Abstract: A semiconductor device having a field effect transistor and a method of forming the same are provided. The semiconductor device preferably includes a device active pattern disposed on a predetermined region of the substrate. The gate electrode preferably crosses over the device active pattern, interposed by a gate insulation layer. A support pattern is preferably interposed between the device active pattern and the substrate. The support pattern can be disposed under the gate electrode. A filling insulation pattern is preferably disposed between the device active pattern and the filling insulation pattern. The filling insulation pattern may be disposed under the source/drain region. A device active pattern under the gate electrode is preferably formed of a strained silicon having a lattice width wider than a silicon lattice.
Type:
Grant
Filed:
June 18, 2007
Date of Patent:
March 31, 2009
Assignee:
SAms Samsung Electronics Co., Ltd.
Inventors:
Chang-Woo Oh, Dong-Gun Park, Dong-Won Kim, Jeong-Dong Choe