Abstract: A storage controller including: a host interface circuit receiving first, second, third and fourth requests corresponding to first, second, third and fourth logical addresses; a memory interface circuit communicating with first nonvolatile memories through a first channel and second nonvolatile memories through a second channel; a first flash translation layer configured to manage the first nonvolatile memories; and a second flash translation layer configured to manage the second nonvolatile memories, the first flash translation layer outputs commands corresponding to the first and fourth requests through the first channel, and the second flash translation layer outputs commands respectively corresponding to the second and third requests through the second channel, and a value of the first logical address is smaller than a value of the second logical address, and a value of the third logical address is smaller than a value of the fourth logical address.

Abstract: A method of accessing a Non-Volatile Memory express over Fabrics (NVMeoF) memory region of a remote target device includes establishing a NVMeoF transport connection with the remote target device and creating an admin queue by sending a NVMeoF connect command to the remote target device. The method includes accessing the NVMeoF memory region of the remote target device by sending PropertyGet/PropertySet commands to an admin submission queue of the remote target device, performing one of (a) receiving PropertyGet/PropertySet completion queue entries from the remote target device when accessing the NVMeoF memory region of the remote target device is completed, or (b) receiving at least one of RDMA write and RDMA read requests from the remote target device in response to PropertyGet/PropertySet submission queue entries, and receiving completion queue entries from the remote target device when the accessing of the NVMeoF memory region of the remote target device is completed.

Abstract: Disclosed are an apparatus for and a method of manufacturing a semiconductor device. The apparatus includes a chamber, an evaporator that evaporates an organic source to provide a source gas on a substrate in the chamber, a vacuum pump that pumps the source gas and air from the chamber, an exhaust line between the vacuum pump and the chamber, and an analyzer connected to the exhaust line. The analyzer detects a derived molecule produced from the organic source and determines a replacement time of the evaporate.

Abstract: A storage device is provided. The storage device includes: a first non-volatile memory including a plurality of cell strings storing a plurality of logical address values and a plurality of physical address values; a second non-volatile memory including a plurality of memory cells corresponding to the plurality of physical address values; and a storage controller configured to read a first physical address value from the first non-volatile memory based on a first logical address value, and control a read operation on the second non-volatile memory based on the first physical address value. A first cell string among the plurality of cell strings includes: a plurality of first memory cells storing the first logical address value and respectively connected to word lines in a first group; and at least one second memory cell storing the first physical address value and connected to at least one word line in a second group.

Abstract: An electronic device and an operating method of an electronic device are provided. The electronic device receives, from a first server, access information about a second server for accessing the second server, receives access information about a third server from the second server accessed based on the access information about the second server, in response to a service connection request using the third server of an application, checks the validity of the application based on data for verifying the validity of the application included in the access information about the third server, and performs the service by accessing the third server based on the result of identifying the validity of the application.

Abstract: A method of controlling an electronic device for enabling a context transfer from a virtual session to an environment external to the virtual session, includes detecting at least one user in an a virtual session; based on detecting the at least one user, obtaining a context of at least one virtual device content present in the virtual session, based on detecting the at least one user; obtaining at least one user interest related with the at least one virtual device content using at least one user input in the virtual session; obtaining correlation information between the at least one user interest and at least one content capability of a plurality of real world user devices of the at least one user; and providing at least one real world user device, among the plurality of user devices, to the at least one user for transferring the context of the at least one virtual device content based on the correlation information.

Abstract: According to various example embodiments, an electronic device and an operation method thereof are disclosed. The disclosed electronic device includes: a display; a touch sensitive panel; a memory storing one or more instructions; and a processor configured to execute the one or more instructions stored in the memory to: receive a touch input through the touch sensitive panel, detect a change of a size of the touch input received for a specified time, identify a brush stroke corresponding to the detected change of the size of the touch input among a plurality of brush strokes, obtain trajectory information corresponding to the touch input from a database corresponding to the identified brush stroke, and process the touch input according to the obtained trajectory information corresponding to the touch input and output the processed touch input on the display.

Abstract: Disclosed is a storage device which includes non-volatile memory devices, temperature sensors, and a storage controller receiving temperature information from the temperature sensors. Each of the plurality of memory blocks is allocated to one of a plurality of zones, and the storage controller performs a first zone reallocation operation to reallocate a block of a non-volatile memory device with a lower temperature to a zone with a higher hit ratio and to reallocate a block of a non-volatile memory device with a higher temperature to a zone with a lower hit ratio. The storage controller performs a first zone rating to generate a first table based on hit ratio information of the zones, performs a first memory rating to generate a second table based on the temperature information, and performs the first zone reallocation operation based on the first table and the second table.

Abstract: A neuromorphic device includes a memory cell array including first resistive memory cells connected to word lines, bit lines and source lines, second resistive memory cells connected to the word lines, at least one redundancy bit line and at least one redundancy source line, third resistive memory cells connected to at least one redundancy word line, the bit lines and the source lines. The memory cell array stores data corresponding to a weight of a neural network in the first resistive memory cells, and is configured to generate a plurality of read currents based on input signals and the data. The neuromorphic device further includes an analog to digital converter (ADC) circuit configured to convert the plurality of read currents into a plurality of digital signals.

