Abstract: According to an example embodiment, an electronic device may include a communication module including a first configuration pin, a processor configured to identify a device type of the communication module through the first configuration pin, and a first antenna device controlled by the communication module through the first configuration pin, in which the communication module is configured to transmit an identification signal for identifying the device type of the communication module through the first configuration pin for a time interval from the start of booting the processor to the completion of initializing the communication module, and transmit a first control signal for controlling the first antenna device through the first configuration pin after the time interval.

Abstract: A communication device includes a transmitter that, in a first operation, distorts an input signal through a digital predistortion unit, converts the distorted input signal into an analog signal, performs frequency up-conversion on the converted analog signal to generate a first signal, amplifies the generated first signal through a power amplifier, and couples the amplified first signal; a receiver that, in the first operation, receives the coupled first signal from the transmitter, performs frequency down-conversion on the coupled first signal so as to generate a second signal, and converts the generated second signal into a digital signal through one or more analog-to-digital converters that are turned on, among a plurality of analog-to-digital converters; and a processor that, in the first operation, causes one or more of the plurality of analog-to-digital converters to be turned on and a remainder of the plurality of analog-to-digital converters to be turned off.

Abstract: A radio-frequency (RF) circuit including: a multi-tone generation circuit configured to generate a multi-tone signal including a plurality of tones; a predistortion circuit configured to predistort the multi-tone signal or a modulation signal and output a predistortion signal; a power amplifier configured to amplify the predistortion signal and output an output signal; and a predistortion modeling circuit configured to model a predistortion model corresponding to the predistortion circuit based on the predistortion signal corresponding to the multi-tone signal and the output signal.

Abstract: An electronic device includes a memory; a communication interface; and a processor. The processor is configured to, based on a source device connected through the communication interface being identified to support a first version of transmission standard, convert first Extended Display Identification Data (EDID) information, which is stored in the memory and corresponds to a second version of transmission standard, to second EDID information corresponding to the first version of transmission standard, and change a state of a hot plug detect signal related to the communication interface so that the source device reads EDID information.

Abstract: A semiconductor package includes a substrate, a semiconductor layer on the substrate, a wiring structure on the semiconductor layer, a connection pad on and connected to the wiring structure, a test pad on and connected to the wiring structure, the test and connection pads being horizontally spaced from each other, a first liner film on the wiring structure and having a first bonding pad trench, a second liner film on the first liner film and having a second bonding pad trench, a first bonding pad including a barrier layer in contact with the first liner film and a metal layer on the barrier layer, and a second bonding pad filling an inner portion of the second bonding pad trench and in contact with the second liner film, wherein the second liner film integrally covers upper surfaces of the barrier layer and metal layer.

Abstract: A semiconductor device is provided. The semiconductor device includes: first lower conductive lines extending in a first direction and disposed at a first height level; first upper conductive lines extending in the first direction and vertically overlapping the first lower conductive lines at a second height level, higher than the first height level; single crystal semiconductor patterns disposed between the first lower conductive lines and the first upper conductive lines at a third height level; intermediate conductive lines extending in a second direction intersecting the first direction and passing between the single crystal semiconductor patterns, between the first height level and the second height level; and data storage layers including portions between the intermediate conductive lines and the single crystal semiconductor patterns.

Abstract: A semiconductor device including a first semiconductor structure overlapping a second semiconductor structure, the second semiconductor structure having first and second regions and including a plate layer; gate electrodes spaced apart from each other in a first direction; channel structures passing through the gate electrodes; gate separation regions extending in a second direction; first and second upper isolation regions dividing an upper gate electrode into first, second and third sub-gate electrodes between adjacent gate separation regions; and contact plugs extending in the first direction, each of the first and second upper isolation regions has a region extending in a third direction, and the first sub-gate electrode has a first pad region having a first width and a second pad region having a second width narrower than the first width in a fourth direction, and the first sub-gate electrode is connected to one of the contact plugs.

Abstract: The disclosure relates to the 5th generation (5G) or 6th generation (6G) communication system to support a high data transmission rate than before. A method of operating a streaming service client (SSC) node in a wireless communication system is provided. The method includes an operation of establishing a connection to a streaming service provider (SSP) via two types of services that are enhanced mobile broadband (eMBB) and ultra reliable low latency communication (URLLC), an operation of receiving first data from the SSP via the eMBB, and simultaneously receiving second data via the URLLC, wherein the second data is metadata of the first data, and operation of determining whether the first data is successfully received, and an operation of producing a data stream using the second data in a case in which the first data is not successfully received.

Abstract: Provided is an integrated circuit including standard cells arranged over a plurality of rows. The standard cells may include: a plurality of functional cells each implemented as a logic circuit; and a plurality of filler cells including at least one first filler cell and at least one second filler cell that each include at least one pattern from among a back end of line (BEOL) pattern, a middle of line (MOL) pattern, and a front end of line (FEOL) pattern, and wherein the at least one first filler cell and the at least one second filler cell have a same size as each other, and a density of one of the at least one pattern of the at least one first filler cell is different from a density of one of the at least one pattern of the at least one second filler cell.

