Abstract: A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/?, wherein ? represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.

Abstract: A method for preparing a light emitting device comprising: disposing an electron-injection layer comprising a metal oxide on a cathode, disposing a first layer adjacent the electron-injection layer, the first layer comprising a small molecule material with a bandgap of at least about 3 eV capable of blocking holes, forming an emissive layer comprising quantum dots capable of emitting blue light upon excitation at a surface of the first layer opposite the electron-injection layer; disposing a second layer comprising a material capable of transporting holes and blocking electrons with a bandgap of at least about 3 eV adjacent a surface of the emissive layer opposite the first layer, and disposing an anode over the second layer. A light-emitting device is also disclosed.

Abstract: A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/?, wherein ? represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.

Abstract: A device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a first electrode and a second electrode, a layer comprising quantum dots disposed between the first electrode and the second electrodes, and a first interfacial layer disposed at the interface between a surface of the layer comprising quantum dots and a first layer in the device. In certain embodiments, a second interfacial layer is optionally further disposed on the surface of the layer comprising quantum dots opposite to the first interfacial layer. In certain embodiments, a device comprises a light-emitting device. Other light emitting devices and methods are disclosed.

Abstract: A method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, fixing the layer comprising quantum dots formed over the substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to small molecules. The layer comprising quantum dots can be preferably fixed in the absence or substantial absence of oxygen. Also disclosed is a method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, exposing the layer comprising quantum dots to small molecules and light flux.

Abstract: A method for preparing semiconductor nanocrystals is disclosed. The method comprises adding a precursor mixture comprising one or more cation precursors, one or more anion precursors, and one or more amines to a ligand mixture including one or more acids, one or more phenol compounds, and a solvent to form a reaction mixture, wherein the molar ratio of (the one or more phenol compounds plus the one or more acids plus the one or more amine compounds) to the one or more cations initially included in the reaction mixture is greater than or equal to about 6, and heating the reaction mixture at a temperature and for a period of time sufficient to produce semiconductor nanocrystals having a predetermined composition. Methods for forming a buffer layer and/or an overcoating layer thereover are also disclosed. Semiconductor nanocrystals and compositions including semiconductor nanocrystals of the invention are also disclosed.

Abstract: A method for preparing semiconductor nanocrystals includes reacting one or more semiconductor nanocrystal precursors in a liquid medium in the presence of a boronic compound at a reaction temperature resulting in semiconductor nanocrystals. Semiconductor nanocrystals are also disclosed.

Abstract: A method for preparing semiconductor nanocrystals comprises reacting cation precursors and anion precursors in a reaction mixture including one or more acids, one or more phenol compounds, and a solvent to produce semiconductor nanocrystals having a predetermined composition. A method for forming a coating on at least a portion of a population of semiconductor nanocrystals is also disclosed. The method comprises forming a first mixture including a population of semiconductor nanocrystals, one or more amine compounds, and a first solvent; adding cation precursors and anion precursors to the first mixture at a temperature sufficient for growing a semiconductor material on at least a portion of an outer surface of at least a portion of the population of semiconductor nanocrystals; and initiating addition of one or more acids to the first mixture after addition of the cation and anion precursors is initiated. Semiconductor nanocrystals and populations thereof are also disclosed.

Abstract: Systems and methods for retrieving, storing and distributing multimedia content in a cloud computing environment. The multimedia content may be divided into a plurality of segments using a multimedia content receiving device. The method of retrieving, storing and distributing multimedia content may include receiving a first segment of a plurality segments of the multimedia content from a first multimedia content receiving device coupled to a communication network and receiving a second segment of the plurality of segments of the multimedia content from a second multimedia content receiving device coupled to a communication network. The method may further include storing the first and the second segments on a network storage device. The systems and methods permit users to upload multimedia content, store it in the cloud, and watch it back on a variety of different multimedia devices.