Abstract: An optical subassembly includes: a TSV submount layer carrying an active optical component and a sandwich cap bonded to the TSV submount layer. The sandwich cap includes a bottom spacer layer disposed above the TSV submount layer, a glass layer above the bottom spacer layer, and an upper spacer layer above the glass layer. A cavity is defined in the bottom spacer layer and configured for accommodating the active optical component. At least one first lens is formed on the glass layer and is opposite to the active optical component. An alignment feature is formed in the upper spacer layer.

Abstract: An optical connector includes a lens block mounted in a MPO housing and optically coupled between an optical light guide and an external coupling light guide. A first lens formed on a first surface of the lens block to totally reflect and collimate light emitting from the optical light guide to a second surface. The second surface is coated with a partial transmission coating on a transmitter side and a total reflective coating on a receiver side. A second lens formed on a third or fourth surface on the lens block for focusing light from the second surface onto the external coupling light guide.

Abstract: A thin-film piezoelectric material element includes a laminated structure part having a lower electrode film, a piezoelectric material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric material film. The thin-film piezoelectric material element includes a surface layer insulating film disposed on side surfaces of the laminated structure part, a first top surface of the upper electrode film and a second top surface of the lower electrode film, and has a first through hole formed on a first top disposed part and a second through hole formed on a second top disposed part. Further, the surface layer insulating film has an upper electrode pad being in directly contact with a first inside exposed surface and a lower electrode pad being in directly contact with a second inside exposed surface.

Abstract: An embodiment provides a 850 nm VCSEL transmitter that includes an active region having: one or more quantum wells having InGaAs material; and two or more quantum well barriers having AlGaAs or GaAsP materials adjacent to the one or more quantum wells. An in-phase or anti-phase, step or ring surface relief structure depth control is made on either (i) the topmost GaAs surface/contact layers by either dry or wet etching, or (ii) with the help of PECVD made thin SiN layer made on GaAs layer with wet etching for tunable static and dynamic characteristics such as output power, slope efficiency, and resonance oscillation bandwidth, photon lifetime through its damping, rise/fall times of eye-opening, over shooting, and jitter respectively. Moreover, anti-phase surface relief structure diameter control can be made on the topmost GaAs step surface/contact, or SiN ring layers for filtering of higher order modes and reduction of spectral line width.

Abstract: An apparatus for forming electrical solder connections in a disk drive unit includes: a nozzle device for carrying out soldering on two pre-welding surfaces; a solder ball feeding device for transferring a single solder ball to the nozzle device; a gas pump device for supplying pressurized gases to the nozzle device; a laser device for emitting laser beams to the solder ball; and a control device including at least one sensor for at least detecting status of the solder ball or pressure in the nozzle device or distance between the nozzle device and the pre-welding surfaces, and a control unit connected with the at least one sensor. The present invention can easily control the solder ball, the pressurized gases and the laser beams, thereby keeping the pressure of the nozzle device and the laser energy stable and, in turn improving the soldering result.

Abstract: A memory device has a laminated chip package and a controller chip. In the laminated chip package, a plurality of memory chips are laminated. An interposed chip is laminated between the laminated chip package and the controller chip. The memory chips have a plurality of first wiring electrodes. The interposed chip has a plurality of second wiring electrodes. The second wiring electrodes are formed with a common arrangement pattern common with an arrangement pattern of a plurality of wiring electrodes for controller which are formed in the controller chip. The controller chip is laid on the interposed chip.

Abstract: A manufacturing method of a write portion for a thermally assisted magnetic head slider includes providing a write portion including a write element, a waveguide, and a plasmon unit; lapping opposed-to-magnetic recording medium surfaces of the write element and the waveguide, and an near-field light generating surface of the plasmon unit; only forming a carbon layer on the opposed-to-magnetic recording medium surface of the write element. Corrosive elements in the write portion can be prevented from being corroded and the write element can be prevented from being worn and abraded not only, stable thermal ability for a plasmon unit can be maintained but also.

Abstract: A wafer-level packaged optical subassembly includes: a substrate element, the substrate element including a top layer and a base layer being bonded with the top layer; a top window cover being bonded with the top layer of the substrate element; and a plurality of active optoelectronic elements disposed within the substrate element. At least one primary cavity is defined in the substrate element by the top layer and the base layer, and configured for accommodating the active optoelectronic elements. A plurality of peripheral cavities are defined around the at least one primary cavity as alignment features for external opto-mechanical parts.

Abstract: A CWDM transceiver module includes: a substrate; a plurality of light sources disposed on the substrate; a spacer layer disposed above the substrate, a cavity being defined in the space layer to accommodate the light sources; a cap layer transparent to light emitted from the light sources and disposed on the spacer layer, a notch for assembling a waveguide being formed in the cap layer; a plurality of lenses disposed on the cap layer facing the light sources; reflector coating and filter coating disposed on surfaces of the cap layer; an active alignment element disposed on the cap layer; and a reflector disposed at bottom of the notch.

Abstract: A thermal assisted magnetic recording head has a magnetic head slider and a light source unit that is fixed to the magnetic head slider. A first surface of the light source unit and a second surface of the magnetic head slider face each other via a gap. The light source unit includes a light source that emits laser light from an emission part that is positioned on the first surface and a photodetector that detects the laser light. The magnetic head slider includes a waveguide through which the laser light that is incident on an incident part positioned on the second surface propagates, near-field light generation means for generating near-field light on an air bearing surface, the near-field light being generated from the laser light that propagates through the waveguide, and a recording magnetic pole that is provided adjacent to the near-field light generation means and that has an end part positioned on the air bearing surface.

