Abstract: A continuity test circuit for a boundary pad includes a pull-up transistor electrically connected between the boundary pad and a first power supply, and a pull-down transistor electrically connected between the boundary pad and a first reference ground potential. A normal output conductor is electrically connected to have a same electrical state as the boundary pad during normal operation. A continuity test output conductor is electrically connected to have a same electrical state as the boundary pad during continuity test operation. Continuity testing control circuitry is defined to control the pull-up transistor, the pull-down transistor, and the normal output conductor during continuity test operation such that an electrical state present on the continuity test output conductor indicates a status of electrical continuity between the boundary pad and either a second power supply or a second reference ground potential to which the boundary pad should be electrically connected.

Abstract: A host power-on reset control circuit includes a comparator connected to receive both a divided version of a supply voltage and a reference voltage. The comparator generates and outputs a high digital state signal when the divided version of the supply voltage is at least as large as the reference voltage. The control circuit includes an output node connected to transmit a power-on reset control signal. The control circuit includes pulldown circuitry connected between the comparator output and the output node. The pulldown circuitry maintains the output node at a reset voltage level as the supply voltage rises to a host operational level, based on a signal present at the comparator output. The control circuit includes pullup circuitry connected between the supply voltage and the output node. The pullup circuitry maintains the output node at a non-reset voltage level after the supply voltage has risen to the host operational level.

Abstract: A memory system includes a status circuit having a common status node electrically connected to a respective status pad of each of a plurality of memory chips. The memory system also includes a plurality of resistors disposed within the status circuit to define a voltage divider network for generating different voltage levels at the common status node. Each of the different voltage levels indicates a particular operational state combination of the plurality of memory chips. Also, each of the plurality of memory chips is either in a first operational state or a second operational state. Additionally, the different voltage levels are distributed within a voltage range extending from a power supply voltage level to a reference ground voltage level.

Abstract: Methods and devices of the invention include an electrostatic discharge (ESD) protection circuit. This circuit includes rise time dependent activation circuitry capable of detecting a slew rate of an input signal and capable of determining whether the slew rate of the input signal is greater than a threshold value. For an ESD event said activation circuitry generates a trigger signal. Additionally, the activation circuitry is coupled with the ESD dissipation duration control circuitry which is further coupled with an ESD dissipation circuit. This arrangement enabling the duration control circuit to be activated by the trigger signal which responds by producing an activation signal that activates the ESD dissipation circuitry and that controls the length of time the dissipation circuit remains active. The ESD dissipation circuitry includes a shunt that redirects the ESD energy away from the protected internal circuit.

Abstract: Methods and systems for reconfiguring data memory of an embedded controller managed flash memory device are disclosed. According to one method, using a controller managed flash memory device reconfiguration module configured to execute on a general purpose computing platform separate from a computing platform in which an embedded controller managed flash memory device is located, reconfiguration data to be written to a data memory of the embedded controller managed flash memory device is received from a user and I/O commands for writing the reconfiguration data to an external device are generated. Flash device commands corresponding to the I/O commands are generated. The reconfiguration data is communicated to the data memory of the embedded controller managed flash memory device by sending the flash device commands and the reconfiguration data over a flash device interface of the embedded controller managed flash memory device.