Abstract: A storage device may include a plurality of non-volatile memories, a host interface configured to receive at least one packet including a TRIM command from a host device, and the host interface configured to determine a trim path for processing the TRIM command by comparing a first trim range threshold value and a trim range of the TRIM command, a trim manage module configured to generate status data by monitoring the at least one packet, the trim manage module configure to determine the first trim range threshold value based on the status data, and a processor configured to process the TRIM command based on the trim path.

Abstract: A storage device according to some example embodiments comprises a non-volatile memory including a first memory including a plurality of zones configured to sequentially store data based on a write pointer, the write pointer indicating a position to write the data, and a second memory configured to store preliminary data to be written in the plurality of zones, and a storage controller configured to receive a plurality of operation requests, each of the plurality of operation requests including a logical block address, a write command, and write data, and store first write data corresponding to a first operation request in the second memory as first preliminary data, if the position of a first logical block address corresponding to the first operation request among the plurality of operation requests and the write pointer does not match.

Abstract: A semiconductor package includes a package substrate including a first conductive pad at an upper portion thereof, a lower semiconductor chip stack structure including dynamic random access memory chips that are stacked in a vertical direction on the package substrate and electrically connected to each other by a through electrode, an upper semiconductor chip stack structure including flash memory chips, each of the flash memory chips may include a second conductive pad at an upper portion thereof, stacked in the vertical direction on the lower semiconductor chip stack structure, a conductive connection pattern contacting an upper surface of the first conductive pad and extending in the vertical direction, and a bonding wire contacting at least one of the second conductive pads and being electrically connected to the conductive connection pattern.

Abstract: Provided are a semiconductor device, and/or an electronic device and a memory device both including the semiconductor device. The semiconductor device includes a lower electrode, an upper electrode spaced apart from the lower electrode, a channel layer between the lower electrode and the upper electrode, a gate insulating layer in the channel layer, an insertion layer provided between the channel layer and the gate insulating layer, and a gate electrode on the gate insulating layer. The channel layer has a vertical channel structure extending in a vertical direction from the lower electrode toward the upper electrode. The insertion layer may include a nitride of a metal and/or an oxynitride of a metal, and the metal may include one or more of niobium (Nb), vanadium (V), or tantalum (Ta).

Abstract: An image sensor includes a first pixel and a second pixel. The first pixel includes a first photodiode, a second photodiode at least partially overlapping the first photodiode in a first direction, a first metal shield on one photodiode of the first photodiode or the second photodiode in a vertical direction perpendicular to the first direction, a first color filter on another photodiode of the first photodiode or the second photodiode in the vertical direction, and a first micro lens on both the first metal shield and the first color filter in the vertical direction. The second pixel includes a third photodiode, a fourth photodiode at least partially overlapping the third photodiode in the first direction, a second color filter on both the third photodiode and the fourth photodiode in the vertical direction, and a second micro lens on the second color filter in the vertical direction.

Abstract: A filtering device for passing a frequency component above a first cutoff frequency in an input signal includes an amplification circuit configured to generate an amplification signal based on the input signal, a first feedback signal, and a second feedback signal, a filter circuit configured to generate an output signal by passing a frequency component above a second cutoff frequency higher than the first cutoff frequency in the amplification signal, and a feedback circuit configured to generate the first feedback signal and the second feedback signal by amplifying the output signal, the filter circuit configured to set the first cutoff frequency based on a first amplification value corresponding to a gain of the amplification circuit and the second cutoff frequency.

Abstract: Provided are a capacitor and an electronic device including the same. The capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer between the first electrode and the second electrode. The dielectric layer includes an intervening layer in the dielectric layer, and the intervening layer includes aluminum oxide and gallium oxide.

Abstract: Disclosed is an image fusion method and apparatus. The fusion method includes detecting first feature points of an object in a first image frame from the first image frame; transforming the first image frame based on the detected first feature points and predefined reference points to generate a transformed first image frame; detecting second feature points of the object in a second image frame from the second image frame; transforming the second image frame based on the detected second feature points and the predefined reference points to generate a transformed second image frame; and generating a combined image by combining the transformed first image frame and the transformed second image frame.

Abstract: An etching composition may include an oxidizing agent, an accelerator, an ammonium salt, and an aqueous solvent, wherein the accelerator may include one or more compounds represented by Formula 1, and the ammonium salt may include at least one compound having a structure in which at least one of hydrogen ions (H+) of a hydroxyl group (*—OH) or a thiol group (*—SH) included in the accelerator is substituted with an ammonium cation (NH4+): Formula 1 is as described in the present specification.

Abstract: A method for generating a mask image may include generating the mask image from a target pattern by using a first artificial intelligence (AI) model, modifying the mask image by using an activation function, calculating a gradient of the activation function by using a gradient of a loss function determined based on a difference between the target pattern and a pattern predicted through an optical simulation the modified mask image performed by a second AI model, and updating the modified mask image based on the gradient of the activation function.

