Abstract: A liquid crystal display comprises: first and second panels facing each other; a compensation film and a first polarizer disposed on the first panel, the compensation film having phase retardation characteristics; and a second polarizer having a supporting film disposed on the second panel, the supporting film having phase retardation characteristics. In alternative embodiments, a supporting film is used in place of the compensation film. The supporting film has retardation characteristics.

Abstract: A device for preventing an unintentional key input in a mobile terminal with a removable outer case is provided. The device includes a connection section to which the outer case is connected, a sensing unit for sensing whether the outer case is opened or closed, and a control unit for sensing whether the outer case is connected to the mobile terminal through the connection section. The control unit activates a key input unit of the mobile terminal when the sensing unit senses that the outer case is opened.

Abstract: A semiconductor device includes a semiconductor package, a circuit board and an interval maintaining member. The semiconductor package has a body and a lead protruded from the body. The circuit board has a first land electrically connected to the lead. The interval maintaining member is interposed between the circuit board and the body. The interval maintaining member maintains an interval between the lead and the first land. Thus, an interval between the lead and the land is uniformly maintained, so that a thermal and/or mechanical reliability of the semiconductor device is improved.

Abstract: A method for manufacturing a villus-type capacitor of a semiconductor memory device formed by stacking a storage electrode, a dielectric film and a plate electrode on a semiconductor substrate further comprising the steps of forming a first conductive layer by depositing a conductive material on the semiconductor substrate; covering the first conductive layer with a second material having grains of a first material; selectively removing the second material using the grains of the first material as a mask; etching a predetermined portion of the first conductive layer using a grain pattern formed by removing the second material as a mask; removing the grain pattern; completing the formation of a storage electrode by defining into each unit cell the villus-formed first conductive layers on the surface of the device utillizing an etching process; forming the dielectric film over the surface of the storage electrode; and forming the plate electrode by depositing a second conductive layer over the dielectric film.