Abstract: There is provided an optical proximity correction (OPC) method capable of minimizing an edge placement error (EPE) of a curvilinear full-chip mask and a mask manufacturing method including the OPC method. The OPC method includes obtaining a curvy neural Jacobian model through artificial neural network (ANN) learning using learning data, obtaining a first baseline curvilinear mask and reducing a number of vertices of the first baseline curvilinear mask to convert the first baseline curvilinear mask into a multigon mask, extracting first geometric features from the multigon mask, calculating a Jacobian between the multigon mask and edge placement error (EPE) by using the curvy neural Jacobian model and the first geometric features, and optimizing the multigon mask by using the Jacobian.

Abstract: Provided is an air dryer. The air dryer includes a first tank, and a heater connected to the first tank. The heater includes a housing extending in a first direction and having an internal space including a first guide region and a second guide region, which are spaced apart from one another in the first direction, a first baffle provided in the first guide region, a second baffle provided in the second guide region, and a first flow guide between the first guide region and the second guide region. Each of the first and second guide regions includes a first region and a second region, a portion of the second region of the first guide region is adjacent to the first region of the second guide region in the first direction, and the first flow guide is adjacent to the second region of the first guide region in the first direction.

Abstract: A semiconductor process system includes a first process chamber configured to perform a first process on a substrate, a second process chamber configured to perform a second process different from the first process, and a gas treatment system configured to treat a first gas exhausted from the first process chamber and a second gas exhausted from the second process chamber, where the gas treatment system includes a catalytic reactor connected to the first process chamber, and configured to treat the first gas exhausted from the first process chamber, a scrubber connected to the catalytic reactor, and configured to treat the first gas and the second gas passing through the catalytic reactor and a combustion apparatus connected to the second process chamber, and configured to burn the second gas exhausted from the second process chamber.

Abstract: A method of generating an autonomous driving trajectory includes generating a scene token and a first trajectory based on a collected image, obtaining a first query command including a first query for a logic of trajectory generation and a second query for safety of the trajectory, and generating a third trajectory based on the scene token, the first trajectory, and the first query command using a large language model (LLM). The third trajectory is obtained by processing a second trajectory based on second information obtained in response to the second query, the second trajectory is obtained based on first information obtained in response to the first query, and the first information and the second information are obtained based on the scene token, the first trajectory, and the first query command.

Abstract: Provided is a method of inspecting semiconductor devices, the method including selecting a type of a target structure and a type of a target defect to be inspected, selecting a filter based on the target structure and the target defect, performing an ultrasonic signal simulation based on the target structure, selecting, based on the ultrasonic signal simulation, a type of a probe configured to generate an ultrasonic signal by applying a vibration to the semiconductor device, setting a frequency of the vibration based on the ultrasonic signal simulation, generating the ultrasonic signal by applying, using the tip, the vibration to the semiconductor device, measuring the ultrasonic signal, processing the measured ultrasonic signal using the selected filter, performing a fitting for each of a signal generated by the ultrasonic signal simulation and the measured ultrasonic signal processed by the selected filter, and determining an accuracy of the fitting.

Abstract: A semiconductor device may include: memory cells disposed three-dimensionally in a vertical direction, a first direction, and a second direction perpendicular to each other; local bit lines disposed at a same level in the vertical direction and connected to the memory cells; and global bit lines disposed at a higher level in the vertical direction than the local bit lines and connected to the local bit lines, wherein the global bit lines include: first global bit lines connected to N first local bit lines among the local bit lines, N may be a natural number equal to or greater than 2; and second global bit lines connected to N second local bit lines among the local bit lines. Each of the memory cells may include: a cell transistor including a cell gate electrode extending in the second direction; and a data storage structure.

Abstract: A storage device includes a first chip and a second chip configured to exchange data with the first chip. The first chip may transmit a data strobe signal and a plurality of data signals, applied with different delay times, to the second chip. The second chip may sample the plurality of data signals, applied with the different delay times, using the data strobe signal received from the first chip during data training.

