Abstract: An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microstructure on the detached surface of the carrier substrate by depositing an epitaxial layer on the detached surface of a carrier substrate. Also included is a heteroepitaxial microstructure fabricated from such method.
Type:
Grant
Filed:
June 24, 2005
Date of Patent:
October 30, 2007
Assignee:
S.O.I.Tec Silicon on Insulator Technolgoies
Inventors:
Bruce Faure, Fabrice Letertre, Bruno Ghyselen