Abstract: Disclosed are a photoelectric conversion device, and a sensor and an electronic device including the same. The photoelectric conversion device may include a first electrode and a second electrode and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes a first material and a second material, which form a pn junction, and a third material that is different from the first material and the second material. The third material is configured to modify a distribution of energy levels of the first material or the second material.

Abstract: A remote controller enabled to control an external device includes a communication interface to communicate with the external device, an energy harvester to obtain an electrical energy, a power supplier to receive supply of the electrical energy from the energy harvester, and a processor configured to, based on a supply voltage of the power supplier being greater than or equal to a first threshold value and less than a second threshold value, control the communication interface to release communication connection established to communicate with the external device, and supply the electrical energy obtained by the energy harvester to the power supplier.

Abstract: An integrated high-speed image sensor includes a pixel array; a processor configured to determine a region of interest (ROI) and a region of non-interest (RONI) of the pixel array; an analog signal processing circuit configured to read out ROI image data at a first frame rate and read out RONI image data at a second frame rate; and a memory storing the ROI image data and the RONI image data.

Abstract: An image sensor includes a pixel separation part in a substrate and configured to separate pixels, the pixels including a first pixel, the pixel separation part including first to fourth sidewalls that at least partially define the first pixel, a first source follower gate electrode on the first pixel and adjacent to the first sidewall and the second sidewall, a first impurity region adjacent to a first corner where the first sidewall and the second sidewall meet, a second impurity region adjacent to a second corner where the second sidewall and the third sidewall meet, and a third impurity region adjacent to a third corner where the first sidewall and the fourth sidewall meet. The first to third impurity regions are adjacent to the first source follower gate electrode. The second impurity region and the third impurity region are electrically connected to each other.

Abstract: A display device and a control method thereof are provided. The display device a display and at least one processor which controls the display to display first content; based on a multi-view execution command being input, determines at least one piece of content for providing a multi-view screen, the at least one piece of content being determined based on a context in which a multi-view execution command is input; displays, on the display, a list including the at least one piece of content; and displays the multi-view screen including first content and second content, wherein the second content is selected from among the at least one piece of content included in the list according to a user command. The first content may be provided by a first external device connected through of a first interface, and the second content may be provided by a second external device connected through of a second interface that is different from the first interface.

Abstract: A semiconductor apparatus may include a plurality of semiconductor unit devices. Each of the semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.

Abstract: Provided is a multi-stack semiconductor device that includes: a lower nanosheet transistor including a plurality of lower channel layers surrounded by a gate structure; and an upper nanosheet transistor stacked on the lower nanosheet transistor and including a plurality of upper channel layers surrounded by the gate structure, wherein the lower channel layers have a smaller channel interval than the upper channel layers.

Abstract: Provided are a spectral filter, and an image sensor and an electronic device each including the spectral filter. The spectral filter includes a plurality of first filter arrays respectively including a plurality of band filters and a plurality of second filter arrays provided on the plurality of first filter arrays. The plurality of unit filters includes a first reflecting plate, a second reflecting plate provided above the first reflecting plate, and a plurality of cavities provided between the first and second reflecting plates and each having central wavelengths of different bands. Each of the plurality of cavities includes a lower cavity layer, a upper cavity layer, and an intermediate light absorption layer provided between the lower cavity layer and the upper cavity layer. Each of the plurality of band filters is configured to transmit light in a specific band, and two or more of the plurality of cavities are configured to have a same effective refractive index.

Abstract: A storage device includes a nonvolatile memory device that stores user data, and a storage controller that controls the nonvolatile memory device under control of a host device. The storage controller includes a storage interface circuit that communicates with the host device through a compute express link (CXL) interface, a NAND interface circuit that communicates with the nonvolatile memory device, and a processor that loads map data from an external memory device through the storage interface circuit and controls the nonvolatile memory device through the NAND interface circuit based on the map data.

Abstract: Provided is an electronic apparatus that includes a microphone; a communication interface; a memory storing information on a first encoder, a first decoder, a first interpretation model comprising a first version conversion module, and at least one first version which the first conversion module may convert; and a processor. The processor is configured to communicate with an external device and receive information about at least one second version corresponding to a second interpretation model in the external device; obtain information on a compatible version based the at least one first version and the least one second version; based on a user voice, obtain a first feature vector corresponding to the user voice using the first encoder, convert the first feature vector to a second feature vector corresponding to the compatible version, and transmit the second feature vector to the external device.

