Abstract: In an air conditioner, a drain extraction unit and a refrigerant pipe connecting unit may be disposed in a blocking region in which a discharge port is not provided so that a size of the discharge port may be secured and the discharge port may be uniformly disposed, thereby generating uniform airflow in a room. In a lower housing formed in a circular shape, some of components inside an indoor unit of the air conditioner may be disposed in a protrusion portion that protrudes from the circular housing, thereby facilitating the installation of the air conditioner. A condensate water collecting space disposed outside the housing may be provided in a drain tray, thereby efficiently preventing a leakage due to condensate water generated outside the housing. The housing, the drain tray, and the cover member of the air conditioner may be coupled by a coupling member coupled outside.

Abstract: A semiconductor device may include a first epitaxial pattern connected to first bridge patterns sequentially stacked on a first region and penetrating through a first gate structure, the first epitaxial layer on a side of the first gate structure and including a first conductivity type impurity, a first silicide pattern on the first epitaxial pattern and overlapping the first bridge patterns in the first direction, a second epitaxial pattern connected to second bridge patterns sequentially stacked on a second region and penetrating through a second gate structure, the second epitaxial layer on a side of the second gate structure and including a second conductivity type impurity different from the first conductivity type impurity, and a second silicide pattern on the second epitaxial pattern and overlapping the second bridge patterns in the third direction, wherein the first silicide pattern and the second silicide pattern have stress properties different from each other.

Abstract: A semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern and including semiconductor patterns that are vertically stacked and spaced apart from each other, a source/drain pattern connected to the semiconductor patterns, a gate electrode on the semiconductor patterns and including inner electrodes between neighboring semiconductor patterns and an outer electrode on an uppermost semiconductor pattern, and a gate contact structure electrically connected to the outer electrode. The gate contact structure may include a lower gate contact on a top surface of the outer electrode and an upper gate contact on the lower gate contact. The lower gate contact may include a first liner pattern, a first filling pattern on the first liner pattern, and a nucleation pattern between the first liner pattern and the first filling pattern. The upper gate contact may not include the nucleation pattern.

Abstract: There is provided a method for managing the inter-operability data rate range of serializer/deserializer (Ser-Des) test chips. The method doubles the inter-operability data rate range of the Ser-Des test chip, reduces the skew on data pins, and thereby increases the performance in the inter-operability test of the Ser-Des test chip.

Abstract: A titanium nitride etchant composition and a method of forming a semiconductor device using the same are provided. The titanium nitride etchant composition includes hydrogen peroxide, phosphoric acid, and an amine compound, wherein the amine compound includes two or more nitrogen atoms.

Abstract: Active regions defined by device isolation layer are provided on a substrate. A word line crossing the active regions and a gate dielectric layer between the word line and the active regions are provided. A capping insulating pattern covering an upper surface of the word line and a bit line on the word line are provided. The word line may include a first conductive pattern and a second conductive pattern on the first conductive pattern. The first conductive pattern may include a first metal element. The second conductive pattern may include the first metal element, a work function adjustment element, and a diffusion barrier element. An atomic radius of the diffusion barrier element may be smaller than an atomic radius of the first metal element.

Abstract: An apparatus for enhancing image quality includes a combining module configured to combine an independent image having pixels independent from each other and a correlated image including correlation information between pixels and an artificial intelligence (AI) apparatus configured to provide a weight used to combine the independent image and the correlated image.

Abstract: An electronic device includes a flexible display, a sensor, a memory, and a processor. The memory stores instructions that cause the processor to receive a first user input through a display, display at least one graphic user interface (GUI) on the display in response to the first user input, receive a second user input with respect to the at least one GUI, determine a multi-window layout on the basis of the second user input, receive a third user input with respect to the at least one GUI, determine, on the basis of the third user input, at least one application to be operated on the multi-window layout, detect a shape change of the electronic device due to unfolding or sliding by using the sensor, and display the multi-window layout and the at least one application on the display based on the display being extended.

Abstract: An electronic device is provided. The electronic device includes a first frame, a first opening formed in one area of the first frame, a first antenna that includes a first printed circuit board including first conductive patches, a first dielectric material that is disposed in the first opening and has a first dielectric constant, a second dielectric material disposed between the first dielectric material and the first conductive patches, and a wireless communication circuit that is electrically connected to the first antenna, wherein the second dielectric material may have a second dielectric constant that is lower than the first dielectric constant of the first dielectric material, and the wireless communication circuit may be configured to feed power to the first conductive patches to transmit and/or receive a signal in a frequency band of 10 gigahertz (GHz) or higher.

