Patents Assigned to S.H.I. Examination & Inspection Ltd
  • Method for manufacturing a semiconductor device
    Publication number: 20020031889
    Abstract: The present invention provides a method for manufacturing a semiconductor device having a junction area formed by doping with a first conductive and a second conductive dopant. According to the method of the present invention, a surface of the semiconductor device is irradiated by electron beams or charged particles having energy of 100 to 500 keV. After the irradiation by electron beams or charged particles, annealing in a hydrogen atmosphere is performed for the irradiated semiconductor device.
    Type: Application
    Filed: September 28, 2001
    Publication date: March 14, 2002
    Applicant: S.H.I. Examination & Inspection Ltd
    Inventors: Yoshiaki Nishihara, Jungyol Jo