Abstract: A method of manufacturing a semiconductor device package includes forming a patterned photoresist film with windows for exposing a plurality of connection bump areas on a conductive substrate, forming metal plating layers on the connection bumps area using the photoresist film, and forming first gold plating layers on the metal plating layers. The metal plating layers prevent the diffusion of the first gold plating layers into the conductive substrate. According to the method, high-qualified conductive layers are formed on the connection bumps by a simplified manufacturing process. Further, connection bumps having an upper part in an almost hemispherical shape are formed on the first gold plating layers, thereby improving the reliability of the semiconductor device package.

Abstract: A dielectric ceramic composition, a multi-layer ceramic capacitor using it and a manufacturing method therefor are disclosed, in which the dielectric properties are superior. The ceramic capacitor includes a chip having a plurality of dielectric layers 2, a plurality of internal electrodes 3 stacked alternately with the dielectric layers, and a pair of outer electrodes 4 formed on both sides of the chip, the composition of dielectric layers comprising: 100 moles of barium calcium titanate BaCaxTiO3(0.001≦x≦0.02), 0.5-4 moles of MgO, 0.01-0.5 moles of MnO, 0.1-2 moles of BaO, 0.1-2 moles of CaO, 1-4 moles of SiO2, and 0.1-3 moles of at least one or more compounds selected from the group consisting of Y2O3, Dy2O3, Ho2O3 and Er2O3. The capacitor thus manufactured satisfies the X7R standard has superior dielectric properties, and the deviations of the dielectric properties are extremely low, thereby ensuring a high reliability.