Abstract: A semiconductor memory device, a local precharge circuit and a method thereof are provided. The example semiconductor memory device may include a local input/output line connected to a bit line coupled with a memory cell, through a column selection transistor, the local input/output line providing a transmission path on which to transmit a data signal through the bit line to a local sense amplifier and a local precharge circuit configured to adjust a precharge voltage level of the local input/output line based on a status of an active mode and a status of a column selection signal. The active mode may be a period where a word line is enabled. The example local precharge circuit may be included within the example semiconductor memory device.
Type:
Grant
Filed:
September 19, 2006
Date of Patent:
January 13, 2009
Assignee:
Samsung Electronics O., Ltd.
Inventors:
Soon-Seob Lee, Dae-Joon Kim, Dong-Ho Hyeon