Abstract: An acoustic wave device includes a support substrate, a medium layer formed on the support substrate, a piezoelectric substrate formed on the medium layer, and a resonator including IDT electrodes formed on the piezoelectric substrate. The medium layer includes stripe-shaped first acoustic impedance regions having a longitudinal direction and a lateral direction, and stripe-shaped second acoustic impedance regions having a longitudinal direction and a lateral direction and an acoustic impedance different from that of the first acoustic impedance regions, which are alternately arranged with the first acoustic impedance region.

Abstract: An acoustic wave device includes a piezoelectric substrate, a support substrate bonded on the piezoelectric substrate, and a resonator formed on the other side of the support substrate on the piezoelectric substrate generates main-mode wave and transverse-mode wave when power is applied. The resonator includes a first bus bar, a second bus bar opposed to the first bus bar, a plurality of first electrode fingers connected to the side of the second bus bar in the first bus bar, a plurality of second electrode fingers connected to the side of the first bus bar in the second bus bar, a plurality of first dummy electrodes connected to the side of the second bus bar in the first bus bar, and a plurality of second dummy electrodes connected to the side of the first bus bar in the second bus bar.

Abstract: An acoustic wave device includes a device chip, a first metal pattern formed on one surface of the device chip and including a pattern configured to form a resonator, a second metal pattern formed on the one surface of the device chip so as to have a predetermined thickness larger than the first metal pattern at any position and including a pattern including a signal input/output terminal, a wiring connecting the signal input/output terminal and the resonator, a wiring connecting a plurality of resonators and a ground wiring, a first roof portion made of resin formed on the second metal pattern, a metal layer within the roof formed on the first roof portion, a second roof portion made of resin formed on the first roof portion, two or more heat dissipation solder bumps formed by a heat dissipation passage hole passing through the second roof portion.

Abstract: An acoustic wave device includes a band pass filter having a plurality of series resonators and a plurality of parallel resonators. The plurality of series resonators include a first series resonator and a second series resonator. The first series resonator has a first attenuation pole and a second attenuation pole having an attenuation amount that is less than or equal to half of that of the first attenuation pole. The second series resonator includes a third attenuation pole and a fourth attenuation pole. The third attenuation pole and the fourth attenuation pole has an attenuation amount less than that of the first attenuation pole and greater than that of the second attenuation pole.

Abstract: An acoustic wave device includes a substrate, a transmission filter formed on the substrate, a reception filter formed on the substrate, a transmission ground pad of the transmission filter, the transmission ground pad is formed on the substrate, and a reception ground pad of the reception filter, the reception ground pad is formed on the substrate. The transmission filter includes a plurality of series resonators and a plurality of parallel resonators. The plurality of parallel resonators includes a first parallel resonator electrically connected to the reception ground pad.

Abstract: An acoustic wave device includes a first filter, a second filter, a ground terminal, a common terminal connected to an output side of the first filter and an input side of the second filter, a first filter terminal connected to an input side of the first filter, a second filter terminal connected to an output side of the second filter, a ground electrode connected to a metal body for ground that includes the ground terminal or a wiring connected to the ground terminal, an input side ultrasonic delay electrode connected to an input side metal body arranged in parallel with the ground electrode on one side of the ground electrode, an output side ultrasonic delay electrode connected to an output side metal body arranged in parallel with the ground electrode on another side of the ground electrode.

Abstract: An acoustic wave device includes a support substrate, a medium layer formed on the support substrate, a piezoelectric substrate formed on the medium layer, and a resonator formed on the piezoelectric substrate. The medium layer includes a first acoustic velocity region and second acoustic velocity regions penetrating at least one half of the thickness of the medium layer. The second acoustic velocity region has an acoustic velocity different from that of the first acoustic velocity region.

Abstract: An acoustic wave device includes a support substrate, a medium layer formed on the support substrate, a piezoelectric substrate formed on the medium layer, and a resonator formed on the piezoelectric substrate. The medium layer includes a first acoustic impedance region and second acoustic impedance regions having an acoustic impedance different from the first acoustic impedance region in a top view. The second acoustic impedance regions include a plurality of regions formed in a top view, and the second acoustic impedance regions are formed in three or more regions in where the resonator is formed; and a method for producing the same.

Abstract: An acoustic wave device includes a high acoustic velocity substrate, a medium acoustic velocity layer formed on the main surface of the high acoustic velocity substrate, and a piezoelectric substrate formed directly or via another layer on the main surface of the medium acoustic velocity layer, wherein an acoustic velocity is slowed down gradually from the main surface of the high acoustic velocity substrate toward the main surface of the medium acoustic velocity layer between the high acoustic velocity substrate and the medium acoustic velocity layer; and a method for producing the same.