Abstract: There is provided a semiconductor device including an etching stop film which is placed disposed on a substrate; an interlayer insulating film which is disposed on the etching stop film; a trench which penetrates the interlayer insulating film and the etching stop film; a spacer which extends along side walls of the trench; a barrier film which extends along the spacer and a bottom surface of the trench; and a filling film which fills the trench on the barrier film. The trench includes a first trench and a second trench which are spaced apart from each other in a first direction and have different widths from each other in the first direction. A bottom surface of the second trench is placed disposed below a bottom surface of the first trench.

Abstract: Methods of forming a plurality of transistor stacks are provided. A method of forming a plurality of transistor stacks includes etching a plurality of nanosheets, using a plurality of spacers that are on sidewalls of a plurality of semiconductor fins as an etch mask, to provide a plurality of spaced-apart nanosheet stacks that each have at least one of the semiconductor fins thereon.

Abstract: Provided is a field effect transistor including a gate insulating layer having a two-dimensional material. The field effect transistor may include a first channel layer; a second channel layer disposed on the first channel layer; a gate insulating layer disposed on the second channel layer; a gate electrode disposed on the gate insulating layer; a first electrode electrically connected to the first channel layer; and a second electrode electrically connected to the second channel layer. Here, the gate insulating layer may include an insulative, high-k, two-dimensional material.

Abstract: A semiconductor device includes a first transistor, a second transistor and a third transistor provided on a substrate, the first to third transistors respectively including source and drain regions spaced apart from each other, a gate structure extending in a first direction on the substrate and interposed between the source and drain regions, and a channel region connecting the source and drain regions to each other. A channel region of the second transistor and a channel region of the third transistor respectively include a plurality of channel portions, the plurality of channel portions spaced apart from each other in a second direction, perpendicular to an upper surface of the substrate, and connected to the source and drain regions, respectively. A width of a channel portion of the third transistor in the first direction is greater than a width of a channel portion of the second transistor in the first direction.

Abstract: An electronic device according to various embodiments of the disclosure may include: a first housing, a second housing configured to be movable with respect to the first housing, a flexible display coupled to the first housing or the second housing to be movable together with a coupled housing, an illuminance sensor, and a processor, wherein the processor is configured to: measure an illuminance value using the illuminance sensor, determine an area of interest based on a movement of the flexible display, obtain color information on an image displayed in the area of interest, calculate a correction value using the obtained color information, correct the measured illuminance value based on the calculated correction value, and adjust luminance of the flexible display using the corrected illuminance value.

Abstract: A display driving circuit is provided. The circuit drives a display panel that includes data lines, sensing lines, and sub-pixels connected to the data lines and the sensing lines. The display driving circuit includes a data driver integrated circuit that drives the data lines. The data driver integrated circuit includes a driving block and a sensing block. The driving block includes plural digital-analog converters (DACs) each performing digital-analog conversion with respect to received sub-pixel data to generate output voltages and provide the output voltages of the DACs to the data lines. The sensing block measures grayscale voltages output from the DACs in a first operation mode and measures pixel voltages of the sub-pixels received from the sensing lines in a second operation mode.

Abstract: An electronic device constituting a first block node included in a blockchain network of the disclosure is provided. The electronic device performs, in response to an input of requesting a transaction, obtaining first input data, output data, and a first identification value indicating a unique value capable of identifying a first smart contract, validating a blockchain application, forwarding a public key for a private key and an input data request to the second block node, based on the validation result, receiving, from the second block node, second input data encrypted with the public key and a second identification value indicating a unique value capable of identifying a second smart contract, and transmitting transaction data including the first input data and the output data to the server node, based on the comparison result of the first identification value and the second identification value.

Abstract: An electronic device includes: a display; and a processor configured to: play a video on the display by using a first application, obtain playback information associated with playing the video by using the first application, activate a second application while the video is played by using the first application, determine a frame of the video corresponding to a time point at which the second application is activated, and seek the frame to play the video by using the second application, based on the second application being able to seek the frame within a reference time.

Abstract: A memory device includes a memory cell including a selection layer and a phase change material layer, and a controller, wherein the selection layer includes a switching material, the phase change material layer includes a phase change material, and the controller is configured to apply a write pulse to the selection layer and the phase change material layer and control a polarity, a peak value, and a shape of the write pulse.

Abstract: A method and apparatus for determining safety of a battery are disclosed, where the method includes identifying a charge state or a discharge state of the battery, activating pulse probe currents at different depths of charge or discharge (charge/discharge) of the battery, in response to identifying the charge or discharge state of the battery, and detecting and differentiating between a state of short (SOS) and a state of health (SOH) of the battery based on variations of the pulse probe currents as a function of the depths of charge/discharge.