Abstract: A semiconductor device includes a reference voltage generator configured to output a reference voltage. The reference voltage generator includes a boosting code circuit and a first digital-analog converter (DAC). The boosting code circuit includes a first boosting pulse generator configured to generate a first boosting pulse and a first boosting code controller configured to output a first boosting code based on a reference code and the first boosting pulse. The first DAC is configured to output the reference voltage by converting the first boosting code. The first boosting code has a first code value different from the reference code when the first boosting pulse has a first logic level, and the first boosting code has the same value as the reference code when the first boosting pulse has a second logic level opposite to the first logic level.

Abstract: A method of generating a fin of a FinFET includes depositing a first hard mask layer on or above a first dummy gate and a second dummy gate, generating first spacers and second spacers by etching the first hard mask layer, removing only the first spacers, depositing a second hard mask layer, generating third spacers and fourth spacers by etching the second hard mask layer, removing the first dummy gate and the second dummy gate, generating first fins using the third spacers, and generating second fins using the second spacers and the fourth spacers.

Abstract: Optical measuring systems for measuring geometrical parameters of nano-objects and methods of measuring a critical size (CS) are provided. The optical method of measuring the CS includes selecting parameters of an optic scheme and an illumination condition; recording a set of nanostructure images corresponding to various wavelengths with various defocusing levels of scattered radiation; calculating a plurality of sets of images of a nanostructure with various defocusing levels, corresponding to various wavelengths of the scattered radiation with CS values within a known range; and comparing a set of measured images of the nanostructure with the sets of the calculated images and determining a best approximate value of the CS values.

Abstract: The present invention relates to a simulation method and device. According to the present invention, a simulation method using a plurality of blocks comprises: a dividing step of dividing a simulation into computation operations for performing unique operations on the blocks and communication operations for data exchanges between different blocks; a grouping step of performing a grouping between the interdependent computation and communication operations; and a simulation performing step of performing an operation included in each group using the blocks according to whether or not the level of interdependency between the computation and communication operations is resolved.