Patents Assigned to Samsung Electronic Co, Ltd.
  • Patent number: 8744361
    Abstract: A communication system to feed back an index of a precoding matrix is provided. A terminal may feed back an index of an optimal precoding matrix based on estimated channel status. A base station may transmit data to the terminal based on the index of the precoding matrix received from the terminal.
    Type: Grant
    Filed: April 29, 2010
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-Jae Shin, Nam Yoon Lee, Yung Soo Kim, Young Jun Hong, Eun Yong Kim
  • Patent number: 8743791
    Abstract: An apparatus and method for a User Equipment in a wireless network including at least one Base Station (BS) are provided. The method includes receiving an Information Element (IE) for configuring at least one of a PUSCH power control method and a PUSCH DMRS generation method from the BS, determining a state of the IE, and transmitting a PUSCH and a DMRS for the PUSCH according to the state of the IE. A transmission power of the PUSCH is controlled and a base sequence for the PUSCH DMRS is generated according to the state of the IE. When the state of the IE indicates a first state, the transmission power of the PUSCH is determined according to a first power control equation. When the state of the IE indicates a second state, the transmission power of the PUSCH is determined according to a second power control equation.
    Type: Grant
    Filed: September 20, 2012
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Han Nam, Boon Loong Ng, Jianzhong Zhang
  • Patent number: 8745309
    Abstract: A cooperative memory card system includes a memory card device, and a host in signal communication with the memory card device, where the host assumes at least one memory management function for the memory card device; and a corresponding method of cooperative memory management between a host and a memory card device includes selecting at least one of several memory management functions to be performed by the host for the device.
    Type: Grant
    Filed: August 3, 2007
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myoung-Soo Jung, Chan-Ik Park, Sang-Jin Oh
  • Patent number: 8742514
    Abstract: A storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer.
    Type: Grant
    Filed: January 11, 2012
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Seok Suh, Tae-Seong Park
  • Patent number: 8744167
    Abstract: A depth noise filtering method and apparatus is provided. The depth noise filtering method may perform spatial filtering or temporal filtering according to depth information. In order to perform spatial filtering, the depth noise filtering method may determine a characteristic of a spatial filter based on depth information. Also, in order to perform temporal filtering, the depth noise filtering method may determine a number of reference frames based on depth information. The depth noise filtering method may adaptively remove depth noise according to depth information and thereby enhance a noise filtering performance.
    Type: Grant
    Filed: December 14, 2009
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byong Min Kang, Hwa Sup Lim
  • Patent number: 8743582
    Abstract: A three-dimensional (3D) semiconductor device may include a stack of chips, including a master chip and one or more slave chips. I/O connections of slave chips need not be connected to channels on a motherboard, and only electrode pads of a master chip may be connected to the channels. Only the master chip may provide a load to the channels. A through-substrate via (TSV) boundary may be set on a data input path, a data output path, an address/command path, and/or a clock path of a semiconductor device in which the same type of semiconductor chips are stacked.
    Type: Grant
    Filed: May 25, 2011
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Uk-song Kang, Dong-hyeon Jang, Seong-jin Jang, Hoon Lee, Jin-ho Kim, Nam-seog Kim, Byung-sik Moon, Woo-dong Lee
  • Patent number: 8743996
    Abstract: Disclosed is a digital broadcasting transmission/reception system having an improved reception performance and in a signal-processing method thereof. A digital broadcasting transmitter comprises a TS stream generator for inputting robust and normal packets having stuff bytes in predetermined positions and generating dual TS stream by inserting the robust packets between the normal packets; a randomizer for randomizing the dual TS stream; a stuff byte exchanger for replacing the stuff bytes of a randomized data streams from the randomizer to a predetermined known data; and an encoder for encoding a data streams to which the known data is inserted. Accordingly, the present invention detects the known data from a signal received from a reception side and uses the detected known data for synchronization and equalization, so that the digital broadcasting reception performance can be improved at poor multipath channels.