Abstract: An image sensor is provided. The image sensor includes: a semiconductor substrate including a first surface and a second surface, which are opposite to each other; a photoelectric conversion region in the semiconductor substrate; a vertical transfer gate, which extends into the semiconductor substrate from the first surface toward the photoelectric conversion region; a floating diffusion region, which is provided in the semiconductor substrate, is spaced apart from the vertical transfer gate, and is an n-type impurity region; and a second impurity region, which is provided between the vertical transfer gate and the floating diffusion region and is a p-type impurity region.

Abstract: The present disclosure relates to a communication method and system for converging a 5th generation (5G) communication system for supporting higher data rates beyond a 4th-generation (4G) system with a technology for internet of things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method for receiving system information (SI) by a user equipment (UE) in a wireless communication system is provided.

Abstract: A smart repeater includes a transceiver configured to receive a reference signal, receive, from a base station (BS), a subcarrier allocation for a plurality of user equipments (UEs), receive, from the BS, a downlink (DL) beam associated with the plurality of UEs, and retransmit the DL beam. The smart repeater further includes a processor, operatively coupled to the transceiver, the processor configured to determine a beam split configuration for the DL beam based on the subcarrier allocation, and cause the transceiver to retransmit the DL beam according to the beam split configuration. To retransmit the DL beam according to the beam split configuration the transceiver is further configured to generate a frequency dependent beam for each of the plurality of UEs, and direct the frequency dependent beam for each of the plurality of UEs to a UE associated with the frequency dependent beam.

Abstract: A testing method, device and/or system based on a Soft Subscriber Identity Module (SoftSIM) are provided. The testing method based on a SoftSIM including receiving a SoftSIM and a testing traffic value transmitted by a SoftSIM cloud server, importing and activating the received SoftSIM and completing registration in a network, and performing a real-network testing based on the SoftSIM and the received testing traffic value may be provided. According to the testing method, automatic real-network testing of a production line can be achieved by using limited SoftSIM resources and traffic to avoid frequent insertion of physical SIM cards on the production line, and the cost of a large number of physical SIM cards is saved and testing is facilitated by using flexible SoftSIM configurations. The use of dynamically configurable SoftSIM communication avoids wasting the communication cost of individual physical SIM cards.

Abstract: A method for communicating data by an electronic device is provided. The method includes transmitting a signal including audio/video (A/V) data to a first external electronic device through a first communication module, while connected with the first external electronic device, generating data or a signal unrelated to the A/V data or receiving the data or signal unrelated to the A/V data from an external electronic device other than the first external electronic device, and providing an audio or a video through a display or an embedded sound device based on at least a portion of the data or the signal unrelated to the A/V data or transmitting the at least a portion of the data or the signal unrelated to the A/V data to a second external electronic device through a second communication module.

Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. The disclosure relates to operations of a user equipment (UE) and a base station. Specifically, the disclosure relates to a method for transmitting or receiving data or a reference signal in a wireless communication system and an apparatus performing the method.

Abstract: A semiconductor memory device includes a substrate having a memory cell region where a plurality of active regions are defined; a word line having a stack structure of a lower word line layer and an upper word line layer and extending over the plurality of active regions in a first horizontal direction, and a buried insulation layer on the word line; a bit line structure arranged on the plurality of active regions, extending in a second horizontal direction perpendicular to the first horizontal direction, and having a bit line; and a word line contact plug electrically connected to the lower word line layer by penetrating the buried insulation layer and the upper word line layer and having a plug extension in an upper portion of the word line contact plug, the plug extension having a greater horizontal width than a lower portion of the word line contact plug.

Abstract: A semiconductor device includes a substrate having an active region; word line structures in the substrate and extending in parallel to each other in a first horizontal direction; bit line structures on the substrate and the word line structures and extending in parallel to each other in a second horizontal direction that intersects the first horizontal direction; storage node contacts on a side wall of each of the bit line structures and electrically connected to the active region; and a fence structure having first line pattern portions on the word line structures and extending in the first horizontal direction, second line pattern portions extending in the second horizontal direction, and pillar portions extending from the first line pattern portions between the bit line structures in a vertical direction that is perpendicular to an upper surface of the substrate.

Abstract: Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a lower semiconductor chip on a first redistribution substrate and including a through via, a lower molding layer on the first redistribution substrate and surrounding the lower semiconductor chip, a lower post on the first redistribution substrate and laterally spaced apart from the lower semiconductor chip, an upper semiconductor chip on the lower semiconductor chip and coupled to the through via, an upper molding layer on the lower molding layer and surrounding the upper semiconductor chip, an upper post on the lower molding layer and laterally spaced apart from the upper semiconductor chip, and a second redistribution substrate on the upper molding layer and coupled to the upper post. A top surface of the lower molding layer is at a level higher than that of a top surface of the lower semiconductor chip.

Abstract: A catalyst for decomposing perfluorinated compounds includes an alumina carrier, at least one metal carried on the alumina carrier and selected from the group consisting of Zn, Ni, W, Zr, Ti, Ga, Nb, Co, Mo, V, Cr, Mn, Fe, and Cu, S carried on the alumina carrier, and rare-earth metals carried on the alumina carrier.

Abstract: Provided is a display apparatus including a camera, a memory stored with information about an augmented reality (AR) object, a display, and at least one processor connected with the camera. The processor identifies at least one object from an image captured through the camera, identifies a target object from among the at least one object based on information about the AR object, and controls the display to display the AR object based on a position of the target object.