Patents Assigned to Samsung Electrionics Co., Ltd.
  • Patent number: 10908019
    Abstract: Present invention provides a spectrometer including a first unit spectral filter configured to absorb or reflect light in a part of a wavelength band of a light spectrum of an incident target, a second unit spectral filter configured to absorb or reflect light in a wavelength band different from the part of the wavelength band, a first light detector configured to detect a first light spectrum passing through the first unit spectral filter, a second light detector configured to detect a second light spectrum passing through the second unit spectral filter, and a processing unit configured to perform a function of restoring a light spectrum of the target incident from spectra of light detected from the first light detector and the second light detector.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: February 2, 2021
    Assignee: Samsung Electrionics Co., Ltd.
    Inventors: Kyeong Seok Lee, Won Mok Kim, Gyu Weon Hwang, In Ho Kim, Wook Seong Lee, Doo Seok Jeong
  • Publication number: 20110047233
    Abstract: In a Converged IP Messaging (CPM) service, an arbitrary terminal generates a message based on a user input, and transmits the message to a CPM server. Upon receiving the message, the CPM server requests a presence server to provide presence information corresponding to a recipient of the message. The presence server searches for presence information corresponding to the recipient in response to the request of the CPM server, and transmits the searched presence information to the CPM server. Based on the transmitted presence information, the CPM server decides to perform interworking for the message, decides a type of a messaging service for interworking, and transmits the message to an Interworking Function (IWF) according to the decided type of the messaging service. The IWF receives the message, converts the message according to the decided messaging service, and transmits the converted message to the recipient.
    Type: Application
    Filed: February 13, 2009
    Publication date: February 24, 2011
    Applicant: SAMSUNG ELECTRIONICS CO., LTD.
    Inventors: Sung-Jin Park, Kyung-Tak Lee, Seung-Yong Lee, Ji-Hye Lee, Wuk Kim
  • Publication number: 20090218797
    Abstract: An airbag having a venting device defined by an upper part surrounding the venting opening (25) and a lower part (13) separated by a separating element (15), configuring a chamber (21) in which the lower part (13) has a closing element (31, 33, 35, 37) in its central part opposite the venting opening (25) and includes a plurality of openings (41, 43, 45, 47) to receive the gas from the bag, said closing element being able to totally or partially close the venting opening (25) when the inner pressure of the bag (23) exceeds predetermined limits (P2, P3).
    Type: Application
    Filed: June 24, 2005
    Publication date: September 3, 2009
    Applicant: SAMSUNG ELECTRIONICS CO., LTD
    Inventor: Azucena Perez Garcia
  • Patent number: 7337263
    Abstract: A method of and apparatus for varying a recording density of a data storage system. The method includes setting a range of a region whose recording density is to be changed, judging whether a region in which data read and write commands are to be executed is within the set range, and performing data read and write operations by allocating only one data among a plurality of continuous tracks as a data track if the region in which the data read and write commands are to be executed is within the set range.
    Type: Grant
    Filed: November 9, 2005
    Date of Patent: February 26, 2008
    Assignee: Samsung Electrionics Co., Ltd.
    Inventors: Sung-youn Cho, Seung-youl Jeong, Jong-lak Park
  • Publication number: 20020140033
    Abstract: A method of forming a SOI type semiconductor device comprises forming a first trench in a SOI layer forming a portion of an isolation layer region between an element region and a ground region by etching the SOI layer of a SOI type substrate using an etch stop layer pattern as an etch mask, forming an impurity layer in or on a bottom surface of the first trench, forming a second trench exposing a buried oxide layer in the SOI layer in the remainder of the isolation layer region except the portion thereof between the element region and the ground region, and forming an isolation layer by depositing an insulation layer over the SOI substrate having the first and second trenches. The impurity layer can be formed by depositing a SiGe single crystal layer in the bottom surface of the first trench. Also, the impurity layer can be formed by implanting ions in the bottom surface of the first trench.
    Type: Application
    Filed: January 2, 2002
    Publication date: October 3, 2002
    Applicant: Samsung Electrionics Co., Ltd.
    Inventors: Geum-Jong Bae, Nae-In Lee, Hee-Sung Kang, Yun-Hee Lee
  • Publication number: 20020104049
    Abstract: According to various aspects and embodiments of this invention, a semiconductor device having many pins can effectively be tested using a test system having fewer pins. A semiconductor device test system and method are provided to effectively test a semiconductor device having many pins. The test system includes a pin electronics (PE) card and a pattern memory. The PE card preferably includes a plurality of comparator and driver units, wherein each comparator and driver unit can include a driver for driving a predetermined input signal pattern to be applied to an input pin of the semiconductor device and a comparator for comparing data output from an output pin of the semiconductor device with a predetermined output signal pattern. Some or all of the pins of the semiconductor device are divided into pin groups having K number of pins.
    Type: Application
    Filed: October 30, 2001
    Publication date: August 1, 2002
    Applicant: Samsung Electrionics CO., Ltd.
    Inventors: Heon-Deok Park, Sang-Bae An, Jae-Kuk Jeon