Abstract: A method of manufacturing an electronic device includes a positioning step of positioning a first member supporting a laser diode with respect to a second member having a waveguide, a bonding step of bonding the first member and the second member together, and a checking step of checking the accuracy of positioning of the first member with respect to the second member. In the positioning step, the laser diode is energized to allow laser light to be emitted, and the laser light is allowed to be incident on the incidence end of the waveguide. In the bonding step, a bonding material is melted by irradiating the first member with heating light while the laser diode is not energized. In the checking step, the laser diode is energized again.

Abstract: A thin-film piezoelectric material element includes a laminated structure part having a lower electrode film, a piezoelectric material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric material film. The thin-film piezoelectric material element includes a surface layer insulating film disposed on side surfaces of the laminated structure part and a top surface of the upper electrode film, and has a through hole formed on a top disposed part disposed on the top surface. The surface layer insulating film has a long-side disposed part disposed outside than the top disposed part, the long-side disposed part has a long-side width, along with the long-side direction, formed shorter than the through hole.

Abstract: An optical engine for data communication includes a substrate, an array of optical semiconductor devices mounted on the substrate, a device lens block mounted on the substrate and formed with a cavity for accommodating the array of optical semiconductor devices, a jumper lens block coupled with the device lens block at an upper surface thereof, and a fiber array mounted on the jumper lens block and optically coupled with the array of optical semiconductor devices. The jumper lens block is aligned with the device lens block by alignment posts and notches. A metal latch is used to hold the jumper lens block on the device lens block.

Abstract: A power monitoring device includes: a silicon support layer being attached to a PCB board; a glass layer disposed above the silicon support layer; at least one sensing element disposed on the glass layer; and at least one metal pad disposed on the glass layer. The sensing element is suspended over a laser element that is attached to the PCB board and configured for sensing light directed thereto that is emitted by the laser element. A cavity is defined in the silicon support layer and configured for accommodating the laser element. A transmitter that includes the power monitoring device is also provided.

Abstract: An optical transmitter module includes a coupling optical element configured to couple a first optical signal from a transmitting optoelectronic component to a first light guiding structure. An optical power monitor system is connected with the first light guiding structure and is provided with a beam splitter for splitting the first optical signal into a transmitted optical signal and a reflected optical signal to be directed to a receiving optoelectronic component for measuring power of the reflected optical signal.

Abstract: A light source unit has a substrate, a light source that is mounted to the substrate. The light source includes; a first emission part that emits a forward light, the forward light being a laser light in an oscillation state; a second emission part that is located on a side opposite to the first emission part and that emits a rearward light, the rearward light being a laser light in an oscillation state; and a light leakage part located at a position different from the first emission part and the second emission part. The light source further includes a photodetector that is provided on the substrate, wherein the photodetector has a light receiving surface for detecting a leakage light that leaks from the light leakage part.

Abstract: A semiconductor light-emitting element includes: a double-mesa structure of semiconductor formed to have a cylindrical cross section; an insulating member formed to fill a space surrounding the double-mesa structure, with the insulating member comprising a lower insulating member and an upper insulting member covering the lower insulating member; and a first electrode formed on the upper insulating member to come into contact with part of a top surface of the double-mesa structure. The lower insulating member has multiple lower air pillars that are formed in an area aligning with the first electrode, and the upper insulating member has multiple upper air pillars that are formed around the first electrode. It has low dielectric constant and reduced electrical parasitics especially parasitic capacitances, thereby improving high frequency performance and improving modulation speed of light-emitting device finally.

Abstract: A semiconductor laser apparatus includes a silicon-on-insulator assembly and an edge-emitting semiconductor laser assembly integrated on the silicon-on-insulator assembly. The silicon-on-insulator assembly includes an optical waveguide at the top which is bonded to the edge-emitting semiconductor laser assembly and configured to couple a laser light emitted from the edge-emitting semiconductor laser assembly, and the optical waveguide includes a core portion located in the middle of the optical waveguide; and at least one vertical rib configured on two sides of the core portion respectively, with a width narrower than that of the core portion. The apparatus obtains a single mode laser operation and has low propagation loss and high mechanical bond strength.

Abstract: A thin film piezoelectric element of the present invention includes a substrate and a piezoelectric thin film stack formed on the substrate. The piezoelectric thin film stack includes a top electrode layer, a bottom electrode layer and a piezoelectric layer sandwiched between the top electrode layer and the bottom electrode layer, wherein the piezoelectric layer includes a first piezoelectric layer and a second piezoelectric layer whose compositions have different phase structures. The present invention can obtain high piezoelectric constants, enhanced coercive field strength and good thermal stability, thereby enabling larger applied field strength without depolarization and achieving a large stroke for its applied device.

Abstract: A VCSEL according to the invention, configured to emit a light having about 850 nm wavelength, comprises an active region which comprises one or more InxGa1-xAs quantum wells; two or more GaAs1-yPy barriers bonding to the one or more quantum wells; and x ranges from 0.05 to 0.1, and y ranges from 0.2 to 0.29. The VCSEL has increased optical confinement and high transmission speed, good reliability characteristics, high-temperature performance, and long life time.