Abstract: A stretchable panel includes a stretchable substrate including a first elastomer having a first elastic modulus, a non-stretchable pattern covering a portion of the stretchable substrate and including a particular material that includes an organic, inorganic, or organic-inorganic material, the particular material having a second elastic modulus higher than the first elastic modulus, a plurality of unit elements arranged on the non-stretchable pattern, a plurality of pixel circuits configured to independently operate separate, respective unit elements, a connection electrode configured to electrically connect each of the unit elements and each of the pixel circuits, and an elastic structure overlapped with an edge portion of the non-stretchable pattern along a thickness direction of the stretchable substrate and comprising a second elastomer having a third elastic modulus higher than the first elastic modulus and lower than the second elastic modulus, and an electronic device including the same.

Abstract: Disclosed is a refrigerator including an ultrathin wall type insulating wall having a reduced thickness while maintaining insulating performance, so as to increase the capacity of a storage chamber. A vacuum insulating material is disposed inside the insulating wall so as to ensure the insulating performance of the insulating wall, and a foam material, in the portion in which the vacuum insulating material is not disposed, is disposed to be thicker than a foam material in the portion in which the vacuum insulating wall is disposed, such that the insulating wall, which maintains insulating performance while maintaining the insulating wall having an overall ultrathin shape, can be formed.

Abstract: A method of forming an interconnection by using a landing pad is disclosed. In a semiconductor device having a memory cell portion and a peripheral circuit portion, a refractory metal is used for the bitline instead of the usual polycide, to concurrently form a contact on an active region of an N-type and a P-type substrate. A landing pad is formed on the peripheral circuit portion at the same time as a bitline is formed on the memory cell portion. In such a process, a substantial contact hole for the interconnection is formed on the landing pad so that an aspect ratio of the contact can be lowered. Accordingly, when forming a metal interconnection, the contact hole for the interconnection is easily filled by Al-reflow so that the step coverage of the metal being deposited in the contact hole for the interconnection is enhanced, and the contact resistance is reduced. As a result, the reliability of the semiconductor device is improved.