Abstract: A display module includes a substrate; a plurality of electrode pads provided on a surface of the substrate; a plurality of first barriers provided between the plurality of electrode pads; and a plurality of light-emitting diodes, each of the plurality of light-emitting diodes including device electrodes connected to corresponding electrode pads of the plurality of electrode pads, wherein each of the plurality of first barriers is provided between a pair of adjacent electrode pads corresponding to a light-emitting diode of the plurality of light-emitting diodes.

Abstract: A method of manufacturing a semiconductor device including providing a first precursor on a substrate to adsorb a first element of the first precursor onto a first region of the substrate, providing a second precursor on the substrate to adsorb a second element of the second precursor onto a second region of the substrate, the second region being different from the first region, and providing a reactant including oxygen on the substrate to form an oxide semiconductor layer including the first element of the first precursor, the second element of the second precursor, and the oxygen of the reactant may be provided.

Abstract: An electronic device includes: a housing; a battery disposed in the housing; and a sensor module at least partially disposed in the housing, wherein the sensor module includes: a board; a biometric recognition sensor disposed on the board; a sealing member around at least a part of the board and at least part of the biometric recognition sensor, and a biosignal sensing electrode around at least a part of the sealing member, wherein the biosignal sensing electrode is electrically connected to the board and at least partially exposed outside of the housing.

Abstract: A dryer which comprises: a communication interface; a drum; a driving motor to drive the drum; a hot wind supplying device to supply hot air to the drum; a sensing device that is self-generating whereby power is generated according to a movement of the sensing device as the drum rotates while the drum is being driven by the driving motor, and transmitting, through the communication interface, a harvester voltage value obtained in association with the sensing device and sensing data sensed by the sensing device; and a processor configured to acquire the sensing data from the sensing device, the sensing data acquired being based on the harvester voltage value which is transmitted from the sensing device while the driving motor is being controlled based on an input of a user, and control an operation of the hot wind supplying device based on the acquired sensing data.

Abstract: The present techniques generally relate to a system and method for knowledge distillation between machine learning, ML, models. In particular, the present application relates to a computer-implemented method for training a condenser model to learn how to transfer knowledge between a teacher model and a student model, and using this trained condenser model to more quickly generate new student models.

Abstract: A transparent display module includes: a transparent substrate; a line pattern provided on the transparent substrate in a form of a two-dimensional grid; a plurality of micro-pixel integrated circuits (ICs) provided on the line pattern; a plurality of inorganic light emitting elements provided on the line pattern or the plurality of micro-pixel ICs; a plurality of transparent areas formed in areas in which the line pattern is not provided, and at least one pixel circuit configured to supply a driving current to the plurality of inorganic light emitting elements.

Abstract: Provided are a magnetic memory using a spin current, an operating method thereof, and/or an electronic apparatus including the magnetic memory. The magnetic memory includes, first and second wirings spaced apart from each other and intersecting each other, and a data storage layer between the first and second wirings. The data storage layer includes a pinned layer with a fixed magnetic moment, a free layer spaced apart from the pinned layer and not having a fixed magnetic moment, and an insulating tunnel barrier layer provided between the pinned layer and the free layer. Among the first and second wirings, the wiring contacting the free layer includes a conductive wiring having no spin Hall effect, and the free layer includes a two-dimensional material which at room temperature has a spin Hall effect, magnetic properties, and metal properties. The two-dimensional material includes a two-dimensional van der Waals material.

Abstract: A semiconductor device includes a device isolation layer on a substrate; pattern groups including fin patterns extending in a first direction; and gate structures extending in a second direction to intersect the fin patterns. A first pattern group, among the pattern groups, may include first fin patterns. At least a portion of the first fin patterns may be arranged with a first pitch in the second direction. The first pattern group may include a first planar portion extending from a first recess portion. A central axis of the first recess portion may be spaced apart from a central axis of one of the first fin patterns by a first distance in the second direction. The first planar portion may have a first width in the second direction and being greater than the first pitch. The first distance may be about 0.8 times to about 1.2 times the first pitch.

Abstract: A method of fabricating sample wafers includes forming silver particles on a surface of a wafer, forming nanowires on the wafer, removing the silver particles, and terminating dangling bond sites from surfaces of the nanowires with deuterium.

Abstract: A motor comprising: a stator; a rotating shaft arrangeable inside the stator; a rotor rotatable about the rotating shaft by electromagnetically interacting with the stator while the rotating shaft is arranged inside the stator; and an impeller coupleable to the rotating shaft to generate a flow of air. A protrusion or a groove is formed on the impeller to correct for an imbalance of the impeller.