Abstract: A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.
Type:
Grant
Filed:
April 15, 2003
Date of Patent:
November 30, 2004
Assignee:
Saint-Goban Ceramics & Plastics, Inc.
Inventors:
Andrew G. Haerle, Richard F. Buckley, Richard R. Hengst