Patents Assigned to SAMSUNG ELECTGRONICS CO., LTD.
  • Publication number: 20070120606
    Abstract: A base station power amplifier for minimizing memory effect is provided. The power amplifier includes a bias circuit which supplies a direct current (DC) power to a transistor; the transistor which amplifies the DC power provided from the bias circuit; a matching circuit which transfers maximum power to a load by reducing loss of the power amplified by the transistor; and a large capacitor which lies between the matching circuit and the transistor, reduces a low-frequency second harmonic voltage by electrically connecting directly to the matching circuit, and has a preset capacitance value.
    Type: Application
    Filed: November 13, 2006
    Publication date: May 31, 2007
    Applicants: SAMSUNG ELECTGRONICS CO., LTD., POSTECH ACADEMY-INDUSTRY FOUNDATION
    Inventors: Jong-Sung Lee, Keun-Hyo Song, Han-Seok Kim, Sei-Jei Cho, Joong-Ho Jeong, Bumman Kim, Jeonghyeon Cha