    Type: Grant
    Filed: October 29, 2008
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-deok Chang, Hae-joo Jeong, Joon-soo Kim
  • Patent number: 8741767
    Abstract: A semiconductor device includes a semiconductor substrate including a cell region and a core region adjacent to the cell region, active regions in the cell region and the core region, an interlayer insulating layer covering the active regions, upper cell contacts penetrating the interlayer insulating layer in the cell region, the upper cell contacts being adjacent to each other along a first direction and being electrically connected to the active regions, and core contacts penetrating the interlayer insulating layer in the active regions of the core region, the core contacts being adjacent to each other along the first direction and including upper connection core contacts electrically connected to the active regions, and dummy contacts adjacent to the upper connection core contacts, the dummy contacts being insulated from the active regions.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yoonmoon Park, Jae-Hwang Sim, Se-Young Park, Keonsoo Kim, Jaehan Lee, Seungwon Seong
  • Patent number: 8743092
    Abstract: A display apparatus includes a display panel which include a plurality of areas; a communication unit which receive information about brightness sensed by a pointing device; a backlight unit which includes a plurality of light sources; and a controller which controls the backlight unit to change the brightness of the plural areas by a predetermined unit, and determines a pointing position of the pointing device on the basis of relative variation in the information about the brightness. With this, it is possible to detect a pointing position of a pointing device in a display apparatus having a hold-type display panel.
    Type: Grant
    Filed: January 21, 2010
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyung-rae Kim, Jae-sung Park, Jung-jin Park, Jun-ho Sung, Tae-hyeun Ha, Rustam Abdulaev
  • Patent number: 8742466
    Abstract: Provided are a three-dimensional semiconductor device and a method of fabricating the same. The three-dimensional semiconductor device may include a mold structure for providing gap regions and an interconnection structure including a plurality of interconnection patterns disposed in the gap regions. The mold structure may include interlayer molds defining upper surfaces and lower surfaces of the interconnection patterns and sidewall molds defining sidewalls of the interconnection patterns below the interlayer molds.
    Type: Grant
    Filed: November 24, 2010
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-Joo Shim, Hansoo Kim, Wonseok Cho, Jaehoon Jang, Woojin Cho
  • Patent number: 8743604
    Abstract: Memory systems include at least one nonvolatile memory array having a plurality of rows of nonvolatile multi-bit (e.g., N-bit, where N>2) memory cells therein. A control circuit is also provided, which is electrically coupled to the nonvolatile memory array. The control circuit is configured to program at least two pages of data into a first row of nonvolatile multi-bit memory cells in the nonvolatile memory array using a first sequence of read voltages to verify accuracy of the data stored within the first row. The control circuit is also configured to read the at least two pages of data from the first row using a second sequence of read voltages that is different from the first sequence of read voltages. Each of the read voltages in the first sequence of read voltages may be equivalent in magnitude to a corresponding read voltage in the second sequence of read voltages.
    Type: Grant
    Filed: January 20, 2011
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Donghyuk Chae
  • Patent number: 8743230
    Abstract: Provided are a digital photographing apparatus, a method of controlling the same, and a recording medium storing a program to execute the method. The digital photographing apparatus includes a photographing unit, an image analyzing unit, and a composing providing unit. The photographing unit generates an image signal by capturing an image of a subject. The image analyzing unit detects an edge component of the image from the image signal. The composition providing unit provides an image composition by using the detected edge component.
    Type: Grant
    Filed: January 31, 2011
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Seung-hun Kim
  • Patent number: 8745339
    Abstract: A multi-core system and a method for processing data in parallel in the multi-core system are provided. In the multi-core system, partitioning and allocating of data may be dynamically controlled based on local memory information. Thus, it is possible to increase an availability of a Central Processing Unit (CPU) and a local memory, and is possible to improve a performance of data parallel processing.
    Type: Grant
    Filed: November 28, 2011
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Min Young Son, Shi Hwa Lee, Seung Woo Lee, Young Sam Shin
  • Patent number: 8744177
    Abstract: Provided is a method of performing an image segmentation so as to extract a building region from an input color image. The method includes extracting a plurality of straight lines that pass through a vanishing point and determining the building region in the image based on color values around the plurality of straight lines.