Abstract: An image sensor is provided. The image sensor includes a first pixel region and a second pixel region located within a semiconductor substrate, a first isolation layer surrounding the first pixel region and the second pixel region, a second isolation layer located between the first pixel region and the second pixel region, and a microlens arranged on the first pixel region and the second pixel region. Each of the first pixel region and the second pixel region include a photoelectric conversion device. The second isolation layer includes at least one first open region that exposes a portion of an area located between the first pixel region and the second pixel region.

Abstract: An integrated circuit device includes a substrate, a peripheral circuit structure disposed on the substrate, the peripheral circuit structure including a peripheral circuit and a lower wiring connected to the peripheral circuit, a conductive plate covering a portion of the peripheral circuit structure, a cell array structure disposed on the peripheral circuit structure with the conductive plate therebetween, the cell array structure including a memory cell array and an insulation layer surrounding the memory cell array, a through hole via passing through the insulation layer in a direction vertical to a top surface of the substrate to be connected to the lower wiring, and an etch guide member disposed in the insulation layer at the same level as the conductive plate to contact a portion of the through hole via.

Abstract: An electronic device is provided. The electronic device includes a millimeter wave (mmWave) antenna including a plurality of conductive patches, a wireless communication circuit, and a radio frequency (RF) cable electrically connecting the mmWave antenna to the wireless communication circuit. A first portion of the RF cable includes a base dielectric, a metal plate disposed on one surface of the base dielectric, and a shielding film including a first region in contact with the metal plate, a second region spaced apart from the metal plate by a first height, and a third region configured to connect the first region and the second region, at least one waveguide is formed by the second region, the third region, and a portion of the metal plate, and the wireless communication circuit transmits and/or receives RF signals corresponding to the plurality of conductive patches through the at least one waveguide.

Abstract: According to certain embodiments, an electronic apparatus comprises: a memory storing a generator previously trained to generate a prediction image based on one or more input images; and a processor configured to: acquire feature data from a plurality of image frames input through at least one layer included in the generator, extract feature data corresponding to change over time from the feature data acquired through an attention layer included in the generator, and acquire a prediction image frame by inputting the extracted feature data to at least one other layer included in the generator.

Abstract: An apparatus for fabricating a semiconductor device includes a chamber accommodating a substrate coated with a first fluid, a lower inlet which is placed in a lower wall of the chamber and providing a first supercritical fluid into the chamber, an upper inlet placed in an upper wall of the chamber and providing a second supercritical fluid into the chamber, a fluid outlet placed in the lower wall of the chamber and discharging a second fluid which is a mixture of the first fluid and the first supercritical fluid to outside of the chamber, and a drain cup placed between the lower wall of the chamber and the substrate, and having a first portion of which a width, in a horizontal direction, decreases toward the lower wall of the chamber, and a second portion which connects the first portion and the fluid outlet to each other.

Abstract: Disclosed is a semiconductor package with increased thermal radiation efficiency, which includes: a first die having signal and dummy regions and including first vias in the signal region, a second die on the first die and including second vias in the signal region, first die pads on a top surface of the first die and coupled to the first vias, first connection terminals on the first die pads which couple the second vias to the first vias, second die pads in the dummy region and on the top surface of the first die, and second connection terminals on the second die pads and electrically insulated from the first vias and the second vias. Each of the second die pads has a rectangular planar shape whose major axis is provided along a direction that leads away from the signal region.

Abstract: The present disclosure relates to a 5th generation (5G) or pre-5G communication system for supporting a higher data transmission rate beyond a 4th generation (4G) communication system such as long term evolution (LTE). An operation method of a control device in a network function virtualization (NFV) environment according to various embodiments of the present disclosure comprises the steps of: determining a virtual compute node corresponding to a server device; identifying physical layer information related to the server device and virtual layer information related to the virtual compute node; and displaying the physical layer information and the virtual layer information. Therefore, various embodiments of the present disclosure enable a user to easily identify a virtual layer element and/or a physical layer element which causes malfunction, and enable the malfunction to be quickly resolved.

Abstract: An operating method of a system-on-chip (SoC) which includes a processor including a first core and a dynamic voltage and frequency scaling (DVFS) module and a clock management unit (CMU) for supplying an operating clock to the first core, the operating method including: obtaining a required performance of the first core; finding available frequencies meeting the required performance; obtaining information for calculating energy consumption for each of the available frequencies; calculating the energy consumption for each of the available frequencies, based on the information; determining a frequency, which causes minimum energy consumption, from among the available frequencies as an optimal frequency; and adjusting an operating frequency to be supplied to the first core to the optimal frequency.