portion where a first electrode line and a second electrode line intersect with each other.

Abstract: Provided is a memristor that can be manufactured at a low temperature, and does not include metals of which resources might be depleted. This memristor includes a first electrode, a second electrode, and a memristor layer of an oxide having elements of Ga, Sn, and oxygen, disposed between the first electrode and the second electrode. When voltage is applied to the first electrode with respect to the second electrode, the voltage being positive or negative, a current flows; when voltage of a data-set voltage value is applied, a state is transitioned from a high-resistance state to a low-resistance state; and when voltage of a data-reset voltage value that is of an opposite sign to that of the data-set voltage value is applied, the state is transitioned from a low-resistance state to a high-resistance state.

Abstract: With the use of nucleotide sequence data concerning transcription products, transcriptome analysis is performed with higher precision. Concerning a plurality of data sets including the objective variable data and the gene expression level data, a plurality of subdata sets are generated by randomly deleting the gene expression level data, and the method of regularization is applied to the plurality of subdata sets to calculate relevant estimation formulae and then generate the lists of genes included in the estimation formula.

Abstract: A method includes the steps of performing a coating or printing of ink for producing a compound semiconductor thin film so as to form a compound semiconductor coating film, the ink including 50% by mass or more of amorphous compound nanoparticles, mechanically applying a pressure to the compound semiconductor coating film, and subjecting the compound semiconductor coating film to a heat-treatment to form a compound semiconductor thin film.

Abstract: An oxide film according to this invention is a film of an oxide (possibly including inevitable impurities) containing silver (Ag) and nickel (Ni). This oxide film is an aggregate of microcrystals, an amorphous form including microcrystals, or an amorphous form and has p-type conductivity, which exhibits no clear diffraction peak with the XRD analysis, as seen in a chart in FIG. 3 indicating X-ray diffraction (XRD) analysis results of a first oxide film and a second oxide film. This oxide film achieves a broader bandgap than that of a conventional oxide film as well as high p-type conductivity. This oxide film is an aggregate of microcrystals, an amorphous form containing microcrystals, or an amorphous form as described above, and is thus easily formed on a large substrate and is suitable also for industrial production.

Abstract: A semiconductor device includes: a substrate; a p-type organic transistor including an organic semiconductor layer arranged on or above the substrate; and an n-type inorganic transistor including an inorganic semiconductor layer arranged on or above the organic transistor, wherein a channel region of the inorganic transistor overlaps a channel region of the organic transistor at least partially in a plan view.

Abstract: One oxide film of the present invention is a film of an oxide (which can contain incidental impurities) containing one transition element selected from the group consisting of niobium (Nb) and tantalum (Ta) and copper (Cu). The oxide film is an aggregate of microcrystals, an amorphous form including microcrystals or an amorphous form, which shows no clear diffraction peak in an XRD analysis and has p-type conductivity as shown in the chart of FIG. 5 showing the results of XRD (X-ray diffraction) analyses of a first oxide film and a second oxide film. According to this oxide film, p-type conductivity higher than that of a conventional oxide film is obtained. This oxide film is an aggregate of microcrystals, an amorphous form containing microcrystals or an amorphous form, is consequently easily formed on a large substrate, and is therefore suitable also for industrial production.

Abstract: A semiconductor device includes: a substrate; a p-type organic transistor including an organic semiconductor layer arranged on or above the substrate; and an n-type inorganic transistor including an inorganic semiconductor layer arranged on or above the organic transistor, wherein a channel region of the inorganic transistor overlaps a channel region of the organic transistor at least partially in a plan view.

Abstract: An electro-optical device which has a program period, a light-emitting period, an erasing period, and a lights-off period in one frame and controls the light-emitting period according to a light emission gray-scale level including a driving transistor that includes a current control terminal, a current input terminal, and a current output terminal, and controls a current amplifying ratio on the basis of a voltage between the current control terminal and the current input terminal, an electro-optical element that is supplied with the driving current from the driving transistor to emit light, a storage capacitor that stores the charge corresponding to the voltage between the current control terminal and the current input terminal of the driving transistor, a constant current source that outputs a constant current that is independent of the light emission gray-scale level, a voltage source that outputs a driving stop signal that turns off the driving transistor, a selection transistor that opens/closes a current