Abstract: A memory device includes a first cell including a first transistor and a capacitor connected to the first transistor, the capacitor storing a voltage corresponding to data, a second cell including a second transistor, a condition control component configured to apply a stress condition to the second cell, a measuring circuit connected to the second cell configured to measure a current and/or a voltage output from the second cell, and a monitoring circuit connected to the measuring circuit configured to calculate a first threshold voltage of the second transistor before the stress condition is applied, control the condition control component to apply the stress condition to the second cell, calculate a second threshold voltage of the second transistor after the stress condition is applied, and determine a degree of degradation of the second transistor based on a comparison between the first threshold voltage and the second threshold voltage.

Abstract: A management server includes at least one processor including: a monitoring module; and a scheduling module, including the monitoring module is configured to resource information from at least one cluster, and in which the scheduling module is configured to: receive an update request for the at least one cluster, determine an update time point of the at least one cluster based on (i) status information and network performance information included in the resource information and on (ii) a service coverage of a neighboring cluster, and transmit an update specification so as to update network functions of the at least one cluster at the determined update time point.

Abstract: An imaging device includes an image sensor and a lens assembly. The lens assembly includes at least six lenses sequentially aligned along an optical axis from a first lens, to focus or guide light to the image sensor. The at least six lenses include: a first lens farthest from the image sensor and having positive refractive power, a second lens, disposed between the first lens and the image sensor and has negative refractive power, a third lens, disposed between the second lens and the image sensor and has positive refractive power, a fourth lens, disposed between the third lens and the image sensor and has negative refractive power, a fifth lens, disposed between the fourth lens and the image sensor and has positive refractive power, and a sixth lens, disposed between the fifth lens and the image sensor and has negative refractive power.

Abstract: A semiconductor device includes a backside wiring line including a first side and a second side opposite to the first side in a first direction, a lower pattern on the first side of the backside wiring line, the lower pattern including a first side and a second side opposite to the first side in the first direction, where the second side of the lower pattern faces the backside wiring line, a sheet pattern on the first side of the lower pattern, and that is spaced apart from the lower pattern in the first direction, a first source/drain pattern on the lower pattern and connected to the sheet pattern, and an active region insulating pattern contacting the lower pattern, the active region insulating pattern including a line portion and a protruding portion, the line portion of the active region insulating pattern extending along the second side of the lower pattern.

Abstract: A semiconductor device includes a first pattern extending in a first horizontal direction, a second pattern extending in the first horizontal direction, a field insulating layer between the first pattern and the second pattern, a gate electrode that extends in a second horizontal direction on the first pattern, the second pattern and the field insulating layer, a first source/drain region on the first pattern, a second source/drain region on the second pattern, a first source/drain contact on the first source/drain region, an upper interlayer insulating layer on the field insulating layer, a first through via between the first source/drain region and the second source/drain region and connected to the first source/drain contact, a second through via between the first pattern and the second pattern and connected to the first through via, and a third through via on a bottom surface of the second through via.

Abstract: An image sensor according to at least one example embodiment includes a sensor substrate including a photoelectric conversion region; a spacer layer positioned on the sensor substrate; and a color separation lens layer positioned on the spacer layer, wherein the color separation lens layer includes a plurality of nano posts and a dielectric layer positioned between the plurality of nano posts, the nano post includes a first refraction layer and a second refraction layer, the second refraction layer is positioned along the bottom surface and the side surface of the first refraction layer, and the refractive index of the first refraction layer is larger than the refractive index of the second refraction layer.

Abstract: Provided is a light-emitting device including an epitaxial structure that includes first, second, and third light-emitting structures having widths increasing in a vertical direction and each including a p-type semiconductor layer, an active layer, and an n-type semiconductor layer, first, second, and third p-electrodes, at least one of which has a conductive via structure, are on the epitaxial structure and respectively contact the p-type semiconductor layers of the first, second, and third light-emitting structures, an n-common electrode including an n-common portion on the epitaxial structure, and n-electrode portions extending from the n-common portion and respectively contacting side surfaces of the n-type semiconductor layers of the first, second, and third light-emitting structures, and a separation layer separating side surfaces of the p-type semiconductor layers and the active layers of the first, second, and third light-emitting structures from the n-common electrode.

