Patents Assigned to Samsung Electronics O., Ltd.
  • Patent number: 7477558
    Abstract: A semiconductor memory device, a local precharge circuit and a method thereof are provided. The example semiconductor memory device may include a local input/output line connected to a bit line coupled with a memory cell, through a column selection transistor, the local input/output line providing a transmission path on which to transmit a data signal through the bit line to a local sense amplifier and a local precharge circuit configured to adjust a precharge voltage level of the local input/output line based on a status of an active mode and a status of a column selection signal. The active mode may be a period where a word line is enabled. The example local precharge circuit may be included within the example semiconductor memory device.
    Type: Grant
    Filed: September 19, 2006
    Date of Patent: January 13, 2009
    Assignee: Samsung Electronics O., Ltd.
    Inventors: Soon-Seob Lee, Dae-Joon Kim, Dong-Ho Hyeon