Abstract: Disclosed is a high-speed circuit in which a basic cell includes a high-speed first transistor and a high-speed second transistor. Both the first and second transistors have high gain-bandwidth products. The second transistor is a unipolar (field-effect) device which is connected in a cascode configuration with the first transistor. The unipolar device functions to control the operating point of the first transistor over a range from "on" to "off" as a function of the unipolar device operating at a point over the range from "on" to "off". The unipolar device is controlled by an input voltage signal applied to its gate.