Abstract: Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film, an etch stop film, a phase shift film, and a hard mask film which are sequentially formed on a substrate. The phase shift film contains ruthenium (Ru), and the etch stop film contains chrome (Cr) and niobium (Nb). In the etch stop film, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) ranges from 10 to 40 at %. The hard mask film contains tantalum (Ta) and oxygen (O). The content of tantalum (Ta) in the hard mask film is higher than or equal to 50 at %. With the blankmask, it is possible to implement a high resolution and NILS during wafer printing, and implement DtC.

Abstract: The blank mask for EUV lithography has a structure in which a reflective film, a capping film, an absorber film, and a hard mask film are sequentially stacked on a substrate. The hard mask film is formed of a material containing chromium (Cr), niobium (Nb), oxygen (O), and nitrogen (N), allowing sufficient etching speed to be obtained even using only chlorine-based etching gas without oxygen (O2). Accordingly, damage to the resist film caused by oxygen (O2) is prevented, and damage to the capping film is prevented since the capping film is not exposed to oxygen (O2) during the process of removing the hard mask film.

Abstract: Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film and a phase shift film which are sequentially formed on a substrate. The phase shift film includes a first layer containing niobium (Nb) and chrome (Cr), and a second layer containing tantalum (Ta) and silicon (Si). In the first layer, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) content ranges from 10 to 40 at %. The blankmask can implement an excellent resolution and NILS, and implement a low DtC.

Abstract: The reverse photomask functions such that the hole pattern of the photomask acts as a shading pattern, and the dot pattern functions as a reflection pattern. The reverse blankmask for manufacturing a reverse photomask has a reflective film formed on the substrate, and a phase shift film formed on the reflective film. The phase shift film exceeds a relative reflectivity of 15% for EUV exposure light at a wavelength of 13.5 nm, has a phase shift amount of 110-150° or 220-250°, and has a thickness of less than 45 nm. When using the reverse photomask to expose a wafer applied with negative photoresist, the hole and dot patterns of the photomask respectively form hole and dot patterns on the wafer.

Abstract: A frame assembly for mounting a pellicle on a photomask is disclosed. The frame assembly includes a frame to which the pellicle is attached, a stud attached to the photomask, and a fixture that is inserted into the lower side of the frame. The stud and the fixture are magnetically bonded to each other, and a gap of a certain height is created between the photomask and the frame by the stud under the fixture. This eliminates the need for precise alignment of the frame during the mounting process on the photomask, and facilitates the separation of the frame from the photomask for reuse. The formation of the gap eliminates the need for a separate process to create vent holes in the frame.

Abstract: Blankmasks for EUV lithography are equipped with a reflective film formed on the substrate, a capping film formed on the reflective film, and an absorption film formed on the capping film. The absorption film includes chromium (Cr) 30˜60 at %, antimony (Sb) 40˜70 at %, and nitrogen (N) 0˜20 (at %). Thinning of the absorption film thickness is possible, resulting in a reduction of the 3D effect, and improvements in Dose to Space (DtS) and Normalized Image Log Slope (NILS).

Abstract: Disclosed is a blankmask for EUV lithography. The blankmask has a reflective film formed on a substrate, a capping film containing ruthenium (Ru), an etch stop film containing tantalum (Ta) and antimony (Sb), and a phase shift film containing ruthenium (Ru). The etch stop film has a composition ratio of tantalum (Ta) and antimony (Sb) ranging from 3:7 to 7:3. The stacked structure of the phase shift film containing ruthenium (Ru) and the etch stop film containing tantalum (Ta) and antimony (Sb) results in achieving a high extinction coefficient (k) and a low refractive index (n).

Abstract: Blankmask for EUV lithography has a reflective film formed on a substrate and an absorbing film formed on the reflective film. The absorbing film contains tantalum (Ta) and antimony (Sb). The absorbing film has a composition ratio of Ta:Sb=2:8˜6:4 at %. The absorbing film with a high extinction coefficient (k) allows for the thin film deposition of the absorbing film, reducing the Shadowing Effect and 3D Effect.

Abstract: Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film and a phase shift film which are sequentially formed on a substrate. The phase shift film includes a first layer containing niobium (Nb) and chrome (Cr), and a second layer containing tantalum (Ta) and silicon (Si). In the first layer, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) content ranges from 10 to 40 at %. The blankmask can implement an excellent resolution and NILS, and implement a low DtC.

