Abstract: A method of manufacturing a compound semiconductor includes the steps of forming a layered structure of dielectric layers including oxygen or sulfur, and an inter layer formed between the dielectric layers, including rare earth transition metal that is highly reactive to oxygen and sulfur, and heating the layered structure. As a result of the chemical reaction and diffusion of elements, one can change a heated portion of the layered structure to a semiconductor or an insulator, depending on the temperature to which the portion is heated.

Abstract: A recording mark train is formed in an optical recording medium including a noble metal oxide layer by decomposing a noble metal oxide and deforming the noble metal oxide layer. Noble metal particles are irreversibly deposit in the noble metal oxide layer formed with the recording mark train and a laser beam for reproducing data is irradiated onto the thus deposited noble metal particles, thereby reading the recording mark train. The recording mark train includes at least one recording mark having a length shorter than 0.37?/NA wherein ? is the wavelength of the laser beam and NA is an optical system for irradiating the laser beam.

Abstract: A method of manufacturing a compound semiconductor includes the steps of forming a layered structure of dielectric layers including oxygen or sulfur, and an inter layer formed between the dielectric layers, including rare earth transition metal that is highly reactive to oxygen and sulfur, and heating the layered structure. As a result of the chemical reaction and diffusion of elements, one can change a heated portion of the layered structure to a semiconductor or an insulator, depending on the temperature to which the portion is heated.