Patents Assigned to Sanan Japan Technology Corporation
-
Publication number: 20240171150Abstract: An example acoustic wave device includes a wiring substrate, a device chip flip-chip bonded on the wiring substrate via a plurality of bumps, a metal pattern formed on an outer edge portion of the wiring substrate, the metal pattern includes an uneven portion or a jagged portion, a plurality of bump pads formed on the wiring substrate comprises an antenna pad, a transmitting pad, a receiving pad and a ground pad, a sealing resin member bonded to both the metal pattern and the wiring substrate, the sealing resin member hermetically seals the device chip, a region which is a tip direction of the uneven portion or the jagged portion formed to orient toward the outer edge of the wiring substrate, a region which is the tip direction of the uneven portion or the jagged portion formed to orient toward a center of the wiring substrate, and a surface acoustic wave resonator formed on the device chip and disposed in the vicinity of the first region or the second region.Type: ApplicationFiled: November 17, 2023Publication date: May 23, 2024Applicant: Sanan Japan Technology CorporationInventors: Kanehisa Kimbara, Shinichi Shioi
-
Publication number: 20240137007Abstract: A ladder-type filter includes a plurality of series arms and a plurality of parallel arms, in which one of the parallel arms does not have resonance characteristic is arranged in parallel between two series arm resonators of the plurality of series arms. The ladder-type filter may be included in a duplexer and/or a module.Type: ApplicationFiled: October 18, 2023Publication date: April 25, 2024Applicant: Sanan Japan Technology CorporationInventors: Hitoshi Ebihara, Shinichi Shioi
-
Publication number: 20240088866Abstract: An acoustic wave device includes a wiring substrate, a wiring substrate-side wiring formed on the wiring board, a chip substrate opposed to the wiring substrate, a chip substrate-side wiring formed on the chip substrate, a plurality of resonators formed on the chip substrate and electrically connected to the chip substrate-side wiring, a plurality of bumps electrically connected to the wiring substrate-side wiring and the chip substrate-side wiring, and a heat dissipation bump bonded to a region of the chip board-side wiring electrically connected to a plurality of resonators and insulated from the wiring substrate-side wiring.Type: ApplicationFiled: September 5, 2023Publication date: March 14, 2024Applicant: Sanan Japan Technology CorporationInventors: Yuki Koto, Shinichi Shioi
-
Publication number: 20240048119Abstract: An acoustic wave device includes a resonator formed on one surface of a device chip; a support layer formed so as to surround the resonator on the one surface; a cover layer formed on the support layer and cooperating with the device chip and the support layer to form a cavity for hermetically sealing the resonator; and the cover layer on the one cavity is curved so that a forming side of the resonator is a curved inner side.Type: ApplicationFiled: August 7, 2023Publication date: February 8, 2024Applicant: Sanan Japan Technology CorporationInventors: Yutaka Kadogawa, Hirofumi Nakamura, Koichi Kumagai
-
Publication number: 20230246078Abstract: A semiconductor substrate includes a silicon carbide substrate, a first nitride film in contact with the upper surface of the silicon carbide substrate, a second nitride film in contact with an upper surface of the first nitride film, and a silicon oxide film in contact with the upper surface of the second nitride film. The first nitride layer is more nitrogen-rich than the second nitride layer.Type: ApplicationFiled: January 30, 2023Publication date: August 3, 2023Applicant: Sanan Japan Technology CorporationInventors: Hiroshi Nakamura, Shinichi Shioi
-
Publication number: 20230223911Abstract: An acoustic wave device includes: a wiring substrate; a device chip mounted on the wiring substrate; a photocurable resin film disposed so as to surround an air gap between the wiring substrate and the device chip; a ceramics layer formed so as to cover the photocurable resin film; and a sealing portion covering the ceramics layer.Type: ApplicationFiled: January 10, 2023Publication date: July 13, 2023Applicant: Sanan Japan Technology CorporationInventors: Kanehisa Kimbara, Shinichi Shioi
-
Publication number: 20230101605Abstract: An elastic wave device includes a wiring board, a device chip having a resonator, and a wiring pattern electrically connected to the resonator, the device chip is electrically connected to the wiring board, and a sealing portion that seals the device chip. The wiring pattern includes a first wiring layer and a second wiring layer. The second wiring layer includes a lower metal layer in contact with an upper surface of the first wiring layer, a partition layer which is a metal layer in contact with an upper surface of the lower metal layer, and an upper metal layer in contact with an upper surface of the partition layer. The partition layer is a metal having a lower electrical conductivity than the lower metal layer and the upper metal layer.Type: ApplicationFiled: September 20, 2022Publication date: March 30, 2023Applicant: Sanan Japan Technology CorporationInventor: Eiji Kuwahara
-
Publication number: 20230059423Abstract: A module includes a package substrate, an elastic wave device mounted on the package substrate, the elastic wave device includes a first main surface having a functional element, the first main surface faces the package substrate, a semiconductor device mounted on the package substrate, and a resin made from a single material, the resin covers the elastic wave device while leaving an air gap between the package substrate and the functional element, and the resin covers the semiconductor device while filling a space between the package substrate and the semiconductor device.Type: ApplicationFiled: August 18, 2022Publication date: February 23, 2023Applicant: Sanan Japan Technology CorporationInventors: Hirofumi Nakamura, Koichi Kumagai, Yutaka Kadogawa, Kanehisa Kimbara
-
Publication number: 20230047266Abstract: A duplexer includes a piezoelectric substrate, a receiving filter formed on the piezoelectric substrate, the receiving filter includes a plurality of resonators, and a transmitting filter formed on the piezoelectric substrate, the transmitting filter includes a plurality of resonators. One of the resonators of the receiving filter is a multi-mode type acoustic wave resonator having a capacitance that is two times or more the average capacitance of the other resonators formed on the piezoelectric substrate.Type: ApplicationFiled: August 3, 2022Publication date: February 16, 2023Applicant: Sanan Japan Technology CorporationInventor: Yuki Koto
-
Publication number: 20220416748Abstract: A bandpass filter circuit includes a fourth element that is a capacitor having one end connected to a first node, a fifth element that is a capacitor having one end connected to a second node, a sixth element that is a capacitor connected between other end of the fourth element and other end of the fifth element, a seventh element that is an inductor having one end connected to a fourth node to which the fourth element and the sixth element are connected, other end of the seventh element is connected to a ground terminal, and an eighth element that is an inductor having one end connected to a fifth node to which the fifth element and the sixth element are connected, other end of the eighth element is connected to the ground terminal.Type: ApplicationFiled: May 17, 2022Publication date: December 29, 2022Applicant: Sanan Japan Technology CorporationInventor: Hiroshi Nakamura