Abstract: The present invention is directed to the production of high quality semi-conductor devices created at speeds and in sizes that far exceed current x-ray lithography capabilities.
Type:
Grant
Filed:
June 7, 2001
Date of Patent:
January 18, 2005
Assignee:
SAL, Inc.
Inventors:
Robert Allen Selzer, Franz Ludwig Rauch, Heinz Siegert, Klaus Simon, William Rudolf Friml, Joe Baker Gagnon, Robert Harrison Macklin