Abstract: A semiconductor device includes a substrate that includes a first surface and a second surface, a first source/drain pattern disposed on the first surface of the substrate, a second source/drain pattern disposed on the first surface of the, a first source/drain contact disposed on the first source/drain pattern and connected to the first source/drain pattern, a second source/drain contact disposed on the second source/drain pattern and connected to the second source/drain pattern, a rear wiring line disposed on the second surface of the substrate, a first contact connection via that connects the rear wiring line with the first source/drain contact, a second contact connection via that connects the rear wiring line with the second source/drain contact and is spaced apart from the first contact connection via, and an air gap structure disposed between the first contact connection via and the second contact connection via.

Abstract: An embodiment of the present disclosure provides a method for predicting a membrane contact process performance of a membrane contact device that removes ammonia contained in wastewater, the method including: inputting the wastewater conditions; inputting membrane contact process conditions of the membrane contact device; and predicting the removal rate of ammonia removed from the wastewater using a prediction model that calculates the removal rate of ammonia, the prediction model including equations using the wastewater conditions and the membrane contact process conditions.

Abstract: A method is provided for recycling silicon from wastewater generated during semiconductor processing. The method includes coagulating silicon particles in the wastewater using a dielectrophoresis device to increase particle size, forming a silicon slurry with a microfiltration device, pressing the slurry to form a silicon cake, and drying the cake in a fluidized bed reactor to obtain silicon powder. The process enables efficient recovery of high-purity silicon using filters with relatively large pores, thereby reducing filter damage from heat generation and improving recovery yield. The recovered silicon powder may be further analyzed, purified of metal impurities, and recycled as a raw material for semiconductor wafers, silicon carbide power devices, or negative electrode materials for rechargeable batteries. This method provides both economic and environmental benefits by securing high-purity silicon materials from otherwise discarded wastewater.

Abstract: A control method for detecting refrigerant leakage occurring in an air conditioner. The air conditioner includes: an outdoor unit including an outdoor heat exchanger, a compressor, an outdoor expansion valve, and a four-way valve; an indoor unit installed indoors and including an indoor heat exchanger and an indoor expansion valve; a liquid pipe that connects the outdoor unit and the indoor unit to each other and through which a liquefied refrigerant flows; a gas pipe that connects the outdoor unit and the indoor unit to each other and through which a gaseous refrigerant flows; a shutoff device including a first shutoff valve for the liquid pipe and a second shutoff valve for the gas pipe; a leakage sensor; and a control unit that controls the operation of the outdoor unit and the indoor unit or controls the opening and closing of the first shutoff valve and the second shutoff valve.

Abstract: An air conditioner includes a heat exchanger. The heat exchanger includes a tube having a flat tube form, and fins respectively provided on an upper surface and a lower surface of the tube. The fins include a plurality of ridges and a plurality of valleys alternately arranged along a longitudinal direction of the tube. A first fin provided on the upper surface of the tube includes a downwardly protruding portion that protrudes from a corresponding one of the plurality of valleys toward the lower surface of the tube and contacts one end of the tube in the flow direction of the fluid. A second fin provided on the lower surface of the tube includes an upwardly protruding portion that protrudes from a corresponding one of the plurality of ridges toward the upper surface of the tube and contacts the one end of the tube.

Abstract: Provided is a coupling device including a substrate including a light source, the substrate extending in a first direction and a second direction, and having a thickness in a third direction, a first coupling unit, and a second coupling unit, wherein the first coupling unit includes an optical bridge spaced apart from the substrate in the third direction, and a first optical element adjacent to the optical bridge in the first direction, wherein the second coupling unit includes a second optical element between the substrate and the optical bridge, and an optical fiber spaced apart from the first optical element in the first direction, and wherein the light source is configured to output light to be sequentially incident on the second optical element, the optical bridge, the first optical element, and the optical fiber.