Abstract: Disclosed are semiconductor packages and methods of fabricating the same. The semiconductor package comprises a first redistribution substrate and a first semiconductor device on the first redistribution substrate. The first redistribution substrate includes a first dielectric layer that includes a first hole, an under-bump that includes a first bump part in the first hole and a second bump part that protrudes from the first bump part onto the first dielectric layer, an external connection terminal on a bottom surface of the first dielectric layer and connected to the under-bump through the first hole, a wetting layer between the external connection terminal and the under-bump, and a first barrier/seed layer between the under-bump and the first dielectric layer and between the under-bump and the wetting layer.

Abstract: A signal processor includes a first filter circuit configured to generate an output signal based on an input signal and a feedback signal, the first filter circuit including a first resistor and a first capacitor, a filtering frequency range of the signal processor being set based on a first resistance of the first resistor and a first capacitance of the first capacitor, a second filter circuit connected to a feedback path of the first filter circuit, the second filter circuit being configured to generate an intermediate signal based on the output signal, and an offset cancellation circuit connected to the feedback path of the first filter circuit, the offset cancellation circuit being configured to generate the feedback signal based on the intermediate signal.

Abstract: A method for sharing a reason cause for a mission critical communication (MCX) communication over pre-established session in an MCC network is provided. The method includes transmitting, to the server, a call initiation request to initiate a call, wherein the call initiation request includes first information on a session type and second information on a resource list, receiving, from the server, a mission critical pre-established session control (MCPC) connect message including a security message, determining whether an authentication for the security message is successful, and transmitting, to the server, a first MCPC acknowledgement message including a reason cause field to inform a reason for terminating the call in response to determining that the authentication for the security message is not successful.

Abstract: An electronic device may include: a display for displaying content; a memory for storing data corresponding to the content; and a processor operatively connected to the display and the memory, wherein the processor may be configured to: display content on the display; in response to a user input related to copying, store at least a partial area of the content as first clip data; generate second clip data different from the first clip data on the basis of at least a part of a result of image or text analysis relating to the first clip data; and display, on the display, a first indicator relating to the first clip data and a second indicator relating to the second clip data. Other various embodiments identified through the specification are possible.

Abstract: A processor-implemented method with charging control includes: estimating respective step degradation amounts in charging steps of a first charging interval for each of first candidate current patterns of charging a battery from a first state of charge (SOC) level to a second SOC level during the first charging interval; determining an interval degradation amount in the first charging interval for each of the first candidate current patterns, based on the estimated step degradation amounts; and selecting a first representative current pattern indicating a minimum degradation amount from among the first candidate current patterns, based on the determined interval degradation amounts.

Abstract: A miniature optical sensing device for determining distance to an object and velocity of the object, and identifying the shape and structure of the object, for example, a solid-state LIDAR, and a method for determining distance to an object and velocity of the object, and identifying the shape and structure of the object by using the optical sensing device is provided. The sensing device includes optically coupled one laser radiation source, at least one optical collimator, a beam-splitter, a light reflector, an optical beam guide, at least one detector for detecting radiation reflected from the object, as well as a controller, wherein the at least one detector corresponding to the respective at least one laser radiation source forms individually functioning and individually adjustable measuring channels with the possibility of providing data about the object, and the controller is configured to ensure the simultaneous or selective operation of the measuring channels.

Abstract: A semiconductor package includes: a substrate including an insulating layer, a plurality of pads on the insulating layer, a surface protective layer covering the insulating layer and having first through-holes exposing at least a portion of the insulating layer and second through-holes exposing at least a portion of each of the plurality of pads, a plurality of first dummy patterns extending from the plurality of pads to the first through-holes, and a plurality of second dummy patterns extending from the first through-holes to an edge of the insulating layer; a semiconductor chip on the substrate and including connection terminals electrically connected to the plurality of pads exposed through the second through-holes; and an encapsulant encapsulating at least a portion of the semiconductor chip and filling the first through-holes, wherein a separation distance between the first through-holes is greater than a separation distance between the second through-holes.

Abstract: The disclosure relates to a method and an apparatus for dynamic scene updates (scenes including timed media) requiring extensions to scene description patch documents supporting timed media. A method for timed and event triggered updates in a scene description for extended reality (XR) multimedia is provided. The method includes parsing a scene description and at least one scene update track sample in a timed scene description update track or at least one scene update item to update the scene description and rendering the updated scene description on a display.

Abstract: A thin film structure includes a substrate; and a material layer having a fluorite structure, the material layer on the substrate and comprising crystals of which <112> crystal orientation is aligned in a normal direction of the substrate. The material layer may have ferroelectricity. The material layer may include the crystals of which the <112> crystal orientation is aligned in the normal direction of the substrate among all crystals of the material layer in a dominant ratio.

Abstract: A method, performed by a user equipment (UE), in a wireless communication system includes: obtaining sidelink logical channel configuration information corresponding to a logical channel and including a sidelink logical channel priority (sl-priority) parameter; selecting a destination associated with one of unicast, groupcast, and broadcast, based on the sidelink logical channel configuration information and sl-priority configured for each of at least one logical channel including sidelink data available for transmission; allocating sidelink resources to at least one logical channel corresponding to the destination based on the sl-priority configured for each of the at least one logical channel corresponding to the destination; multiplexing sidelink data included in the at least one logical channel corresponding to the destination to a medium access control (MAC) protocol data unit (PDU); and transmitting the MAC PDU to another UE using the sidelink resources.