Abstract: Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film, an etch stop film, a phase shift film, and a hard mask film which are sequentially formed on a substrate. The phase shift film contains ruthenium (Ru), and the etch stop film contains chrome (Cr) and niobium (Nb). In the etch stop film, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) ranges from 10 to 40 at %. The hard mask film contains tantalum (Ta) and oxygen (O). The content of tantalum (Ta) in the hard mask film is higher than or equal to 50 at %. With the blankmask, it is possible to implement a high resolution and NILS during wafer printing, and implement DtC.

Abstract: A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: A blankmask for extreme ultraviolet lithography includes a substrate, a reflective layer formed on the substrate, and a phase shift layer formed on the reflective layer. The phase shift layer contains niobium (Nb), and is made of a material containing one of tantalum (Ta), chromium (Cr), and ruthenium (Ru). A phase shift layer containing Nb and Ta has a relative reflectance of 5 to 20%, a phase shift layer containing Nb and Cr has a relative reflectance of 9 to 15%, and a phase shift layer containing Nb and Ru has a relative reflectance of 20% or more. The phase shift layer has a phase shift amount of 170 to 230°, and has a surface roughness of 0.5 nmRMS or less. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: The pellicle has a pellicle portion that allows transmission of EUV exposure light. The pellicle portion comprises a heat radiation layer for radiating heat generated by irradiation of EUV exposure light. The heat radiation layer comprises metal and silicon, and the metal content of the heat radiation layer is greater than the silicon content. This ensures a high transmittance of 90% or more, while improving the heat radiation performance of the pellicle portion, so that it can be applied to EUV exposure light powers of 600 W or more.

Abstract: Disclosed is a blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The reflection film has a structure in which a pair including a first layer made of Ru or a Ru compound in which one or more of Mo, Nb, and Zr are added to Ru, and a second layer made of Si is stacked plural times. Interdiffusion between the respective layers constituting the reflection film is suppressed.

Abstract: A blankmask for extreme ultraviolet lithography includes a reflection film, a capping film, and an absorbing film that are sequentially formed on a transparent substrate, in which the reflection film has a surface roughness of 0.5 nm Ra or less. It is possible to prevent footing of an EUV photomask pattern from occurring, improving flatness of an EUV blankmask, and prevent oxidation and defects of a capping film.

Abstract: A blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The reflection film includes at least one Mo/Si layer that includes a Mo layer and a Si layer, and at least one Ru/Si layer that includes a Ru layer and a Si layer. Interdiffusion between the respective layers forming the reflection film is suppressed in a blankmask for EUV having a reflection film. Accordingly, the reflectance of the blankmask is improved, and the decrease in reflectance due to use after the manufacturing is prevented, thereby extending the life of the photomask.

Abstract: A blankmask for extreme ultraviolet lithography includes a substrate, a reflective layer formed on the substrate, and a phase shift layer formed on the reflective layer. The phase shift layer contains niobium (Nb), and is made of a material containing one of tantalum (Ta), chromium (Cr), and ruthenium (Ru). A phase shift layer containing Nb and Ta has a relative reflectance of 5 to 20%, a phase shift layer containing Nb and Cr has a relative reflectance of 9 to 15%, and a phase shift layer containing Nb and Ru has a relative reflectance of 20% or more. The phase shift layer has a phase shift amount of 170 to 230°, and has a surface roughness of 0.5 nmRMS or less. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: The disclosure relates to a half-toned attenuated shift blankmask for extreme ultraviolet lithography including: a reflective film, a capping film, a first etch stop film, a phase shift film, a second etch stop film, and an absorbing film that are sequentially provided on a transparent substrate. The phase shift film has a high reflectance of 20% or more, so characteristics of NILS and MEEF are improved during wafer printing.

Abstract: A blankmask includes a hard film and a light-shielding film formed on a transparent substrate. The hard film is made of a silicon compound that contains at least one of oxygen, nitrogen and carbon in addition to silicon. There are provided a blankmask and a photomask improved in resolution, desired critical dimension (CD), and process window margin. Thus, it is possible to manufacture a blankmask and a photomask of good quality when a pattern of 32 nm or below, in particular, 14 nm or below is formed.