    Type: Grant
    Filed: December 2, 2008
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hwa Sup Lim, Do Kyoon Kim, Kee Chang Lee, Sun Hyuck Chae
  • Patent number: 8741710
    Abstract: Semiconductor devices are fabricated using a plasma process with a non-silane gas that includes deuterium, and which may result in improved device reliability and/or other improved device operational characteristics. One such method can include forming a gate oxide layer on a transistor region, which is defined on a substrate, and forming a gate electrode on the gate oxide layer. An etch stop layer is formed on the gate oxide layer and the gate electrode. A plasma process is performed on the interface between the gate oxide layer and the substrate using a non-silane treatment gas including deuterium. An interlayer dielectric layer is formed on the etch stop layer. A bottom metal line is formed on the interlayer dielectric layer.
    Type: Grant
    Filed: October 9, 2008
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Suk Shin, Ho Lee, Tae-Gyun Kim
  • Patent number: 8741517
    Abstract: A toner includes a binder including two different weight molecular weight resins, a colorant, and a releasing agent, wherein a gel permeation chromatogram (GPC) molecular weight distribution curve of the toner has a major peak (Mp) present in a range of about 1.0×104 to about 3.0×104 g/mol and a shoulder curve starting at 1.0×105 g/mol or more, and a storage modulus (G?) curve of the toner with respect to temperature has Ts, which is a temperature at which a storage modulus value begins to decrease, in a temperature range of about 50 to about 67° C.
    Type: Grant
    Filed: September 15, 2011
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyeong Pang, Jun-young Lee, Tae-hoe Koo, Su-bum Park, Ju-yeon Lee
  • Patent number: 8741665
    Abstract: A method of manufacturing a semiconductor module is provided. The method includes forming semiconductor chips on a bare substrate, performing a burn-in process on the bare substrate including the semiconductor chips, sorting semiconductor chips that exceed a predetermined level of operability determined by testing electrical driving in the semiconductor chips on the burned-in bare substrate, separating the semiconductor chips from one another by cutting the bare substrate, and directly mounting the module semiconductor chips on a module substrate.
    Type: Grant
    Filed: January 16, 2012
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sangyoung Kim, Jaereyun Jung, Sanggug Lee, Jongtae Park
  • Publication number: 20140146907
    Abstract: A method and apparatus for performing communication in a wireless communication system are provided. The method includes identifying a transmission mode configured for a serving cell by a Base Station (BS), by a User Equipment (UE), identifying an antenna configuration of the BS by the UE, determining the number of bits for a Rank Indication (RI) representing the number of layers based on the transmission mode and the antenna configuration, and generating an RI using the determined number of bits and transmitting the RI in transmission resources of the serving cell to the BS by the.
    Type: Application
    Filed: November 29, 2013
    Publication date: May 29, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Soeng-Hun Kim, Gert Jan Van Lieshout, Kyeong-In Jeong
  • Publication number: 20140145582
    Abstract: A light-emitting device package is provided including: a package substrate and a light-emitting device mounted on the package substrate. The package substrate includes first and second conductive regions each having a portion overlapping the light-emitting device. An electrode separator extends across the package substrate while penetrating the package substrate between the first and second conductive regions to electrically separate the first and second conductive regions from each other. A stress release portion surrounds at least a portion of each of the first and second conductive regions at an edge part of the package substrate. The stress release portion has different widths on both sides of the electrode separator interposed therebetween.
    Type: Application
    Filed: August 27, 2013
    Publication date: May 29, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Sung-uk ZHANG
  • Publication number: 20140146765
    Abstract: A method for canceling interference between multiple terminals scheduled on the same time/frequency resource for communication between a terminal and a base station using a plurality of antennas. The interference cancellation method includes receiving, at a terminal, control channel information from a base station, determining other base station information and other terminal information based on the received control channel information, receiving a data channel from the base station, and cancelling interference to the data channel based on the other base station information and other terminal information. The terminal is capable of mitigating interference caused by the signals transmitted to other terminals using the least information even with legacy terminal receivers having no interference cancellation capability.
    Type: Application
    Filed: November 27, 2013
    Publication date: May 29, 2014
    Applicant: Samsung Electronics Co., Ltd
    Inventors: Hyoungju Ji, Younsun Kim, Juho Lee, Hyojin Lee, Joonyoung Cho