Abstract: A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.
Type:
Grant
Filed:
March 17, 2006
Date of Patent:
December 29, 2009
Assignee:
Samsung Elecctronics Co., Ltd.
Inventors:
In-Gyu Baek, Moon-Sook Lee, Dong-Chul Kim