Abstract: A phase change memory device for use in a burst read operation and a data reading method are provided. The memory device includes a plurality of bit lines and a plurality of word lines. A memory cell array block has a plurality of phase change memory cells that are connected to cross points of the plurality of bit lines and the plurality of word lines. A sense amplifier block is connected to corresponding bit lines, and latches data of memory cells connected to the same word line simultaneously during a burst read operation, and then provides the latched data in response to a column address.

Abstract: A method of improving the viewing angle of a vertically-aligned liquid crystal display device is presented. The method involves designing a uniaxial compensation film to provide a retardation value of 200 nm or less for light having a wavelength of about 550 nm. Using this uniaxial compensation film, a display device can be built by obtaining a liquid crystal panel with liquid crystal molecules contained between glass substrates, coupling the uniaxial compensation film to at least one of the glass substrates, and coupling a polarization film and electrodes to the compensation film. Preferably, the uniaxial compensation film has a thickness less than or equal to 50 microns. Where there are multiple compensation films, the total thickness and the total retardation values should be considered.