Abstract: An example semiconductor device includes a drain layer formed of a first conductivity semiconductor, a drift layer formed of the first conductivity semiconductor and on the drain layer, and a plurality of trench stripes having longitudinal directions and lateral directions formed of a second conductivity semiconductor and formed on the drift layer, wherein the longitudinal directions of the plurality of trench stripes disposed toward at least two directions.

Abstract: A ladder-type filter includes a plurality of series arms and a plurality of parallel arms, in which one of the parallel arms does not have resonance characteristic is arranged in parallel between two series arm resonators of the plurality of series arms. The ladder-type filter may be included in a duplexer and/or a module.

Abstract: A bandpass filter circuit includes a fourth element that is a capacitor having one end connected to a first node, a fifth element that is a capacitor having one end connected to a second node, a sixth element that is a capacitor connected between other end of the fourth element and other end of the fifth element, a seventh element that is an inductor having one end connected to a fourth node to which the fourth element and the sixth element are connected, other end of the seventh element is connected to a ground terminal, and an eighth element that is an inductor having one end connected to a fifth node to which the fifth element and the sixth element are connected, other end of the eighth element is connected to the ground terminal.

Abstract: A multilayer film substrate includes a piezoelectric substrate, a first insulating film formed on the piezoelectric substrate, a support substrate, a second insulating film formed on the support substrate, and a bonding layer formed between the first insulating film and the second insulating film. The piezoelectric substrate and the support substrate are bonded each other using the first insulating film, the second insulating film, and the bonding layer as an interlayer.

Abstract: An example acoustic wave device includes a wiring substrate, a device chip flip-chip bonded on the wiring substrate via a plurality of bumps, a metal pattern formed on an outer edge portion of the wiring substrate, the metal pattern includes an uneven portion or a jagged portion, a plurality of bump pads formed on the wiring substrate comprises an antenna pad, a transmitting pad, a receiving pad and a ground pad, a sealing resin member bonded to both the metal pattern and the wiring substrate, the sealing resin member hermetically seals the device chip, a region which is a tip direction of the uneven portion or the jagged portion formed to orient toward the outer edge of the wiring substrate, a region which is the tip direction of the uneven portion or the jagged portion formed to orient toward a center of the wiring substrate, and a surface acoustic wave resonator formed on the device chip and disposed in the vicinity of the first region or the second region.

Abstract: A ladder-type filter includes a plurality of series arms and a plurality of parallel arms, in which one of the parallel arms does not have resonance characteristic is arranged in parallel between two series arm resonators of the plurality of series arms. The ladder-type filter may be included in a duplexer and/or a module.

Abstract: An acoustic wave device includes a wiring substrate, a wiring substrate-side wiring formed on the wiring board, a chip substrate opposed to the wiring substrate, a chip substrate-side wiring formed on the chip substrate, a plurality of resonators formed on the chip substrate and electrically connected to the chip substrate-side wiring, a plurality of bumps electrically connected to the wiring substrate-side wiring and the chip substrate-side wiring, and a heat dissipation bump bonded to a region of the chip board-side wiring electrically connected to a plurality of resonators and insulated from the wiring substrate-side wiring.

Abstract: An acoustic wave device includes a resonator formed on one surface of a device chip; a support layer formed so as to surround the resonator on the one surface; a cover layer formed on the support layer and cooperating with the device chip and the support layer to form a cavity for hermetically sealing the resonator; and the cover layer on the one cavity is curved so that a forming side of the resonator is a curved inner side.

Abstract: A semiconductor substrate includes a silicon carbide substrate, a first nitride film in contact with the upper surface of the silicon carbide substrate, a second nitride film in contact with an upper surface of the first nitride film, and a silicon oxide film in contact with the upper surface of the second nitride film. The first nitride layer is more nitrogen-rich than the second nitride layer.

Abstract: An acoustic wave device includes: a wiring substrate; a device chip mounted on the wiring substrate; a photocurable resin film disposed so as to surround an air gap between the wiring substrate and the device chip; a ceramics layer formed so as to cover the photocurable resin film; and a sealing portion covering the ceramics layer.

Abstract: An elastic wave device includes a wiring board, a device chip having a resonator, and a wiring pattern electrically connected to the resonator, the device chip is electrically connected to the wiring board, and a sealing portion that seals the device chip. The wiring pattern includes a first wiring layer and a second wiring layer. The second wiring layer includes a lower metal layer in contact with an upper surface of the first wiring layer, a partition layer which is a metal layer in contact with an upper surface of the lower metal layer, and an upper metal layer in contact with an upper surface of the partition layer. The partition layer is a metal having a lower electrical conductivity than the lower metal layer and the upper metal layer.