Abstract: A base station power amplifier for minimizing memory effect is provided. The power amplifier includes a bias circuit which supplies a direct current (DC) power to a transistor; the transistor which amplifies the DC power provided from the bias circuit; a matching circuit which transfers maximum power to a load by reducing loss of the power amplified by the transistor; and a large capacitor which lies between the matching circuit and the transistor, reduces a low-frequency second harmonic voltage by electrically connecting directly to the matching circuit, and has a preset capacitance value.
Type:
Application
Filed:
November 13, 2006
Publication date:
May 31, 2007
Applicants:
SAMSUNG ELECTGRONICS CO., LTD., POSTECH ACADEMY-INDUSTRY FOUNDATION
Inventors:
Jong-Sung Lee, Keun-Hyo Song, Han-Seok Kim, Sei-Jei Cho, Joong-Ho Jeong, Bumman Kim, Jeonghyeon Cha